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  • American Institute of Physics (AIP)  (241,929)
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  • 1
    Electronic Resource
    Electronic Resource
    Semi-insulating properties and photoluminescence quenching in Cu-diffused InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4546-4550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of high-resistivity InP with resistivity up to 107 Ω cm, obtained by thermal diffusion of Cu at 800 °C for over 20 h into undoped and p-type InP samples, are investigated. Hall-effect measurements showed that the compensation mechanism in the slowly cooled sample is different from that in the quickly cooled samples. Photoluminescence was quenched in the quickly cooled samples when annealed at 350 °C and the anneal temperature at which the sample resistivity and carrier mobility reached the maximum. It is shown that the electrical compensation in the slowly cooled sample could be understood by a simple deep-level compensation model. However, the semi-insulating behavior of the quickly cooled samples appears to be consistent with an internal Schottky depletion model associated with the Cu precipitates. The photoluminescence quenching is due to the Cu precipitates acting as effective nonradiative recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354372
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  • 2
    Electronic Resource
    Electronic Resource
    Pyrite thin films: Improvements in their optical and electrical properties by annealing at different temperatures in a sulfur atmosphere (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4551-4556 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Iron pyrite thin films prepared by flash evaporation of pyrite powder have been annealed at different temperatures in a sulfur atmosphere. We present some results on the influence of the annealing temperature (from 250 to 450 °C) on the optical and electrical properties of three groups of samples with different thicknesses ((approximately-equal-to)0.3, 0.6, and 1 μm, respectively). Sulfuration temperature has a clear influence on the optical absorption and electrical resistivity of the films, with some differences in their behavior depending on the film thickness. In light of the available present knowledge of pyrite thin films, interpretation of the obtained results is difficult, it suggests that the shape of the optical absorption curves (and their absorption edge) at low photon energies is determined by the density of point defects, which decreases on increasing the annealing temperature. On the other hand, the electrical resistivity seems to be influenced by both the film grain size and point defect density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354373
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  • 3
    Electronic Resource
    Electronic Resource
    Comparisons of one- and two-dimensional three-moment fluid models for rf glow discharges (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 839-847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-consistent nonequilibrium fluid models of both the two-dimension (2D) and one-dimension (1D) are presented. In the 2D simulations, the models evaluate the quantitative effects of both radial and axial flow dynamics inside a cylindrically symmetric parallel-plate geometry. The 1D model assumes that the radius of the electrode is much larger than the electrode gap and the moment distributions are uniform along the radial direction. The models are based on the first three moments of the Boltzmann equation and Poisson's equation. Radio frequency (rf) glow discharge simulations from those two fluid models are presented and compared in this study. The comparisons are presented in terms of plasma density, electric field, mean energy, and ionization rate. Results of the 1D fluid model are close to those at the center of the reactor from the 2D simulations. Nonuniform profiles along the radial direction are obtained from the 2D simulations due to the radial dynamics. Higher electron mean energy in the middle region of the radial sheath is observed. The maximum ionization rate is located in the radial sheath region and agrees with the experimental observation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354875
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  • 4
    Electronic Resource
    Electronic Resource
    Transport model of charged particle behavior in the afterglow region of a microwave generated oxygen plasma (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 825-831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper a model of charged particle behavior in a low-pressure oxygen plasma is developed, and compared with experimental results. Agreement is excellent. It is demonstrated that the extremely high temperature ((approximately-greater-than)1 eV) of electrons in these plasmas results in diffusion totally dominating the transport of charged species. It is also shown that charged particle recombination on the walls of a quartz reactor is insignificant. Finally, the influence of the electron temperature profile must be fully considered for accurate results. This work complements an earlier model of radical behavior in these plasmas. Both are needed to fully understand materials modification in these plasmas, which has been shown to involve a synergism between radicals and charged species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354873
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  • 5
    Electronic Resource
    Electronic Resource
    The role of negative ions in the formation of particles in low-pressure plasmas (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 853-861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large particles (tens of nm to tens of μm in diameter) are problematic in low-pressure (〈1 Torr) plasma processing (etching, deposition) discharges because they can contaminate the product and can perturb electron transport. Although the source of these particles has been studied by a number of groups, a definitive explanation is still lacking. In this paper, we theoretically investigate the role of negative ions in the formation of large clusters, the precursors to particles, in low-pressure plasmas. We find that the formation of particles requires a critically large cluster. Forming the critically large cluster requires longer residence times in the plasma than is usually possible if clustering involves only neutral particles. We propose that negatively charged intermediates, which are trapped in electropositive plasmas, increase the average residence time of clusters to allow the growth of critically large clusters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354877
