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Ionization-enhanced solid phase epitaxy of amorphous silicon with boron impurities (1988)

Park, Won Woo ; Becker, M. F. ; Walser, R. M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 52 (1988), S. 1517-1519

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have made the first high-resolution, laser interferometric measurements of the functional dependence of the velocity of (100) silicon solid phase epitaxy on the concentration of implanted boron impurities NB. At all measurement temperatures (450–550 °C), and for all NB〈5×1019 cm−3 the fractional increase in the velocity was identically equal to the dimensionless ratio NB/Ni, where Ni is a thermally activated factor. This result disagrees with the predictions of all models for the effect of impurities on solid phase epitaxial growth.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.99117

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