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  • Electronics and Electrical Engineering  (863)
  • 2000-2004  (863)
  • 1
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    NASA Tech Briefs, January 2001 (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: The topics include: 1) A "Model" of Interactive Engineering; 2) Feature Section: Communications Technology; 3) lnReview; 4) Application Briefs; 5) Submillimeter-Wave Image Sensor; 6) Ultrasonic/Sonic Drill/Corers With Integrated Sensors; 7) Normally Closed, Piezoelectrically Actuated Microvalve; 8) Magnetostrictively Actuated Valves for Cryosurgical Probes; 9) Remote Sensing of Electric Fields in Clouds; 10) Wireless-Communication Headset Subsystem To Enhance Signaling; 11) Power Amplifier With 9 to 13 dB of Gain From 65 to 146 GHz; 12) Humidity Interlock for Protecting a Cooled Laser Crystal; 13) A Lightweight Ambulatory Physiological Monitoring System; 14) Improvements in a Lightning-Measuring Instrument; 15) Broad-Band, Noninvasive Radio-Frequency Current Probe; 16) Web-Based Technology Distributes Lean Models; 17) Software Guides Aeroelastic-Systems Design; and 18) Postprocessing Software for Micromechanics Analysis Code. A Photonics West 2001 Preview Tech Brief supplement to this January 2001 issue is also included.
    Keywords: Electronics and Electrical Engineering
    Type: (ISSN 0145-319X)
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  • 2
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    Apparatus for measuring high frequency currents (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: An apparatus for measuring high frequency currents includes a non-ferrous core current probe that is coupled to a wide-band transimpedance amplifier. The current probe has a secondary winding with a winding resistance that is substantially smaller than the reactance of the winding. The sensitivity of the current probe is substantially flat over a wide band of frequencies. The apparatus is particularly useful for measuring exposure of humans to radio frequency currents.
    Keywords: Electronics and Electrical Engineering
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  • 3
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    Evolvable circuit with transistor-level reconfigurability (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: An evolvable circuit includes a plurality of reconfigurable switches, a plurality of transistors within a region of the circuit, the plurality of transistors having terminals, the plurality of transistors being coupled between a power source terminal and a power sink terminal so as to be capable of admitting power between the power source terminal and the power sink terminal, the plurality of transistors being coupled so that every transistor terminal to transistor terminal coupling within the region of the circuit comprises a reconfigurable switch.
    Keywords: Electronics and Electrical Engineering
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  • 4
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    Thin layer composite unimorph ferroelectric driver and sensor (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.
    Keywords: Electronics and Electrical Engineering
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  • 5
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    Zee electrical interconnect (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: An interconnect, having some length, that reliably connects two conductors separated by the length of the interconnect when the connection is made but in which one length if unstressed would change relative to the other in operation. The interconnect comprises a base element an intermediate element and a top element. Each element is rectangular and formed of a conducting material and has opposed ends. The elements are arranged in a generally Z-shape with the base element having one end adapted to be connected to one conductor. The top element has one end adapted to be connected to another conductor and the intermediate element has its ends disposed against the other end of the base and the top element. Brazes mechanically and electrically interconnect the intermediate element to the base and the top elements proximate the corresponding ends of the elements. When the respective ends of the base and the top elements are connected to the conductors, an electrical connection is formed therebetween, and when the conductors are relatively moved or the interconnect elements change length the elements accommodate the changes and the associated compression and tension forces in such a way that the interconnect does not mechanically fatigue.
    Keywords: Electronics and Electrical Engineering
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  • 6
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    Resolver to 360.degree. linear analog converter and method (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: The converter produces a linear analog signal that is linearly proportional to a shaft angle of a resolver over 360.degree.. An excitation cosine signal supplied to the resolver and a response cosine signal received from the output windings of the resolver are converted to logic level signals. Digital logic is performed on the logic level signals in a programmable digital logic device to produce a logic level pulse-width modulated signal. The logic level pulse-width modulated signal is used to control a switch to switch between two reference voltage levels to produce a pulse-width modulated signal, which is filtered and buffered to produce the linear analog signal.
    Keywords: Electronics and Electrical Engineering
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  • 7
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    Driven shielding capacitive proximity sensor (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-27
    Description: A capacitive proximity sensing element, backed by a reflector driven at the same voltage as and in phase with the sensor, is used to reflect the field lines away from a grounded robot arm towards an intruding object, thus dramatically increasing the sensor's range and sensitivity.
    Keywords: Electronics and Electrical Engineering
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  • 8
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    Multi sensor transducer and weight factor (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-27
    Description: A multi-sensor transducer and processing method allow insitu monitoring of the senor accuracy and transducer `health`. In one embodiment, the transducer has multiple sensors to provide corresponding output signals in response to a stimulus, such as pressure. A processor applies individual weight factors to reach of the output signals and provide a single transducer output that reduces the contribution from inaccurate sensors. The weight factors can be updated and stored. The processor can use the weight factors to provide a `health` of the transducer based upon the number of accurate versus in-accurate sensors in the transducer.
    Keywords: Electronics and Electrical Engineering
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  • 9
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    Temperature Distributions in Hollow Cathode Emitters (2004)
    In:  Other Sources
    Details
    Publication Date: 2019-08-24
    Description: Life-limiting processes in hollow cathodes are determined largely by the temperature of the emitter. To support development of cathode life models we have developed a noncontact temperature measurement technique which employs a stepper motor-driven fiber optic probe. The probe is driven inside the hollow cathode and collects light radiated by the hot interior surface of the emitter. Ratio pyrometry is used determine the axial temperature profile. Thermocouples on the orifice plate provide measurements ofthe external temperature during cathode operation and are used to calibrate the pyrometer system in situ with a small oven enclosing the externally heated cathode. Initial measurements of the temperature distribution in a hollow cathode with the same geometry as a cathode that failed after operating at 12 A emission current for 27800 hours are discussed.
    Keywords: Electronics and Electrical Engineering
    Type: AAIA Paper-2004-4116 , 40th AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit; Jul 11, 2004 - Jul 14, 2004; Fort Lauderdale, FL; United States
    Format: text
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  • 10
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    Using a micromachined magnetostatic relay in commutating a DC motor (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A DC motor is commutated by rotating a magnetic rotor to induce a magnetic field in at least one magnetostatic relay in the motor. Each relay is activated in response to the magnetic field to deliver power to at least one corresponding winding connected to the relay. In some cases, each relay delivers power first through a corresponding primary winding and then through a corresponding secondary winding to a common node. Specific examples include a four-pole, three-phase motor in which each relay is activated four times during one rotation of the magnetic rotor.
    Keywords: Electronics and Electrical Engineering
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  • 11
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    Fabricating and using a micromachined magnetostatic relay or switch (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.
    Keywords: Electronics and Electrical Engineering
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  • 12
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    Kinetic Inductance Photodetectors Based on Nonequilibrium Response in Superconducting Thin-Film Structures (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: While experimental studies of kinetic-inductance sensors have been limited so far by the temperature range near the superconducting transition, these detectors can be very sensitivity at temperatures well below the transition, where the number of equilibrium quasiparticles is exponentially small. In this regime, a shift of the quasiparticle chemical potential under radiation results in the change of the kinetic inductance, which can be measured by a sensitive SQUID readout. We modeled the kinetic inductance response of detectors made from disordered superconducting Nb, NbC, and MoRe films. Low phonon transparency of the interface between the superconductor and the substrate causes substantial re-trapping of phonons providing high quantum efficiency and the operating time of approximately 1 ms at 1 K. Due to the small number of quasiparticles, the noise equivalent power of the detector determined by the quasiparticle generation-recombination noise can be as small as approximately 10(exp -19) W/Hz(exp 1/2) at He4 temperatures.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 112-120; JPL-Publ-01-18
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  • 13
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    Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 485-494; JPL-Publ-01-18
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  • 14
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    Automated Design of Quantum Circuits (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: In order to design a quantum circuit that performs a desired quantum computation, it is necessary to find a decomposition of the unitary matrix that represents that computation in terms of a sequence of quantum gate operations. To date, such designs have either been found by hand or by exhaustive enumeration of all possible circuit topologies. In this paper we propose an automated approach to quantum circuit design using search heuristics based on principles abstracted from evolutionary genetics, i.e. using a genetic programming algorithm adapted specially for this problem. We demonstrate the method on the task of discovering quantum circuit designs for quantum teleportation. We show that to find a given known circuit design (one which was hand-crafted by a human), the method considers roughly an order of magnitude fewer designs than naive enumeration. In addition, the method finds novel circuit designs superior to those previously known.
    Keywords: Electronics and Electrical Engineering
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  • 15
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    Displacement Damage in Bipolar Linear Integrated Circuits (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.
