ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A simple method for the fabrication of Fabry–Perot mirrors of InGaAsP/GaAs lasers is presented. The vertical and smooth wall etching is done for active layers only (not for both active and cladding layers), by an H2SO4:H2O2:H2O=3:1:1 etchant for 2–5 s. Since the active layers are much thinner than the cladding layers, the etching becomes much easier. The threshold current density of the etched mirror laser is ∼4.4 kA/cm2, about 1.1 times that of the cleaved laser, and the mirror reflectivity is evaluated as 29.4% (cleaved 31.4%).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341626