ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The metastability of the electronic properties of hydrogenated amorphous silicon (a-Si:H) films deposited at high rates by the rf glow discharge decomposition of mixtures containing 40% silane in helium is compared with that of device quality a-Si:H material deposited at 250 °C under standard low deposition rate conditions. The density of states above the Fermi level of the films obtained under helium dilution decreases for deposition temperatures increasing from 250 to 350 °C, both after annealing and after light soaking. At 350 °C, the density of states becomes comparable in both states to that of device quality low deposition rate a-Si:H. We observe a correlation between these results and the degradation of the photoconductivity and the below-Fermi-level defect density measured in situ during light soaking. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360678
