ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Optical characterization of GaN films by photoreflectance and photocurrent measurement (1995)

Qin, L. H. ; Zheng, Y. D. ; Feng, D. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 7424-7426

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the room temperature optical characterization of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined to be 3.400 eV by photoreflectance and the possible origin of the photoreflectance signal is discussed. Photocurrent measurement exhibited a peak at 3.351 eV and a continued photoresponse through the ultraviolet region. We found that the intensity of photocurrent was dependent upon the chopper frequency in the measurement. Absorption coefficient and film thickness were obtained from the optical transmission spectra. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360400

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit