Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 4139-4141
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Self-assembled growth in combination with prepatterning yields ordered lines of Ge islands on a planar Si (001) surface. The self-assembled Ge nanostructures are grown on top of a 15-period Si/SiGe superlattice, which is deposited on a prepatterned Si substrate. The pattern consists of 10 nm deep trenches with a period of 250 nm. The superlattice translates the surface modulation of the substrate into a strain-field modulation at the growth front of the superlattice. This strain field modulation provides the template for the ordered nucleation of self-assembled Ge islands. Our method gives rise to the long-range ordering of perfectly passivated nanostructures and can in principle be applied to any other strained material system. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1326842
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