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  • 1
    Electronic Resource
    Electronic Resource
    The exoelectronic emission of germanium and silicon (1968)
    Springer
    Russian physics journal 11 (1968), S. 70-72 
    Details
    ISSN: 1573-9228
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The experimental results of a study of the exoemission of germanium and silicon following irradiation and mechanical processing are given. An analysis of the data obtained shows the correlation between the exoelectronic emission and the defects in the surface layers of the semiconductor. The relationships obtained are useful for understanding the mechanism of exoemission, as well as for the application of the exoemission method for estimating the physical condition of surface layers which are damaged as a result of mechanical action or radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00820481
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