Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 2923-2925
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A simple model is presented to discuss the effect of As precipitates on the Fermi level in GaAs grown by molecular-beam epitaxy at low temperature (LT-GaAs). This model implements the compensation between point defects and the depletion of arsenic precipitates. The condition that the Fermi level is pinned by As precipitates is attained. The shifts of the Fermi level in LT-GaAs with annealing temperature are explained by our model. Additionally, the role of As precipitates in conventional semi-insulating GaAs is discussed. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372278
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