Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 2973-2975
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report optical characteristics of linear graded InxGa1−xAs (XIn=0–0.58) buffer layers grown on GaAs by low-pressure metalorganic chemical vapor deposition. Two types of wirelike surface structures were observed from the layers grown at two different temperatures. Low-temperature photoluminescence (PL) and double-crystal x-ray diffractometric measurements indicate that the PL energy and the relaxation of the graded layers were strongly dependent on the top surface structure. InGaAs cap layers were grown on top of the graded buffer layers with a variation of indium composition. A strong PL signal was observed from the top region of the graded layer grown with a lattice-matched cap layer. It suggests that the top region of the grade, similar to a graded well structure, is compressively strained but is of high structural quality without dislocations. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116373
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