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Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates (1997)

Dymova, N. N. ; Kunitsyn, A. E. ; Chaldyshev, V. V. ; [et al.]

Springer

Semiconductors 31 (1997), S. 1217-1220

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ISSN: 1063-7826

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract The electrical properties and low-temperature (4.2 K) photoluminescence of heavily doped n-type layers produced by silicon and silicon/phosphorus implantation into undoped and indiumdoped Czochralski grown semi-insulating GaAs substrates have been investigated. It is found that Si+P co-implantation results in suppression of deep levels in the anion sublattice, an increase of donor activation efficiency, and a sharper carrier concentration profile in both types of substrates. The use of indium-doped substrates enhances radiation defect annealing, but does not change the donor activation efficiency.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.1187296

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