    Keywords: Electronics and Electrical Engineering
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  • 16
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    Digital circuits using universal logic gates (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: According to the invention, a digital circuit design embodied in at least one of a structural netlist, a behavioral netlist, a hardware description language netlist, a full-custom ASIC, a semi-custom ASIC, an IP core, an integrated circuit, a hybrid of chips, one or more masks, a FPGA, and a circuit card assembly is disclosed. The digital circuit design includes first and second sub-circuits. The first sub-circuits comprise a first percentage of the digital circuit design and the second sub-circuits comprise a second percentage of the digital circuit design. Each of the second sub-circuits is substantially comprised of one or more kernel circuits. The kernel circuits are comprised of selection circuits. The second percentage is at least 5%. In various embodiments, the second percentage could be at least 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, or 95%.
    Keywords: Electronics and Electrical Engineering
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  • 17
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    Digital logic optimization using selection operators (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: According to the invention, a digital design method for manipulating a digital circuit netlist is disclosed. In one step, a first netlist is loaded. The first netlist is comprised of first basic cells that are comprised of first kernel cells. The first netlist is manipulated to create a second netlist. The second netlist is comprised of second basic cells that are comprised of second kernel cells. A percentage of the first and second kernel cells are selection circuits. There is less chip area consumed in the second basic cells than in the first basic cells. The second netlist is stored. In various embodiments, the percentage could be 2% or more, 5% or more, 10% or more, 20% or more, 30% or more, or 40% or more.
    Keywords: Electronics and Electrical Engineering
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  • 18
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    Class E/F switching power amplifiers (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.
    Keywords: Electronics and Electrical Engineering
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  • 19
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    Power supply with air core transformer and seperated power supplies for high dynamic range (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A power supply for a quadrupole mass spectrometer which operates using an RF signal. The RF signal is controllable via a feedback loop. The feedback loop is from the output, through a comparator, and compared to a digital signal. An air core transformer is used to minimize the weight. The air core transformer is driven via two out of phase sawtooth signals which drive opposite ends of the transformer.
    Keywords: Electronics and Electrical Engineering
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  • 20
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    Three-dimensional modular electronic interconnection system (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A three-dimensional connection system uses a plurality of printed wiring boards with connectors completely around the printed wiring boards, and connected by an elastomeric interface connector. The device includes internal space to allow room for circuitry. The device is formed by stacking an electronics module, an elastomeric interface board on the electronics module such that the interface board's exterior makes electrical connection with the connectors around the perimeter of the interface board, but the internal portion is open to allow room for the electrical devices on the printed wiring board. A plurality of these devices are stacked between a top stiffener and a bottom device, and held into place by alignment elements.
    Keywords: Electronics and Electrical Engineering
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  • 21
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    Magnetically coupled signal isolator (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A current determiner having an output at which representations of input currents are provided having an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a non-magnetic conductive layer. The sensor can be electrically connected to electronic circuitry formed in the substrate including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor, and can include further current sensors in bridge circuits.
    Keywords: Electronics and Electrical Engineering
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  • 22
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    Electron tunneling infrared sensor module with integrated control circuitry (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: In an integrated electron tunneling sensor, an automatic tunneling control circuit varies a high voltage bias applied to the sensor deflection electrode in response to changes in sensor output to maintain the proper gap between the sensor tip and membrane. The control circuit ensures stable tunneling activity in the presence of large signals and other disturbances to the sensor. Output signals from the module may be derived from the amplified sensor output. The integrated sensor module is particularly well adapted for use in blood glucose measurement and monitoring system.
    Keywords: Electronics and Electrical Engineering
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  • 23
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    Sensor arrays for detecting analytes in fluids (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A sensor array for detecting an analyte in a fluid, comprising at least first and second chemically sensitive resistors electrically connected to an electrical measuring apparatus, wherein each of the chemically sensitive resistors comprises a mixture of nonconductive material and a conductive material. Each resistor provides an electrical path through the mixture of nonconductive material and the conductive material. The resistors also provide a difference in resistance between the conductive elements when contacted with a fluid comprising an analyte at a first concentration, than when contacted with an analyte at a second different concentration. A broad range of analytes can be detected using the sensors of the present invention. Examples of such analytes include, but are not limited to, alkanes, alkenes, alkynes, dienes, alicyclic hydrocarbons, arenes, alcohols, ethers, ketones, aldehydes, carbonyls, carbanions, polynuclear aromatics, organic derivatives, biomolecules, sugars, isoprenes, isoprenoids and fatty acids. Moreover, applications for the sensors of the present invention include, but are not limited to, environmental toxicology, remediation, biomedicine, material quality control, food monitoring and agricultural monitoring.
    Keywords: Electronics and Electrical Engineering
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  • 24
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    Design and Performance of a Miniature Radar L-Band Transceiver (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: Radar electronics developed for past JPL space missions historically had been custom designed and as such, given budgetary, time, and risk constraints, had not been optimized for maximum flexibility or miniaturization. To help reduce cost and risk of future radar missions, a generic radar module was conceived. The module includes a 1.25-GHz (L-band) transceiver and incorporates miniature high-density packaging of integrated circuits in die/chip form. The technology challenges include overcoming the effect of miniaturization and high packaging density to achieve the performance, reliability, and environmental ruggedness required for space missions. The module was chosen to have representative (generic) functionality most likely required from an L-band radar. For very large aperture phased-array spaceborne radar missions, the large dimensions of the array suggest the benefit of distributing the radar electronics into the antenna array. For such applications, this technology is essential in order to bring down the cost, mass, and power of the radar electronics module replicated in each panel of the array. For smaller sized arrays, a single module can be combined with the central radar controller and still provide the bene.ts of configuration .exibility, low power, and low mass. We present the design approach for the radar electronics module and the test results for its radio frequency (RF) portion: a miniature, low-power, radiation-hard L-band transceiver.
    Keywords: Electronics and Electrical Engineering
    Type: Interplanetary Network Progress Report; 42-158; 1-13
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  • 25
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    Technical Challenges in Reliable Microelectronics Packaging of Microelectromechanical Systems (MEMS) for Space Applications (2000)
    In:  Other Sources
    Details
    Publication Date: 2019-08-17
    Description: MEMS have shown a significant promise in the last decade for a variety of applications such as air-bag, pressure sensors, accelerometer, microgyro, chemical sensors, artificial nose, etc. Standard semiconductor microelectronics packaging needs the integrated circuits (IC) to be protected from the harsh environment, and provide electrical communication with the other parts of the circuit, facilitate thermal dissipation efficiently, and impart mechanical strength to the silicon die. Microelectronics packaging involves wafer dicing, bonding, lead attachment, encapsulation to protect from the environment, electrical integrity, and package leak tests to assure the reliable IC packaging technology. Active elements or microstructures in MEMS devices often interfaces with the hostile environment where packaging leak tests and testing of such devices using chemical and mechanical parameters will be very difficult and expensive. Packaging of MEMS is significantly complex as they serve to protect from the environment and microstructures interact with the same environment to measure or affect the desired physical or chemical parameters. The most of the silicon circuitry is sensitive to temperature, moisture, magnetic field, light, and electromagnetic interference. The package must then protect the on-board silicon circuitry while simultaneously exposing the microsensor to the effect it measures to assure the packaging technology of MEMS. MEMS technology has a major application in developing a microspacecraft for space systems provided reliability of MEMS packaging technology is sufficiently addressed. This MEMS technology would eventually miniaturize many of the components of the spacecraft to reach the NASA's goal by building faster, cheaper, better, smaller spacecraft to explore the space more effectively. This paper discusses the latest developments in the MEMS technology and challenging technical issues in the packaging of hermetically sealed and non-hermetically sealed MEMS sensor devices for microspacecraft applications.
    Keywords: Electronics and Electrical Engineering
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  • 26
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    Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.
    Keywords: Electronics and Electrical Engineering
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  • 27
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    A Dual Polarized Quasi-Optical SIS Mixer at 550-GHz (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: We describe the design, fabrication, and the performance of a low-noise dual-polarized quasi-optical superconductor insulator superconductor (SIS) mixer at 550 GHz. The mixer utilizes a novel cross-slot antenna on a hyperhemispherical substrate lens, two junction tuning circuits, niobium trilayer junctions, and an IF circuit containing a lumped element 180 deg hybrid. The antenna consists of an orthogonal pair of twin-slot antennas, and has four feed points, two for each polarization. Each feed point is coupled to a two-junction SIS mixer. The 180 deg IF hybrid is implemented using a lumped element/microstrip circuit located inside the mixer block. Fourier transform spectrometer (FTS) measurements of the mixer frequency response show good agreement with computer simulations. The measured co-polarized and cross-polarized patterns for both polarizations also agree with the theoretical predictions. The noise performance of the dual-polarized mixer is excellent, giving uncorrected receiver noise temperature of better than 115 K (DSB) at 528 GHz for both the polarizations.
