Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 3344-3346
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The band gap of AlxGa1−xN is measured for the composition range 0≤x〈0.45; the resulting bowing parameter, b=+0.69 eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the AlxGa1−xN: directly nucleated or buffered growths of AlxGa1−xN initiated on sapphire at temperatures T〉800 °C usually lead to stronger apparent bowing (b〉+1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b〈+1.3 eV). Extant data suggest that the intrinsic band-gap bowing parameter for AlGaN alloys is b=+0.62(±0.45) eV. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123339
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