Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 1287-1290
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The polarization properties of valence intersubband transitions in p-type doped Si0.75Ge0.25/Si multiple quantum wells are investigated using Fourier infrared absorption spectra. It is found that TE and TM polarized light beams both can excite valence intersubband transitions in SiGe/Si multiple quantum wells. Meanwhile, a strong dichroism is also observed for HH1→HH2 transitions because the splitting peaks between TE and TM absorption have different activity under s- and p-polarized states. However, the strong mixing of light- and heavy-hole states in split-off state SO1 weakens the dichroism of HH1→SO1 transitions. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362927
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