    Keywords: Electronics and Electrical Engineering
    Type: Rept-2000-04
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  • 28
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    Driving a quadrupole mass spectrometer via an isolating stage (2002)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: Driving a quadrupole mass spectrometer includes obtaining an air core transformer with a primary and a secondary, matching the secondary to the mass spectrometer, and driving the primary based on first and second voltage levels. Driving of the primary is via an isolating stage that minimizes low level drive signal coupling.
    Keywords: Electronics and Electrical Engineering
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  • 29
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    SIS Mixer Design for a Broadband Millimeter Spectrometer Suitable for Rapid Line Surveys and Redshift Determinations (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: We present some detail of the waveguide probe and SIS mixer chip designs for a low-noise 180-300 GHz double- sideband receiver with an instantaneous RF bandwidth of 24 GHz. The receiver's single SIS junction is excited by a broadband, fixed-tuned waveguide probe on a silicon substrate. The IF output is coupled to a 6-18 GHz MMIC low- noise preamplifier. Following further amplification, the output is processed by an array of 4 GHz, 128-channel analog autocorrelation spectrometers (WASP 11). The single-sideband receiver noise temperature goal of 70 Kelvin will provide a prototype instrument capable of rapid line surveys and of relatively efficient carbon monoxide (CO) emission line searches of distant, dusty galaxies. The latter application's goal is to determine redshifts by measuring the frequencies of CO line emissions from the star-forming regions dominating the submillimeter brightness of these galaxies. Construction of the receiver has begun; lab testing should begin in the fall. Demonstration of the receiver on the Caltech Submillimeter Observatory (CSO) telescope should begin in spring 2003.
    Keywords: Electronics and Electrical Engineering
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    A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 310-319; JPL-Publ-01-18
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    Results of the 2000 JPL Balloon Flight Solar Cell Calibration Program (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: The 2000 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 27, 2000, and July 5, 2000. All objectives of the flight program were met. Sixty-two modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on sixteen of these modules, and output at a fixed load was measured on thirty-seven modules (forty-six cells), with some modules repeated on the second flight. Nine modules were flown for temperature measurement only. This data was corrected to 28 C and to 1 AU (1.496x10(exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.
    Keywords: Electronics and Electrical Engineering
    Type: JPL-Publ-00-19
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    Storage Characteristics of Lithium Ion Cells (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: Lithium ion cells are being developed under the NASA/Air Force Consortium for the upcoming aerospace missions. First among these missions are the Mars 2001 Lander and Mars 2003 Lander and Rover missions. Apart from the usual needs of high specific energy, energy density and long cycle life, a critical performance characteristic for the Mars missions is low temperature performance. The batteries need to perform well at -20 C, with at least 70% of the rated capacity realizable at moderate discharge rates (C/5). Several modifications have been made to the lithium ion chemistry, mainly with respect to the electrolyte, both at JPL' and elsewhere to achieve this. Another key requirement for the battery is its storageability during pre-cruise and cruise periods. For the Mars programs, the cruise period is relatively short, about 12 months, compared to the Outer Planets missions (3-8 years). Yet, the initial results of our storage studies reveal that the cells do sustain noticeable permanent degradation under certain storage conditions, typically of 10% over two months duration at ambient temperatures, attributed to impedance buildup. The build up of the cell impedance or the decay in the cell capacity is affected by various storage parameters, i.e., storage temperature, storage duration, storage mode (open circuit, on buss or cycling at low rates) and state of charge. Our preliminary studies indicate that low storage temperatures and states of charge are preferable. In some cases, we have observed permanent capacity losses of approx. 10% over eight-week storage at 40 C, compared to approx. 0-2% at O C. Also, we are attempting to determine the impact of cell chemistry and design upon the storageability of Li ion cells.
    Keywords: Electronics and Electrical Engineering
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    Intersubband Transitions in InAs/AlSb Quantum Wells (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k-p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.
    Keywords: Electronics and Electrical Engineering
    Type: MRS Fall Meeting; Jan 01, 2003; Boston, MA; United States
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    Functional Nanostructured Particle Arrays for Nanocrystal Nonvolatile Memories (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: This presentation outlines the performance characteristics of state-of-the-art nonvolatile memory devices and identifies charge storage mechanisms in nanocrystal floating gate materials.
    Keywords: Electronics and Electrical Engineering
    Type: Non-Volatile Memory Technology Symposium 2000: Proceedings; 80-86; JPL-Publ-00-15
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    Proton Damage in Linear and Digital Optocouplers (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: Optocoupler failures occurred on the Topex-Poseidon spacecraft after about two years of operation. Later work in the laboratory showed that the failures were due to extreme sensitivity of LEDs within the optocouplers to displacement damage from protons. Although earlier work had been done on displacement damage in light-emitting diodes, none of the devices studied previously had been heavily damaged at the low radiation levels where the optocouplers failed in space. Subsequent work has shown that LED damage varies over an extremely wide range, depending on the particular manufacturing technology. This paper discusses proton degradation of linear and digital optocouplers. One obvious way to harden optocoupler technologies is to select LEDs that are more resistant to displacement damage. A direct comparison is made of degradation of a commercial linear optocoupler from one manufacturer with a modified version of the same device with a different LED technology. Other factors, including degradation of optical photoresponse and transistor -ain are also discussed, along with basic comparisons of digital and analog optocouplers. Linear optocouplers are designed with somewhat different requirements than digital optocouplers, which not only affects their radiation response but also the interpretation of radiation test data.
    Keywords: Electronics and Electrical Engineering
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    Multi-Band GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays (2002)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 micrometers. The spectral band width of these detectors can be tuned from narrow (DELTA)lamba/lamba approx. 10 %)) to wide (DELTA)lamba/lamba approx. 50 %) allowing various applications. Also, QWIP offers multi-color infrared cameras which is capable of simultaneously acquiring images in different infrared bands. Each pixel of such array consists of vertically stacked, independently readable, QWIP detectors sensitive in different narrow infrared bands. In this article, we discuss the development and results of the 640 x 512 dual-band and four-band QWIP FPAs.
    Keywords: Electronics and Electrical Engineering
    Type: AD-A408864
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    Radiation Response of Emerging FeRAM Technology (2001)
    In:  CASI
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    Publication Date: 2019-08-16
    Description: The test results of measurements performed on two different sizes of ferroelectric random access memory (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial complementary metal oxide semiconductor (CMOS) technology. This paper presents total ionizing dose (TID) testing of 64Kb Ramtron FM1608 and 256Kb Ramtron FM1808.
    Keywords: Electronics and Electrical Engineering
    Type: Non-Volatile Memory Technology Symposium 2001: Proceedings; 77-79; JPL-Publ-01-15
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    New Schemes for Improved Opto-Electronic Oscillator (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: The opto-Electronic Oscillator (OEO) has already demonstrated superior spectral purity as a for microwave and millimeter wave reference signals. Experimental results have produced a performance characterized by noise as low as -50 dBc/Hz at 10 Hz and -140 dBc/Hz for a 10 GHz oscillator. This performance is significant because it was produced by an oscillator that was free running. Since the noise in an OEO is independent of the oscillation frequency, the same performance may also be obtained at higher frequency. The recent work in our laboratory has been focused in three areas: 1) realization of a compact OEO based on semiconductor lasers and modulators, 2) reduction of the close-to-carrier noise of the OEO originating from the 1/f noise of the amplifier, and 3) miniaturization of the OEO. In this paper we report on progress made in these areas, and describe future plans to increase the performance and the efficiency of the OEO.
    Keywords: Electronics and Electrical Engineering
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    Barium light source method and apparatus (2002)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: Visible light emission is obtained from a plasma containing elemental barium including neutral barium atoms and barium ion species. Neutral barium provides a strong green light emission in the center of the visible spectrum with a highly efficient conversion of electrical energy into visible light. By the selective excitation of barium ionic species, emission of visible light at longer and shorter wavelengths can be obtained simultaneously with the green emission from neutral barium, effectively providing light that is visually perceived as white. A discharge vessel contains the elemental barium and a buffer gas fill therein, and a discharge inducer is utilized to induce a desired discharge temperature and barium vapor pressure therein to produce from the barium vapor a visible light emission. The discharge can be induced utilizing a glow discharge between electrodes in the discharge vessel as well as by inductively or capacitively coupling RF energy into the plasma within the discharge vessel.
    Keywords: Electronics and Electrical Engineering
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    Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.
