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    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2487-2488 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 A(ring)) were observed on (111) Pt-coated Si substrates when heat treated at 450 °C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 A(ring) film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.
    Type of Medium: Electronic Resource
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