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Radiative and nonradiative transitions in GaAs:Er (1993)

Fang, Xiao M. ; Li, Yabo ; Langer, Dietrich W.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 6990-6992

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Erbium doped GaAs was grown by metal-organic chemical vapor deposition using a novel liquid precursor: tris(n-butylcyclopentadienyl)erbium [Er(C4H9C5H4)3]. The morphology was excellent at growth temperatures near 620 °C. Based on a simple model for the excitation dependence of the emission, the nonradiative Auger-type process was estimated to be nearly five times that of the energy transfer process from bound excitons to the Er3+ ions that subsequently resulted in the Er-related light emission. Temperature induced quenching of the emission was found to be dominated by transitions with an activation energy of 74 meV.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.355052

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