    Keywords: Electronics and Electrical Engineering
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    Wire insulation defect detector (2004)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: Wiring defects are located by detecting a reflected signal that is developed when an arc occurs through the defect to a nearby ground. The time between the generation of the signal and the return of the reflected signal provides an indication of the distance of the arc (and therefore the defect) from the signal source. To ensure arcing, a signal is repeated at gradually increasing voltages while the wire being tested and a nearby ground are immersed in a conductive medium. In order to ensure that the arcing occurs at an identifiable time, the signal whose reflection is to be detected is always made to reach the highest potential yet seen by the system.
    Keywords: Electronics and Electrical Engineering
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    Reference-free direct digital lock-in method and apparatus (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A reference-free direct digital lock-in system (RDDL 10) has a first input coupled to a periodic electrical signal and an output for outputting an indication of a magnitude of a desired periodic signal component. The RDDL also has a second input for receiving a signal (9) that specifies a reference period value, and operates to autonomously generate a lock-in reference signal having a specified period and a phase that is adjusted to maximize a magnitude of the outputted desired periodic signal component. In an embodiment of a measurement system that includes the RDDL 10 an optical source provides a chopped light beam having wavelengths within a predetermined range of wavelengths, and the periodic electrical signal is generated by at least one photodetector that is illuminated by the chopped light beam. In this embodiment the measurement system characterizes, for at least one wavelength of light that is generated by the optical source, a spectral response of the at least one photodetector. The RDDL can operate in nonreal-time upon previously generated and stored digital equivalent values of the periodic electrical signal or signals.
    Keywords: Electronics and Electrical Engineering
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    Alkyl Pyrocarbonate Electrolyte Additives for Performance Enhancement of Li Ion Cells (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Lithium ion rechargeable batteries are being developed for various aerospace applications under a NASA-DoD Interagency program. These applications require further improvements in several areas, specifically in the cycle life for LEO and GEO satellites and in the low temperature performance for the Mars Lander and Rover missions. Accordingly, we have been pursuing research studies to achieve improvement in the low temperature performance, long cycle life and active life of Li ion cells. The studies are mainly focused on electrolytes, to identify newer formulations of new electrolyte additives to enhance Li permeability (at low temperatures) and stability towards the electrode. The latter approach is particularly aimed at the formation suitable SEI (solid electrolyte interphase) on carbon electrodes. In this paper, we report the beneficial effect of using alkyl pyrocarbonates as electrolyte additives to improve the low temperature performance of Li ion cells.
    Keywords: Electronics and Electrical Engineering
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    "Genetically Engineered" Nanoelectronics (2000)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: The quantum mechanical functionality of nanoelectronic devices such as resonant tunneling diodes (RTDs), quantum well infrared-photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs) is enabled by material variations on an atomic scale. The design and optimization of such devices requires a fundamental understanding of electron transport in such dimensions. The Nanoelectronic Modeling Tool (NEMO) is a general-purpose quantum device design and analysis tool based on a fundamental non-equilibrium electron transport theory. NEW was combined with a parallelized genetic algorithm package (PGAPACK) to evolve structural and material parameters to match a desired set of experimental data. A numerical experiment that evolves structural variations such as layer widths and doping concentrations is performed to analyze an experimental current voltage characteristic. The genetic algorithm is found to drive the NEMO simulation parameters close to the experimentally prescribed layer thicknesses and doping profiles. With such a quantitative agreement between theory and experiment design synthesis can be performed.
    Keywords: Electronics and Electrical Engineering
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    Space Radiation Effects and Hardness Assurance for Linear Integrated Circuits (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: New effects that complicate the application of linear devices in space are discussed, including enhanced damage at low dose rate and proton damage, which cause permanent degradation. Transients produced by protons and heavy ions are also discussed.
    Keywords: Electronics and Electrical Engineering
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    On the Dynamics of Two Dimensional Array Beam Scanning Via Coupled Oscillators (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: This presentation will begin with a description of the previous published work contributing to the results reported here. The previously developed one dimensional continuum model will be generalized to two dimensions and a Green's function for the resulting differential equation will be obtained as an eigenfunction expansion. This will be used to obtain dynamic solutions relevant to the steering of the radiated beam. Finally, some remarks concerning limitations on the interoscillator phase difference will be provided.
    Keywords: Electronics and Electrical Engineering
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    3D MEMS in Standard Processes: Fabrication, Quality Assurance, and Novel Measurement Microstructures (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Three-dimensional MEMS microsystems that are commercially fabricated require minimal post-processing and are easily integrated with CMOS signal processing electronics. Measurements to evaluate the fabrication process (such as cross-sectional imaging and device performance characterization) provide much needed feedback in terms of reliability and quality assurance. MEMS technology is bringing a new class of microscale measurements to fruition. The relatively small size of MEMS microsystems offers the potential for higher fidelity recordings compared to macrosize counterparts, as illustrated in the measurement of muscle cell forces.
    Keywords: Electronics and Electrical Engineering
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    Very High Current Density Nb/AlN/Nb Tunnel Junctions for Low-Noise Submillimeter Mixers (2000)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high current density Nb/AlN/Nb tunnel junctions (J(sub c) approximately equal 30 kA/sq cm) . The junctions have low resistance-area products (R(sub N)A approximately 5.6 Omega.sq micron), good subgap to normal resistance ratios R(sub sg)/R(sub N) approximately equal 10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that omega.R(sub N)C = 1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlO(x)/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected receiver noise temperature of T(sub RX) = 110 K (DSB) at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing RF loss in the tuning circuits.
    Keywords: Electronics and Electrical Engineering
    Type: Rept-2000-5
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    Compound Semiconductor Devices for Space Applications (2000)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: Application of semiconductor devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected devices. This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.
    Keywords: Electronics and Electrical Engineering
    Type: Space-Based Observation Technology; 26-1 - 26-9; RTO-MP-61
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    A Low Noise NbTiN-Based 850 GHz SIS Receiver for the Caltech Submillimeter Observatory (2000)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: We have developed a niobium titanium nitride (NbTiN) based superconductor- insulator-superconductor (SIS) receiver to cover the 350 micron atmospheric window. This frequency band lies entirely above the energy gap of niobium (700 GHz), a commonly used SIS superconductor. The instrument uses an open structure twin-slot SIS mixer that consists of two Nb/AlN/NbTiN tunnel junctions, NbTiN thin-film microstrip tuning elements, and a NbTiN ground plane. The optical configuration is very similar to the 850 GHz waveguide receiver that was installed at the Caltech Submillimeter Observatory (CSO) in 1997. To minimize front-end loss, we employed reflecting optics and a cooled beamsplitter at 4 K. The instrument has an uncorrected receiver noise temperature of 205K DSB at 800 GHz and 410K DSB at 900 GHz. The degradation in receiver sensitivity with frequency is primarily due to an increase in the mixer conversion loss, which is attributed to the mismatch between the SIS junction and the twin-slot antenna impedance. The overall system performance has been confirmed through its use at the telescope to detect a wealth of new spectroscopic lines.
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    Accelerated Thermal Cycling and Failure Mechanisms for BGA and CSP Assemblies (2000)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: This paper reviews the accelerated thermal cycling test methods that are currently used by industry to characterize the interconnect reliability of commercial-off-the-shelf (COTS) ball grid array (BGA) and chip scale package (CSP) assemblies. Acceleration induced failure mechanisms varied from conventional surface mount (SM) failures for CSPs. Examples of unrealistic life projections for other CSPs are also presented. The cumulative cycles to failure for ceramic BGA assemblies performed under different conditions, including plots of their two Weibull parameters, are presented. The results are for cycles in the range of -30 C to 100 C, -55 C to 100 C, and -55 C to 125 C. Failure mechanisms as well as cycles to failure for thermal shock and thermal cycling conditions in the range of -55 C to 125 C were compared. Projection to other temperature cycling ranges using a modified Coffin-Manson relationship is also presented.
    Keywords: Electronics and Electrical Engineering
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    Two-Dimensional Array Beam Scanning Via Externally and Mutually Injection Locked Coupled Oscillators (2000)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: Some years ago, Stephan proposed an approach to one dimensional (linear) phased array beam steering which requires only a single phase shifter. This involves the use of a linear array of voltage-controlled electronic oscillators coupled to nearest neighbors. The oscillators are mutually injection locked by controlling their coupling and tuning appropriately. Stephan's approach consists of deriving two signals from a master oscillator, one signal phase shifted with respect to the other by means of a single phase shifter. These two signals are injected into the end oscillators of the array. The result is a linear phase progression across the oscillator array. Thus, if radiating elements are connected to each oscillator and spaced uniformly along a line, they will radiate a beam at an angle to that line determined by the phase gradient which is, in turn, determined by the phase difference between the injection signals.The beam direction is therefore controlled by adjusting this phase difference. Recently, Pogorzelski and York presented a formulation which facilitates theoretical analysis of the above beam steering technique. This was subsequently applied by Pogorzelski in analysis of two dimensional beam steering using perimeter detuning of a coupled oscillator array. The formulation is based on a continuum model in which the oscillator phases are represented by a continuous function satisfying a partial differential equation of diffusion type. This equation can be solved via the Laplace transform and the resulting solution exhibits the dynamic behavior of the array as the beam is steered. Stephan's beam steering technique can be similarly generalized to two-dimensional arrays in which the beam control signals are applied to the oscillators on the perimeter of the array. In this paper the continuum model for this two-dimensional case is developed and the dynamic solution for the corresponding aperture phase function is obtained. The corresponding behavior of the resulting far-zone radiation pattern is displayed as well.