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  • 6
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy of high-energy heavy ion irradiation-induced defects in n-type germanium (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 868-871 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Swift heavy ion irradiation-induced defects have been studied in n-type germanium at room temperature using deep level transient spectroscopy. Several electron traps have been observed after irradiation. The corresponding energies have been determined to be at Ec−0.22, Ec−0.275, Ec−0.29, Ec−0.32, and Ec−0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temperature and 200 °C. Comparison of our results with previously published ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354879
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  • 7
    Electronic Resource
    Electronic Resource
    Time-resolved electric-field measurements in 30 kHz hydrogen discharges by optical emission Stark spectroscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 862-867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal behavior of the cathode sheath in 30 kHz 0.4–1 Torr H2 discharges has been investigated by optical emission spectroscopy. Analysis of the Stark splitting of plasma-induced H Balmer delta emission was used to measure the electric field with spatial and temporal resolution in the instantaneous cathode sheath. The location of the plasma/sheath boundary was determined from the position of the maximum of the H2 d 3Πu→a 3Σg+ (0,0) Q1 emission at 622.5 nm. Both methods showed that the sheath width increases as the cathode voltage becomes more negative, whereas the width remains constant as the applied voltage drops off. Analysis of the electric-field profile provided information on the time evolution of the ion density close to the electrode during the cathode half-cycle, in agreement with recent numerical calculations. At the beginning of the anodic half-cycle an intense flash of plasma-induced emission was observed, localized within 3 mm from the electrode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354878
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  • 8
    Electronic Resource
    Electronic Resource
    Surface roughness and the scattering of glancing-angle x rays: Application to x-ray lenses (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 877-883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hollow glass fibers can guide x rays because glancing-angle collisions with a smooth glass surface are highly reflective. Surface roughness decreases this reflectivity. We have developed relatively simple expressions for the effects of surface roughness on x-ray scattering, and we relate our results to the theoretical efficiency of x-ray lenses formed from bundles of hollow glass fibers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354881
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  • 9
    Electronic Resource
    Electronic Resource
    Vacancy-type defects in crystalline and amorphous SiO2 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 884-890 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron lifetime spectroscopy and two-dimensional angular correlation of annihilation radiation have been used to investigate grown-in vacancy structures in synthetic crystalline α-SiO2, synthetic fused quartz, and in a 60-μm-thick chemical-vapor-deposited amorphous SiO2 film. For α-SiO2 a ∼300 ps lifetime component suggests trapping by either silicon monovacancies or by oxygen divacancies (or both). The vacancies are neutral and present at a concentration level of 1017/cm3. The positron bulk lifetime for α-SiO2 is estimated to be ∼238 ps in good agreement with semiempirical predictions. In the fused quartz significant positronium formation is found (80%) and the remaining positrons annihilate in voids yielding a lifetime of ∼500 ps. The amorphous SiO2 film contains a mixture of small vacancy clusters and voids and ∼30% of the positrons form positronium. Heat treatment above 950 °C results in a substantial reduction in defect concentration, but up to 1100 °C a small vacancy cluster contribution persists. The positron data indicate that positronium formation in the fused quartz and in the amorphous film takes place in the voids.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354882
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  • 10
    Electronic Resource
    Electronic Resource
    Surface properties of perovskites and their response to ion bombardment (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 872-876 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy has been used to study the surface composition and chemistry of two perovskites: SrTiO3 and Pb(Zr,Ti)O3 (commonly known as PZT). It is seen that ion bombardment, which is a common surface modification technique, can cause substantial changes in these oxides. The PZT surface undergoes surface depletion of lead along with chemical reduction of the Pb2+ ion to its metallic state. The Zr/(Ti+Zr) ratio also changes with sputtering, but the total oxygen to cation ratio is unchanged. On the other hand, the surface stoichiometry of SrTiO3 is almost unaffected by ion bombardment. In all the perovskites, irrespective of whether the composition changes or not, a substantial amount of surface Ti is reduced to a lower valency state on sputtering. Most of this component is restored back to the original Ti4+ state when Ni is evaporated on these surfaces, indicating that the reduced state is associated with a damaged outermost surface that can be repaired with an adsorbate. The implication of these results to the bonding properties of these materials have been discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354880
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