Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 3623-3625
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ta-Si films with different composition ratio were prepared by the pulsed laser deposition technique on a Si3N4/Si(100) substrate at room temperature. Cross-sectional transmission electron spectroscopy (TEM) and Auger electron spectroscopy in combination with Rutherford backscattering spectroscopy were employed to investigate the deposited structures. As-deposited films were found to be spontaneously modulated with composition along the growth direction, the period of the structure depending upon Si/Ta average composition ratio, and is about 50 A(ring) in thickness. Auger electron spectroscopy analysis confirms the codeposited Ta-Si layers reveal an oscillating character of the chemical bonding. The contrast analysis of cross-sectional TEM images and the study of electron-diffraction patterns identify amorphous state (up to the resolution of analytical technique) of the deposited layers. The observed effect is attributed to the nature of the depositing flux.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111224
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