Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2016-2018
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The use of a plasma during the deposition of epitaxial silicon from 750 to 800 °C is explored. Emphasis is placed on enhancement of the deposition process as opposed to the predeposition surface clean. Plasma enhancement of the deposition process is observed without a change in the apparent activation energy, and the mild ion bombardment (plasma) exposure during deposition introduced no additional defects observable by cross-sectional transmission electron microscopy. Plasma enhancement is also shown to facilitate deposition of high-quality epitaxial silicon films with low levels of unintentional impurity incorporation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98278
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