Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 5360-5366
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amorphous Si/Nb superlattices with modulation wavelengths ranging from 20–200 A(ring) have been grown on sapphire substrates at 100–150 °C by dual e-beam evaporation in an ultra-high-vacuum (UHV) system. The low-angle x-ray diffraction data can be accounted for by a symmetric trapezoidal composition profile model. The intermixing at the layer interfaces is estimated to be 6–12 A(ring), depending on the substrate temperatures. In the film growth direction, the coherent domain size of the polycrystalline Nb layers scales with the Nb layer thickness. High-resolution transmission electron microscopy reveals the existence of microcrystallites in the 20-A(ring)-thick amorphous Nb layers; also resolved are the microstructure of the substrate/superlattice and superlattice/thick-Nb layer interfaces. In addition, Auger depth profiling results are also consistent with the expected composition modulation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343730
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