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Core-level study of WSi2 (110) (1994)

Johansson, H. I. P. ; Håkansson, K. L. ; Johansson, L. I. ; [et al.]

Springer

The European physical journal 96 (1994), S. 87-92

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ISSN: 1434-6036

Keywords: 73.20.-r ; 79.60.Bm

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract Angle resolved core level studies of the Si 2p and W 4f levels have been carried out on the (110) surface of a WSi2 single crystal using synchrotron radiation. Surface shifted components have been revealed both in the Si 2p and W 4f spectra. Investigations were carried out at two different annealing temperatures. The results indicate Si enrichment at the surface, and a larger enrichment after the higher temperature anneals. The reactivity upon initial oxygen exposure was investigated. Strong Si oxidation was observed but chemically shifted W 4f components could also be detected.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01313018

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