Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2487-2488
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 A(ring)) were observed on (111) Pt-coated Si substrates when heat treated at 450 °C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 A(ring) film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106941
|
Location |
Call Number |
Expected |
Availability |