Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 325-327
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality TiN layers were deposited in an electron-cyclotron-resonance (ECR) plasma process at substrate temperatures between 350 and 600 °C. Tetrakis(dimethylamido)-titanium [Ti(NMe2)4] was used as precursor and introduced into the downstream region of an ECR nitrogen plasma. The electrical properties of the gold-colored TiN layers (45–100 μΩ cm) depend on the deposition rate, the substrate temperature, the microwave (MW) power, and the plasma gas composition. TiN with a resistivity of 45 μΩ cm could be obtained at a substrate temperature of 600 °C and a MW power of 400 W. The measured resistivities are so far the best reported values obtained by using a metalorganic precursor for TiN deposition. The deposits were characterized by resistivity measurements and electron probe microanalysis for chemical analysis. The morphology and step coverage was checked by atomic force and scanning electron microscopy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110059
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