Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
81 (2002), S. 111-113
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The capacitance-voltage (C–V) behavior of the metal/Bi2Ti2O7/n-Si metal–oxide–semiconductor (MOS) structure has been studied. The analyses of C–V curves show that a high builtin voltage of 11 V on Si can be achieved by bias-temperature (BT) process. The hysteresis loops in C–V curves of the MOS structure were also observed clearly. From the dependence of C–V properties on different BT processes, it is deduced that the hysteresis loops are dominated by the mobile negative charges in the oxide. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1490628
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