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Quantum mechanical correction on capacitance-voltage characteristics of narrow gap semiconductors (1991)

Yang, M. J. ; Yang, C. H.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 2208-2210

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We show that for narrow band-gap semiconductors, the doping concentration deduced from capacitance-voltage measurements can be substantially underestimated due to surface quantization effect. While our derivation can be applied to all materials, detailed accounts on p-type Hg0.788Cd0.212Te are given as an example. We found that for a practical doping range, 1×1015 cm−3 to 1×1017 cm−3, the doping level can be underestimated by 53% to 173%, respectively.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349460

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