    Keywords: Electronics and Electrical Engineering
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    Multi-sensor electrometer (2003)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: An array of triboelectric sensors is used for testing the electrostatic properties of a remote environment. The sensors may be mounted in the heel of a robot arm scoop. To determine the triboelectric properties of a planet surface, the robot arm scoop may be rubbed on the soil of the planet and the triboelectrically developed charge measured. By having an array of sensors, different insulating materials may be measured simultaneously. The insulating materials may be selected so their triboelectric properties cover a desired range. By mounting the sensor on a robot arm scoop, the measurements can be obtained during an unmanned mission.
    Keywords: Electronics and Electrical Engineering
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    Digital design using selection operations (2004)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: A digital integrated circuit chip is designed by identifying a logical structure to be implemented. This logical structure is represented in terms of a logical operations, at least 5% of which include selection operations. A determination is made of logic cells that correspond to an implementation of these logical operations.
    Keywords: Electronics and Electrical Engineering
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    Modular electronics packaging system (2001)
    In:  CASI
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    Publication Date: 2019-08-15
    Description: A modular electronics packaging system includes multiple packaging slices that are mounted horizontally to a base structure. The slices interlock to provide added structural support. Each packaging slice includes a rigid and thermally conductive housing having four side walls that together form a cavity to house an electronic circuit. The chamber is enclosed on one end by an end wall, or web, that isolates the electronic circuit from a circuit in an adjacent packaging slice. The web also provides a thermal path between the electronic circuit and the base structure. Each slice also includes a mounting bracket that connects the packaging slice to the base structure. Four guide pins protrude from the slice into four corresponding receptacles in an adjacent slice. A locking element, such as a set screw, protrudes into each receptacle and interlocks with the corresponding guide pin. A conduit is formed in the slice to allow electrical connection to the electronic circuit.
    Keywords: Electronics and Electrical Engineering
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    Gap Excitations and Series Loads in Microstrip Lines: Equivalent Network Characterization with Application to THz Circuits (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: At submillimeter wavelengths typical gap discontinuities in microstrip, CPW lines or at antenna terminals, which might contain diodes or active elements, cannot be viewed as simple quasi statically evaluated lumped elements. Planar Schottky diodes at 2.5 THz, for example, have a footprint that is comparable to a wavelength. Thus, apart from modelling the diodes themselves, the connection with their exciting elements (antennas or microstrip) gives rise to parasitics. Full wave or strictly numeric approaches can be used to account for these parasitics but at the expense of generality of the solution and the CPU time of the calculation. In this paper an equivalent network is derived that accurately accounts for large gap discontinuities (with respect to a wavelength) without suffering from the limitations of available numeric techniques.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 527-539; JPL-Publ-01-18
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    Experimental Investigation of Local Oscillator Chains with GaAs Planar Diodes at Cryogenic Temperatures (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: This paper will describe a robust test-bed that has been built to measure multiplier performance over a wide range of temperatures and frequencies. In a 182-212 GRz designed balanced doubler the peak efficiency at 201 GHz improves from 22% to 28% upon cooling from 300 K to 120 K. This stage is then used to pump a 362-424 GRz balanced planar doubler. The peak chain efficiency increases from 3.4% to 6% when the two cascaded doublers are cooled from 300 K to 120 K. This enables the production of 10 mW of peak output power at 377 GHz, which ought to be sufficient for driving the next stage multiplier.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 495-503; JPL-Publ-01-18
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    Temperature Effects in Varactors and Multipliers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 340-351; JPL-Publ-01-18
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    Design and Performance of a 2.7 THz Waveguide Tripler (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: The design and performance of a 0.9 THz to 2.7 THz waveguide tripler are presented. An unusual split block configuration with parallel input and output waveguides accommodates a monolithic membrane diode (MoMeD) circuit. Submicron planar GaAs Schottky diodes in single and antiparallel pairs are implemented with matching filters on a 3-micrometer thick suspended substrate as part of the MoMeD structure. The filters are a combination of short hammerheads and high-low impedance elements. Only a few circuit variations have been measured to date. The best current performance shows an output power of 0.1 microW and an efficiency of 0.002% at the band center frequency of 2.55 THz.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 320-329; JPL-Publ-01-18
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    Novel Multiplexing Technique for Detector and Mixer Arrays (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Future submillimeter and far-infrared space telescopes will require large-format (many 1000's of elements) imaging detector arrays to perform state-of-the-art astronomical observations. A crucial issue related to a focal plane array is a readout scheme which is compatible with large numbers of cryogenically-cooled (typically 〈 1 K) detectors elements. When the number of elements becomes of the order of thousands, the physical layout for individual readout amplifiers becomes nearly impossible to realize for practical systems. Another important concern is the large number of wires leading to a 0.1-0.3 K platform. In the case of superconducting transition edge sensors (TES), a scheme for time-division multiplexing of SQUID read-out amplifiers has been recently demonstrated. In this scheme the number of SQUIDs is equal to the number (N) of the detectors, but only one SQUID is turned on at a time. The SQUIDs are connected in series in each column of the array, so the number of wires leading to the amplifiers can be reduced, but it is still of the order of N. Another approach uses a frequency domain multiplexing scheme of the bolometer array. The bolometers are biased with ac currents whose frequencies are individual for each element and are much higher than the bolometer bandwidth. The output signals are connected in series in a summing loop which is coupled to a single SQUID amplifier. The total number of channels depends on the ratio between the SQUID bandwidth and the bolometer bandwidth and can be at least 100 according to the authors. An important concern about this technique is a contribution of the out-of-band Johnson noise which multiplies by factor N(exp 1/2) for each frequency channel. We propose a novel solution for large format arrays based on the Hadamard transform coding technique which requires only one amplifier to read out the entire array of potentially many 1000's of elements and uses approximately 10 wires between the cold stage and room temperature electronics. This can significantly reduce the complexity of the readout circuits.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 436-445; JPL-Publ-01-18
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    InP MMIC Chip Set for Power Sources Covering 80-170 GHz (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 477-484; JPL-Publ-01-18
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    A Low-Noise NbTiN Hot Electron Bolometer Mixer (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Hot electron bolometer (HEB) mixer elements, based on niobium titanium nitride (NbTiN) thin film technology, have been fabricated on crystalline quartz substrates over a 20 nm thick AlN buffer layer. The film was patterned by optical lithography, yielding bolometer elements that measure about 1 micrometer long and between 2 and 12 micrometers wide. These mixer chips were mounted in a fixed-tuned waveguide mixer block, and tested in the 600 and 800 GHz frequency range. The 3-dB output bandwidth of these mixers was determined to be about 2.5 GHz and we measured a receiver noise temperature of 270 K at 630 GHz using an intermediate frequency of 1.5 GHz. The receiver has excellent amplitude stability and the noise temperature measurements are highly repeatable. An 800 GHz receiver incorporating one of these mixer chips has recently been installed at the Sub-Millimeter Telescope in Arizona for field test and for astronomical observations.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 253-261; JPL-Publ-01-18
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    Nanoklystron: A Monolithic Tube Approach to THz Power Generation (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 81-90; JPL-Publ-01-18
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    Monolithic THz Frequency Multipliers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 297-309; JPL-Publ-01-18
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    Low Noise 1.2 THz SIS Receiver (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: We present the development of a low noise superconductor insulator superconductor (SIS) mixer for the 1.1 - 1.25 THz heterodyne receiver of FIRST space radiotelescope. The quasi-optical SIS mixer has two NbTiN/AlN/Nb junctions with critical current density 30 kA/sq cm. The individual junction area is close to 0.65 square micrometers. The SIS junctions are coupled to the optical input beam through a planar double slot antenna and a Si hyperhemispherical lens. The minimum DSB receiver noise temperature is 650 K, about 12 hv/k.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 21-22; JPL-Publ-01-18
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    Proceedings of the Twelfth International Symposium on Space Terahertz Technology (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: The Twelfth International Symposium on Space Terahertz Technology was held February 14-16, 2001 in San Diego, California, USA. This symposium was jointly sponsored by the National Aeronautics and Space Administration (NASA) and the Jet Propulsion Laboratory, California Institute of Technology. The symposium featured sixty nine presentations covering a wide variety of technical topics relevant to Terahertz Technology. The presentations can be divided into five broad technology areas: Hot Electron Bolometers, superconductor insulator superconductor (SIS) technology, local oscillator (LO) technology, Antennas and Measurements, and Direct Detectors. The symposium provides scientists, engineers, and researchers working in the terahertz technology and science fields to engineers their work and exchange ideas with colleagues.
