ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract X-ray spectral microanalysis, optical transmission measurements at near-infrared wavelengths, and x-ray diffractometry are used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads to an increase in the concentration of excess arsenic trapped in the growing layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187485