ISSN:
1432-0630
Keywords:
61.80
;
71.55
;
78.70
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Positron annihilation and Hall effect inn-InP crystals as a function of electron irradiation up to 1 · 1019 cm−2 and post-irradiated isochronal annealing up to 550 °C have been studied. It is concluded that in irradiatedn-InP samples positrons interact with negatively charged acceptor-type defect with level atE c −0.33 eV, probablyV In (primary defect). In post-irradiated isochronal annealed (up to 330 °C) samples ofn-InP positron trapping occurs preferably in secondary defects-vacancy clusters, which are formed in the temperature range (150–300 °C). Inn-InP crystals containing radiation induced defects the trapping rate was found to decrease with temperature in the range (300–77) K.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00615071
