ISSN:
1618-2650
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Summary Total reflection X-ray fluorescence (TXRF) is used for non-destructive determination of depth profiling. A numerical processing is presented as impurity quantification in the continuum excitation TXRF without using standards. Dependences of concentration of impurities on depths ranging from a few tens to thousands Angströms are given for Fe and Cu on Si-wafer. The detection limits are in the range of 1010 atoms/cm2. The method was checked with Secondary Ion Mass Spectrometry (SIMS) and the agreement is reasonably good.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00326342