Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 946-948
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The nucleation and growth conditions of c-BN films were studied in low-pressure inductively coupled plasma enhanced chemical-vapor deposition. The threshold sheath potentials needed for the nucleation and the growth of c-BN were sustained by two step Vsheath deposition. The threshold sheath potential for the growth Vsheathg was found to be significantly lower than the threshold value required for nucleation Vsheathn. Under our experimental condition, the values of Vsheathg and Vsheathn were found to be 45 and 65 V. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118449
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