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Spatial distribution of the luminescence in GaN thin films (1996)

Ponce, F. A. ; Bour, D. P. ; Götz, W. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 57-59

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The spatial dependence of the luminescence intensities at the band edge (364 nm) and at the "yellow'' defect-band (centered at 560 nm) regions for epitaxial GaN films have been studied using cathodoluminescence microscopy at room temperature. The films were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates and were not intentionally doped. Significant nonuniformities in the band-to-band and in the yellow band emissions were observed. Yellow luminescence in small crystallites appears to originate from extended defects inside the grains and at low-angle grain boundaries. The size of band-to-band emission sites correlates with low-angle grain sizes observed by transmission electron microscopy. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.116756

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