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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6386-6388 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of magnetostatic interactions on the giant magnetoresistive (GMR) response of NiFe/Cu/NiFe spin valves are studied using an analytical model. The model is applicable to devices small enough for the magnetic layers to exhibit single-domain behavior. Devices having lengths in the track-width direction of 10 μm and interlayer separations of 4.5 nm are studied. Stripe heights are varied from 0.5 to 2 μm. The magnetization of one magnetic layer is pinned by a transverse pinning field that is varied from 0 to 24 kA/m (300 Oe). GMR curves for transverse fields are calculated. At zero external field the magnetization of the layers shows a tendency to align themselves antiparallel in the transverse direction. This results in an offset from the ideal biasing of the device. Broadening of the curves due to shape anisotropy occurs with decreasing stripe height and increasing magnetic layer thickness, and the magnetization in the pinned layer becomes less stable. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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