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Full-aperture, high-power semiconductor laser (1989)

Waters, R. G. ; Dalby, R. J. ; Emanuel, M. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 2534-2535

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A single quantum well laser with a 2-mm-wide aperture has exhibited low threshold current density and nearly 100% packing fraction. The lateral structure relies on epitaxial growth on a corrugated substrate to frustrate radiative lateral processes and it thus eliminates the need for isolation at least for incoherent operation. Threshold current densities are comparable to those for low-power devices, and slope efficiencies remain undiminished to our current limit where 10.7 W per facet is attained. The aperture size is limited only by our fixturing arrangement.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101066

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