ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The observation of intervalence subband transitions induced third-order nonlinear effect in Si1−xGex/Si multiple quantum wells was reported. The dc Kerr in a symmetric quantum well, in which the linear-electro-optic effect is absent, was measured. The spectra of the absorption coefficient changes Δα under external field was obtained using experimental Fourier transform infrared absorption data. The resulting changes of refractive index due to quantum-confined Stark effect was obtained by Kramers–Kronig relations based on measured absorption data. Moreover, under both 45° incident angle and normal incidence, TE-active transition was excited and corresponding changes of refractive index under dc field was observed. The measured large changes of refractive index make Si1−xGex/Si multiple quantum wells quite attractive for potential application in electro-optic devices such as modulators and switches. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116816
