Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 1386-1388
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide diodes to demonstrate rectification to reverse voltages in excess of 2000 V at room temperature. The mesa structured 6H-SiC p+n junction diodes were fabricated in 6H-SiC epilayers grown by atmospheric pressure chemical vapor deposition on commercially available 6H-SiC wafers. The devices were characterized while immersed in FluorinertTM to prevent arcing which occurs when air breaks down under high electric fields. The simple nonoptimized diodes, whose device areas ranged from 7×10−6 to 4×10−4 cm2, exhibited a 2000 V functional device yield in excess of 50%.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111915
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