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In situ infrared transmission spectroscopy of nucleation and growth of amorphous hydrogenated silicon (1996)

Knobloch, Jürgen ; Hess, Peter

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 4041-4043

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present a series of IR transmission spectra with submonolayer resolution of the initial growth of amorphous hydrogenated silicon (a-Si:H) deposited by F2 laser (157 nm) chemical vapor deposition. The film thickness was measured simultaneously using a quartz crystal microbalance with appropriate sensitivity. The presented technique allows the evolution of the H content and bonding configuration on a silicon substrate to be monitored during nucleation and growth. It provides a comparable or even higher sensitivity than that achieved by reflection absorption spectroscopy using metal surfaces or methods applying multilayer "optical cavity'' structures to enhance the IR absorption. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117864

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