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High rate primary ion beam deposition of a-Si:H films (1988)

Frey, H.

Springer

Applied physics 47 (1988), S. 193-197

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ISSN: 1432-0630

Keywords: 68.55 ; 72.40 ; 81.15

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Hydrogenated amorphous silicon films have been prepared by primary ion beam deposition with a new electrodeless rf ion source. The design of the ion source is described. The composition of the a-Si:H films has been determined by Rutherford backscattering, and the photoconductivity by the constant photocurrent method (CPM). The best a-Si:H films show photoconductivities of 5×10−5 (Ω cm)−1. The deposition rates were between 0.7 and 1.2 nm s−1.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00618884

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