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Nitrogen doping in AlGaP grown by metalorganic vapor phase epitaxy using ammonia (1993)

Adomi, K. ; Noto, N. ; Nakamura, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 663-665

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Doping characteristics of nitrogen in AlGaP grown by metalorganic vapor phase epitaxy have been investigated using ammonia as the nitrogen source. It was found that nitrogen could be successfully incorporated into AlGaP up to as much as 1×1020/cm3 assisted by the gas phase parasitic reaction between trimethylaluminum and ammonia, while nitrogen incorporation into GaP was difficult. Nitrogen incorporation was found to be dependent on several factors such as ammonia concentration, Al composition, V/III ratio, and growth temperature. Exciton recombination bound to isoelectronic nitrogen in AlGaP was observed for the first time by photoluminescence measurement.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109950

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