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Fabrication of GaInAs quantum disks using self-organized InP islands as a mask in wet chemical etching (1996)

Sopanen, M. ; Lipsanen, H. ; Ahopelto, J.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 4029-4031

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: GaInAs quantum disks are fabricated by wet chemical etching from a GaInAs/GaAs near-surface quantum well using self-organized InP islands as an etch mask. InP islands are formed in coherent Stranski–Krastanow growth mode by metalorganic vapor phase epitaxy. The free-standing GaInAs/GaAs columns, produced by a three-step etching process, are overgrown at 550 °C. The luminescence efficiency per emitting area from the regrown quantum disks is one order of magnitude larger than that from a regrown reference quantum well. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117860

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