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Retention characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition (1998)

Zhang, Z. G. ; Wang, Y. N. ; Zhu, J. S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 3674-3676

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electric measurements demonstrate that the polarization decay increases with increasing the write/read voltage within the first second. This could be attributed to the depolarization fields, which increases with increasing the retained polarization. However, we found that the polarization loss is insignificant with different write/read voltages over a range of 1–30 000 S. Furthermore, experiment indicates that there is weak pinning of domain walls existing in SBT, which plays an important role for SBT thin film over a range of 1–30 000 S with a low write/read voltage. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122859

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