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TEM image contrast from antiphase domains in GaAs: Ge(001) grown by MBE (1984)

Gowers, J. P.

Springer

Applied physics 34 (1984), S. 231-236

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ISSN: 1432-0630

Keywords: 68.55 ; 61.70

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Antiphase domains occur in thin GaAs epitaxial films grown on Ge(001) by molecular beam epitaxy. The domains have been imaged by transmission electron microscopy using 200-type reflections in dark field. The carefully chosen imaging conditions with convergent illumination ensure that doubly diffracted beams from a pair of first order Laue zone discs contribute to the singly diffracted 200-type beams. The three Bragg reflections may add in or out of phase to give domains in either light or dark contrast depending on their polarity.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00616577

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