    Keywords: Electronics and Electrical Engineering
    Type: JPL-Publ-01-18 , Twenlfth International Symposium on Space Terahertz Technology; Feb 14, 2001 - Feb 16, 2001; San Diego, CA; United States|Proceedings of the Twenlfth International Symposium on Space Terahertz Technology
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    Reduced T(sub c) Niobium Superconducting HEB Mixers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A reduction in the mixer noise is expected when using superconductors with a lower transition temperature (T(sub c)) since the thermal noise components of the mixer noise should scale with T(sub c). Also, the local oscillator (LO) power required for a diffusion-cooled device should decrease as T(sub c) when T(sub bath) 〈〈 T(sub c). We previously studied mixing in aluminum based hot-electron bolometers (HEBs) at microwave frequencies (approximately 30 GHz), and observed a significant improvement in noise performance, and a reduction in LO power as predicted. However, the bias voltage range over which good mixer performance was observed was approximately 5 - 10 microV. These devices are thus susceptible to saturation effects, in particular output saturation. In the present work, we have investigated Nb HEBs whose T(sub c) is lowered by applying a magnetic field. The goal is to study a case intermediate between Nb and Al, and hopefully to find properties that will allow use in practical receivers. A 15 kOe perpendicular magnetic field was applied to a Nb HEB (L = 0.16 micrometers, W = 0.08 micrometers, R(sub N) = 90 ohms) to reduce T(sub c) from 5.2 K to 2.4 K. The mixer noise, as inferred from the output noise and the conversion efficiency, decreased from 390 K, DSB to 171 K, DSB. The LO power required for near optimum mixer conversion efficiency (eta(sub mixer) = -9 dB in this device) was 8 nW in zero field, and approximately 2 nW when T(sub c) was reduced to 2.4 K. T(sub bath) = 0.22 K. The conversion bandwidth was previously measured to be 2.4 GHz and the same bandwidth was observed in the presence of a magnetic field. By lowering T(sub c), the voltage range over which good mixing was observed also decreased. However, even with T(sub c) reduced to 2.4 K, the conversion efficiency dropped by 3 dB from its maximum value only when the bias voltage was changed by approximately 90 microV. Saturation effects should thus be much less of a concern in these devices than in Al HEBS. In situations where the application of a large magnetic field is not feasible, we suggest using Ta based HEBS. Ta HEBs should have T(sub c) = 3 - 3.5 K and material properties very similar to Nb.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 36-41; JPL-Publ-01-18
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    A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (〈 4 V) and short duration (〈 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.
    Keywords: Electronics and Electrical Engineering
    Type: Non-Volatile Memory Technology Symposium 2001: Proceedings; 18-24; JPL-Publ-01-15
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    Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.
    Keywords: Electronics and Electrical Engineering
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    Opto-Electronic Oscillator Stabilized By A Hyperfine Atomic Transition (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Opto-electronic oscillator (OEO) is a closed-loop system with part of the loop is implemented by an optical beam, and the rest by RF circuitry. The technological advantage of this approach over traditional all-RF loops in the gigahertz range comes from the that frequency filtering can be done far more efficiently in the optical range with compact, low power, and have superior stability. In this work, we report our preliminary results on using the phenomenon of coherent population trapping in (87) Rb vapor as an optical filter. Such a filter allows us to stabilize the OEO at the hyperfine splitting frequency of rubidium, thus implementing a novel type of frequency standard.
    Keywords: Electronics and Electrical Engineering
    Type: AD-A427764 , 35th Annual Precise Time and Time Interval Meeting; Unknown
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    An Apparatus for Monitoring the Health of Electrical Cables (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: As with most elements of infrastructure, electrical wiring is innocuous; usually hidden away and unnoticed until it fails. Failure of infrastructure, however, sometimes leads to serious health and safety hazards. Electrical wiring fails when the polymeric (usually rubber) insulation material that sheathes the conductor gets embrittled with age from exposure to pressure, temperature or radiation cycling or when the insulation gets removed by the chafing of wires against each other. Miles of such wiring can be found in typical aircraft, with significant lengths of the wiring immersed in aviation fuel - a recipe for an explosion if a spark were to occur. Diagnosing the health of wiring is thus an important aspect of monitoring the health of aging aircraft. Stress wave propagation through wiring affords a quick and non-invasive method for health monitoring. The extent to which a stress wave propagating through the cable core gets attenuated depends on the condition of the surrounding insulation. When the insulation is in good condition - supple and pliable, there is more damping or attenuation of the waveform. As the insulation gets embrittled and cracked, the attenuation is likely to reduce and the waveform of the propagating stress wave is likely to change. The monitoring of these changes provides a potential tool to evaluate wiring or cabling in service that is not accessible for visual inspection. This experiment has been designed for use in an introductory mechanical or materials engineering instrumentation lab. Initial setup (after procuring all the materials) should take the lab instructor about 4 hours. A single measurement can be initiated and saved to disk in less than 3 minutes, allowing for all the students in a typical lab section to take their own data rather than share a single set of data for the entire class.
    Keywords: Electronics and Electrical Engineering
    Type: National Educators' Workshop: Update 2003. Standard Experiments in Engineering, Materials Science, and Technology, Part 1; 245-256; NASA/CP-2004-213243/PT1
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    Avalanche Photodiode Arrays for Optical Communications Receivers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.
    Keywords: Electronics and Electrical Engineering
    Type: JPL-TMO-PR-42-144
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    Magnetic Circuit Model of PM Motor-Generator to Predict Radial Forces (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: A magnetic circuit model is developed for a PM motor for flywheel applications. A sample motor is designed and modeled. Motor configuration and selection of materials is discussed, and the choice of winding configuration is described. A magnetic circuit model is described, which includes the stator back iron, rotor yoke, permanent magnets, air gaps and the stator teeth. Iterative solution of this model yields flux linkages, back EMF, torque, power, and radial force at the rotor caused by eccentricity. Calculated radial forces are then used to determine motor negative stiffness.
    Keywords: Electronics and Electrical Engineering
    Type: NASA/CR-2004-212620 , AIAA Paper 2003-6068 , E-14178 , First International Energy Conversion Engineering Conference; Aug 17, 2003 - Aug 21, 2003; Portsmouth, VA; United States
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    Method of Fabricating a Piezoelectric Composite Apparatus (2003)
    In:  CASI
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    Publication Date: 2019-08-13
    Description: A method for fabricating a piezoelectric macro-fiber composite actuator comprises providing a piezoelectric material that has two sides and attaching one side upon an adhesive backing sheet. The method further comprises slicing the piezoelectric material to provide a plurality of piezoelectric fibers in juxtaposition. A conductive film is then adhesively bonded to the other side of the piezoelectric material, and the adhesive backing sheet is removed. The conductive film has first and second conductive patterns formed thereon which are electrically isolated from one another and in electrical contact with the piezoelectric material. The first and second conductive patterns of the conductive film each have a plurality of electrodes to form a pattern of interdigitated electrodes. A second film is then bonded to the other side of the piezoelectric material. The second film may have a pair of conductive patterns similar to the conductive patterns of the first film.
    Keywords: Electronics and Electrical Engineering
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    Creating With Carbon (2003)
    In:  CASI
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    Publication Date: 2019-08-13
    Description: A subsidiary of SI Diamond Technology, Inc., Applied Nanotech, of Austin, Texas, is creating a buzz among various technology firms and venture capital groups interested in the company s progressive research on carbon-related field emission devices, including carbon nanotubes, filaments of pure carbon less than one ten-thousandth the width of human hair. Since their discovery in 1991, carbon nanotubes have gained considerable attention due to their unique physical properties. For example, a single perfect carbon nanotube can range from 10 to 100 times stronger than steel, per unit weight. Recent studies also indicate that the nanotubes may be the best heat-conducting material in existence. These properties, combined with the ease of growing thin films or nanotubes by a variety of deposition techniques, make the carbon-based material one of the most desirable for cold field emission cathodes.
