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A formation mechanism of carbon nanotube films on SiC(0001) (2000)

Kusunoki, M. ; Suzuki, T. ; Hirayama, T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 531-533

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report a remarkable difference of decomposed structures on the Si(0001) and C(0001¯) faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 °C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.127034

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