Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 3512-3516
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The residual impurities in Hg0.8Cd0.2Te crystal have been investigated by using secondary-ion mass spectrometry. It was observed that the impurities are richer in near-surface layer than bulk material. This phenomenon was proved to be related to defect gettering by surface damage. In addition, the measurements of Hall effect and infrared spectra in gettered and ungettered Hg0.8Cd0.2Te wafers have been performed. It was found that the electrical properties of gettered Hg0.8Cd0.2Te wafers were superior to ungettered wafers. The absorption edges moved towards shorter wavelengths and the average transmittance increased in gettered wafers. These can probably be explained by assuming the residual impurity concentration in gettered wafers is relatively low. The results indicate that the defect gettering technique can be used to effectively reduce residual impurities in Hg0.8Cd0.2Te wafers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348492
|
Location |
Call Number |
Expected |
Availability |