    Keywords: Electronics and Electrical Engineering
    Type: Spinoff 2003: 100 Years of Powered Flight; 94-95; NASA/NP-2003-08-307-HQ
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    Progress in Low-Power Digital Microwave Radiometer Technologies (2004)
    In:  CASI
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    Publication Date: 2019-08-13
    Description: Three component technologies were combined into a digital correlation microwave radiometer. The radiometer comprises a dual-channel X-band superheterodyne receiver, low-power high-speed cross-correlator (HSCC), three-level ADCs, and a correlated noise source (CNS). The HSCC dissipates 10 mW and operates at 500 MHz clock speed. The ADCs are implemented using ECL components and dissipate more power than desired. Thus, a low-power ADC development is underway. The new ADCs arc predicted to dissipated less than 200 mW and operate at 1 GSps with 1.5 GHz of input bandwidth. The CNS provides different input correlation values for calibration of the radiometer. The correlation channel had a null offset of 0.0008. Test results indicate that the correlation channel can be calibrated with 0.09% error in gain.
    Keywords: Electronics and Electrical Engineering
    Type: NASA Earth Science Technology Conference; Unknown
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    Poster Session Presentation: Hardware Evolution of Control Electronics (2002)
    In:  CASI
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    Publication Date: 2019-08-13
    Description: This poster corresponding to a presentation explains a process for the evolution of both analog and digital circuits, which are examined experimentally for fitness.
    Keywords: Electronics and Electrical Engineering
    Type: 2002NASA/DOD Conference on Evolvable Hardware; Jul 15, 2002 - Jul 18, 2002; Alexandria, VA; United States
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    Polymer-Polymer Bilayer Actuator (2003)
    In:  CASI
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    Publication Date: 2019-08-13
    Description: A device for providing an electromechanical response includes two polymeric webs bonded to each other along their lengths. At least one polymeric web is activated upon application thereto of an electric field and exhibits electrostriction by rotation of polar graft moieties within the polymeric web. In one embodiment, one of the two polymeric webs in an active web upon application thereto of the electric field, and the other polymeric web is a non-active web upon application thereto of the electric field. In another embodiment, both of the two polymeric webs are capable of being active webs upon application thereto of the electric field. However, these two polymeric webs are alternately activated and non-activated by the electric field.
    Keywords: Electronics and Electrical Engineering
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    AEA Technologies Battery Cell By-pass Device Activation: An Update (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: The objectives are to: (1) Verify the Performance of AEA Cell Bypass Protection Device (CBPD) under simulated EOS-Aqua/Aura flight hardware configuration; (2) Assess the Safety of the hardware under an inadvertent firing of CBPD switch, as well as the closing of CBPD switch under simulated high cell impedance; and (3) Confirm that the mode of operation of CBPD switch is the formation of a continuous low impedance path (a homogeneous low melting point alloy).
    Keywords: Electronics and Electrical Engineering
    Type: 2001 NASA Aerospace Battery Workshop; Nov 27, 2001 - Nov 29, 2001; Huntsville, AL; United States
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    Response of Solid He-4 to External Stress: Interdigital Capacitor Solid Level Detector and Optical Interferometer (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: Two experiments are being conducted to observe the liquid/solid interface of He-4 near 1 K. Interesting instabilities are expected to occur when the solid is non-hydrostatically stressed. (1)A compact interdigital capacitor is used as a level detector to observe solid He-4 to which stresses are applied externally. The capacitor consists of 38 interlaced 50 m wide and 3.8 mm long gold films separated by 50 m and deposited onto a 5 mm by 5 mm sapphire substrate. The capacitor is placed on one flat end wall of a cylindrical chamber (xx mm diameter and xx mm long). The solid is grown to a known height and a stress is applied by a tubular PZT along the cylindrical axis. The observed small change in height of the solid at the wall is linearly proportional to the applied stress. The solid height decreases under compressive stress but does not change under tensile stress. The response of the solid on compressive stress is consistent with the expected quadratic dependence on strain. (2)Interferometric techniques are being developed for observing the solid He-4 surface profile. A laser light source is brought into the low temperature region via single mode optical fiber. The interference pattern is transmitted back out of the low temperature apparatus via optical fiber bundle. The solid He-4 growth chamber will be equipped with two PZT's such that stress can be applied from orthogonal directions. Orthogonally applied stress is expected to induce surface instability with island-like deformation on a grid pattern. Apparatus design and progress of its construction are described.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the 2003 NASA/JPL Workshop on Fundamental Physics in Space; 55-62; JPL-Pub-04-13
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    New Experiment to Measure the Electron Electric Dipole Moment (2003)
    In:  Other Sources
    Details
    Publication Date: 2019-08-13
    Description: An electron can possess an electric dipole moment (edm) only if time reversal symmetry (T) is violated. No edm of any particle has yet been discovered. CP-violation, equivalent to T-violation by the CPT theorem, does occur in Kaon decays and can be accounted for by the standard model. However, this mechanism leads to an electron edm d(sub e) of the order of 10(exp -38) e cm, whereas the current experimental bound on d(sub e) is about 10(exp -27) e cm. However, well-motivated extensions of the standard model such as supersymmetric theories do predict that de could be as large as the current bound. In addition, CP violation in the early universe is required to explain the preponderance of matter over anti-matter, but the exact mechanism of this CP violation is unclear. For these reasons, we are undertaking a new experimental program to determine de to an improved accuracy of 10(exp -29) e cm. Our experiment will use laser-cooled, trapped Cesium atoms to measure the atomic edm d(sub Cs) that occurs if d(sub e) is not zero. In order to do this, we will measure the energy splitting between the atoms spin states in parallel electric and magnetic fields. The signature of an edm would be a linear dependence of the splitting on the electric field E due to the interaction - d(sub Cs) dot E. Our measurement will be much more sensitive than previous measurements because atoms can be stored in the trap for tens of seconds, allowing for much narrower Zeeman resonance linewidths. Also, our method eliminates the most important systematic errors, proportional to atomic velocity, which have limited previous experiments. In this presentation, we will describe the design of our new apparatus, which is presently under construction. An important feature of our experimental apparatus is that magnetic field noise will be suppressed to a very low value of the order of 1 fT/(Hz)1/2. This requires careful attention to the Johnson noise currents in the chamber, which have not been important in previous experiments. In addition we will present estimates of the limits of the various errors that we expect for our experiment.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the 2003 NASA/JPL Workshop on Fundamental Physics in Space; JPL-Pub-04-13
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    Science Goals of the Primary Atomic Reference Clock in Space (PARCS) Experiment (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: The PARCS (Primary Atomic Reference Clock in Space) experiment will use a laser-cooled Cesium atomic clock operating in the microgravity environment aboard the International Space Station (ISS) to provide both advanced tests of gravitational theory and to demonstrate a new cold-atom clock technology for space. PARCS is a joint project of the National Institute of Standards and Technology (NIST), NASA's Jet Propulsion Laboratory (JPL), and the University of Colorado (CU). This paper concentrates on the scientific goals of the PARCS mission. The microgravity space environment allows laser-cooled Cs atoms to have Ramsey times in excess of those feasible on Earth, resulting in improved clock performance. Clock stabilities of 5x10(exp -14) at one second, and accuracies better than 10(exp -16) are projected.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the 2003 NASA/JPL Workshop on Fundamental Physics in Space; 2-24; JPL-Pub-04-13
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    Microwave Cavity Clocks On Space Station (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: We describe the status of a microwave cavity clock experiment to perform improved tests of Local Position Invariance and Lorentz Invariance on the International Space Station in conjunction with atomic clocks. Significant improvements over present bounds are expected in both cases. The oscillators can also be used to enhance the performance of atomic clocks at short time scales for other experiments.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the 2003 NASA/JPL Workshop on Fundamental Physics in Space; JPL-Pub-04-13
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    A Bright Idea for the Eyes (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: The WEstinghouse Lighting Corporation's Eye Saver[TM] Easy Reading Light Bulb is the result of collaboration between Westinghouse, Marshall Research LLC, and NASA's Space Optics Manufacturing Technology Center at Marshall Space Flight Center. The light bulb contains a chrome top that directs light to areas where it is needed most. The bulb, which lasts 2,000 hours, provides 40 percent more surface illumination on work and reading surfaces, compared to a standard incandescent bulb. The lightly frosted finish reduces glare, which helps to reduce eyestrain. The bulb is particularly helpful for people with low vision and eye diseases such as macular degeneration.
    Keywords: Electronics and Electrical Engineering
    Type: Spinoff; 9-10; NASA/NP-2004-10-374-HQ
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    Performance of the NASA Digitizing Core-Loss Instrumentation (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: The standard method of magnetic core loss measurement was implemented on a high frequency digitizing oscilloscope in order to explore the limits to accuracy when characterizing high Q cores at frequencies up to 1 MHz. This method computes core loss from the cycle mean of the product of the exciting current in a primary winding and induced voltage in a separate flux sensing winding. It is pointed out that just 20 percent accuracy for a Q of 100 core material requires a phase angle accuracy of 0.1 between the voltage and current measurements. Experiment shows that at 1 MHz, even high quality, high frequency current sensing transformers can introduce phase errors of a degree or more. Due to the fact that the Q of some quasilinear core materials can exceed 300 at frequencies below 100 kHz, phase angle errors can be a problem even at 50 kHz. Hence great care is necessary with current sensing and ground loops when measuring high Q cores. Best high frequency current sensing accuracy was obtained from a fabricated 0.1-ohm coaxial resistor, differentially sensed. Sample high frequency core loss data taken with the setup for a permeability-14 MPP core is presented.
