Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 3376-3380
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Bistable current–voltage characteristics caused by competition of tunneling through and field-enhanced thermionic emission across a single barrier are investigated in an n−-GaAs/Al0.34Ga0.66As/n+-GaAs structure. The S-shaped part of the characteristic persists in the whole temperature regime between 4.2 and 300 K in accordance with theoretical predictions. The delay and switching times of the transition from the low- to the high-conducting state are investigated as a function of the applied voltage and compared with simulations. The observed timescales are much longer than expected from theory, which indicates the presence of additional deep centers or interface states. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363251
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