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Evidence of arsenic-induced surface defects in high-dose As+-implanted rapidly annealed silicon (1988)

Kumar, S. N. ; Chaussemy, G. ; Canut, B. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 2167-2169

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Examination of Auger transition structures of As and x-ray photoelectron spectra of Si indicates a strong influence of the As ion implantation stage on the surface characteristics of (100) silicon. Rapid thermal annealing resulted in the electrical activation of a major portion of arsenic in the implanted zone, but a shallow region confined within a depth of ≈200 A(ring) from the surface contained As complexed with Si and O atoms. Surface characterization results agree with the observed degradation in transport properties of solar cells constructed on the As+ implanted and rapidly annealed (100) p-silicon substrates.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.100414

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