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Degradation of commercial high-brightness GaP:N green light emitting diodes (1998)

Zdánský, K. ; Zavadil, J. ; Nohavica, D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 7678-7684

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Deep level transient spectra, electroluminescence spectra, and light output versus current were measured on diodes degraded by a current stress. It has been shown that the drop in electroluminescence efficiency can be related to a new deep level formed by recombination enhanced reaction from the electron trap attributed to the nitrogen pair in the phosphorus site with silicon in the nearest gallium site. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.367889

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