Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 2730-2732
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The D-center in 6H-SiC is a boron-related deep hole trap observed previously in LPE-grown 6H-SiC diodes. We report deep level transient spectroscopy (DLTS) measurements in which the D-center signature is observed in high-purity n- and p-type epitaxial layers formed by chemical vapor deposition (CVD). An activation energy of 0.58 eV and a capture cross section between 1×10−14 cm2 and 3×10−14 cm2 was determined for this level. Even though the D-center in these diodes is thought to arise from unintended trace contamination, we observed within the same diode a factor of twenty greater density of this level in the n-type layer than in the p-type layer, which is explained by a recently proposed site competition model for impurity doping during 6H-SiC CVD growth.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111457
|
Location |
Call Number |
Expected |
Availability |
