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Direct writing of conductive aluminum line on aluminum nitride ceramics by transversely excited atmospheric CO2 laser (1997)

Yabe, Hiroyuki ; Takahashi, Akihisa ; Sumiyoshi, Tetsumi ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 2758-2760

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The fabrication of very low resistance aluminum conductor line on the aluminum nitride (AlN) by transversely excited atmospheric (TEA) CO2 laser writing was demonstrated. A minimum electrical resistance was measured to be less than 0.1 Ω/mm with a linewidth of 500 μm. The electrical resistance measured is lower than those of conventional conductor lines used for electronic circuits. The x-ray photoelectron spectroscopy depth profile analysis of aluminum layers can explain the resistance of the metallic aluminum layer formed. Compared to the experimental data by KrF laser, TEA CO2 laser writing is found to be a more effective process for fabricating a low resistance conductor line on AlN than the KrF excimer laser. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120125

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