    Keywords: Electronics and Electrical Engineering
    Type: NASA/CR-2003-212545 , E-14111 , NAS 1.26:212545 , AIAA Paper 2003-5972 , First International Energy Conversion Engineering Conference; Aug 17, 2003 - Aug 21, 2003; Portsmouth, VA; United States
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    Synchronized Electronic Shutter System and Method for Thermal Nondestructive Evaluation (2004)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: The invention is a synchronized electronic shutter system (SESS) and method for same side and through transmission thermal analysis and inspection of a material for finding defects, corrosion, disbond defects, integrity of a weld and determination of paint thickness. The system comprises an infrared detector that acquires background images of the sample. A shutter then covers the detector and lamps rapidly heat the sample above ambient temperature. Shutters cover all lamps at the same time the shutter over the infrared detector is opened. The infrared detector acquires a series of temperature images over time radiated from the sample a s the sample cools down. After collecting a series of temperature images taken by the SESS, a processed image is developed using one of the group comprising time derivative calculation, temperature normalization data reduction routine, thermal diffusivity curve fitting and averaging the series of temperature images.
    Keywords: Electronics and Electrical Engineering
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    NiH2 Cycle Life Study (2002)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: Cycle life studies have been performed at Eagle Picher Technologies (EPT), on HST Mantech design cells with various pedigrees of slurry and dry sinter processed electrodes, to evaluate peak load voltage performance during generic load profile testing. These tests provide information for determining voltage and capacity fade (degradation) mechanisms, and their impact on nickel hydrogen cell cycle life. Comparison of peak load voltage fade, as a function of State of Charge and cycle life, with capacity data from HST indicates that the cycle life limiting mechanism is due to impedance growth, and formation of a second discharge plateau. With a second plateau on discharge, capacity from the cell is still available, but at an unacceptable low voltage of 0.8 V per cell (17.6 V battery). Data shows that cell impedance increases with cycle number and depth of discharge, as expected.
    Keywords: Electronics and Electrical Engineering
    Type: 2002 NASA Aerospace Battery Workshop; Nov 19, 2002 - Nov 21, 2002; Huntsville, AL; United States
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    Non-Volatile Memory Technology Symposium 2000: Proceedings (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2000 that was held on November 15-16, 2000 in Arlington, Virginia. The proceedings contains a wide range of papers that cover the presentations of myriad advances in the nonvolatile memory technology during the recent past including memory cell design, simulations, radiation environment, and emerging memory technologies. The papers presented in the proceedings address the design challenges and applications and deals with newer, emerging memory technologies as well as related issues of radiation environment and die packaging.
    Keywords: Electronics and Electrical Engineering
    Type: JPL-Publ-00-15 , Non-Volatile Memory Technology Symposium 2000; Nov 15, 2000 - Nov 16, 2000; Arlington, VA; United States
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    Design, Build and Qualification of 28 Volt Lithium-Ion battery (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: Contents include the following: 1. GSFC performance specifications requirements. 2. AEA philosophy: battery configuration. 3. AEA battery design: SONY cell, cell screening, 20Ah and 60Ah. 4. Testing: 20Ah battery qualification (environmental); 60Ah battery LEO life cycle. 5. Conclusion.: summary and lessons learned.
    Keywords: Electronics and Electrical Engineering
    Type: 2003 NASA Aerospace Battery Workshop; Nov 18, 2003 - Nov 20, 2003; Huntsville, AL; United States
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    Leak and Pipe Detection Method and System (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: A method and system for locating leaks of conductive fluids from non-conductive pipes and other structures or for locat- ing non-conductive pipes or structures having conductive fluid contained therein, employ a charge generator to apply a time varying charge to the conductive fluid, and a capaci- tive type detector that can detect the variable charge that is induced in the fluid. The capacitive detector, which prefer- ably includes a handheld housing, employs a large conduc- tive pickup plate that is used to locate the pipe or leak by scanning the plate over the ground and detecting the induced charge that is generated when the plate comes in close proximity to the pipe or leak. If a leak is encountered, the resulting signal will appear over an area larger than expected for a buried pipe, assuming the leak provides an electrically conductive path between the flow and the wet surrounding ground. The detector uses any suitable type of indicator device, such as a pair of headphones that enable an operator to hear the detected signal as a chirping sound, for example.
    Keywords: Electronics and Electrical Engineering
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    200 Deg C Demonstration Transformer Operates Efficiently at 50 kHz (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: A compact, high temperature demonstration transformer was constructed, using a moly permalloy powder core and Teflon -insulated copper wire. At 50 kHz and 200 C, this 1:2 ratio transformer is capable of 98 percent efficiency when operating at a specific power of 6.1 kW/kg at 4 kW. This roughly 7 cm diameter transformer has a mass of 0.65 kg. Although Teflon is unstable above 200 C, about the same electrical performance was seen at 250 C. A plot of winding loss versus frequency illustrates the need to control these losses at high frequency.
    Keywords: Electronics and Electrical Engineering
    Type: NASA/CR-2003-212524 , AIAA Paper 2003-6004 , E-14086 , NAS 1.26:212524 , First International Energy Conversion Engineering Conference; Aug 17, 2003 - Aug 21, 2003; Portsmouth, VA; United States
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    Multiplying Electrons With Diamond (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: As researchers in the Space Communications Division of NASA s Glenn Research Center in 1992, Dr. Gerald Mearini, Dr. Isay Krainsky, and Dr. James Dayton made a secondary electron emission discovery that became the foundation for Mearini s company, GENVAC AeroSpace Corporation. Even after Mearini departed Glenn, then known as Lewis Research Center, his contact with NASA remained strong as he was awarded Small Business Innovation Research (SBIR) contracts to further develop his work. Mearini s work for NASA began with the investigation of diamond as a material for the suppression of secondary electron emissions. The results of his research were the opposite of what was expected diamond proved to be an excellent emitter rather than absorber. Mearini, Krainsky, and Dayton discovered that laboratory-grown diamond films can produce up to 45 electrons from a single incident electron. Having built an electron multiplier prototype at NASA, Mearini decided to start his own company to develop diamond structures usable in electron beam devices.
    Keywords: Electronics and Electrical Engineering
    Type: Spinoff 2003: 100 Years of Powered Flight; 84; NASA/NP-2003-08-307-HQ
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    Remote Transmission at High Speed (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: Omni and NASA Test Operations at Stennis entered a Dual-Use Agreement to develop the FOTR-125, a 125 megabit-per-second fiber-optic transceiver that allows accurate digital recordings over a great distance. The transceiver s fiber-optic link can be as long as 25 kilometers. This makes it much longer than the standard coaxial link, which can be no longer than 50 meters.The FOTR-125 utilizes laser diode transmitter modules and integrated receivers for the optical interface. Two transmitters and two receivers are employed at each end of the link with automatic or manual switchover to maximize the reliability of the communications link. NASA uses the transceiver in Stennis High-Speed Data Acquisition System (HSDAS). The HSDAS consists of several identical systems installed on the Center s test stands to process all high-speed data related to its propulsion test programs. These transceivers allow the recorder and HSDAS controls to be located in the Test Control Center in a remote location while the digitizer is located on the test stand.
    Keywords: Electronics and Electrical Engineering
    Type: Spinoff 2003: 100 Years of Powered Flight; 87; NASA/NP-2003-08-307-HQ
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    Intrinsic Hardware Evolution for the Design and Reconfiguration of Analog Speed Controllers for a DC Motor (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: Evolvable hardware provides the capability to evolve analog circuits to produce amplifier and filter functions. Conventional analog controller designs employ these same functions. Analog controllers for the control of the shaft speed of a DC motor are evolved on an evolvable hardware platform utilizing a second generation Field Programmable Transistor Array (FPTA2). The performance of an evolved controller is compared to that of a conventional proportional-integral (PI) controller. It is shown that hardware evolution is able to create a compact design that provides good performance, while using considerably less functional electronic components than the conventional design. Additionally, the use of hardware evolution to provide fault tolerance by reconfiguring the design is explored. Experimental results are presented showing that significant recovery of capability can be made in the face of damaging induced faults.
    Keywords: Electronics and Electrical Engineering
    Type: 2003 NASA/DoD Conference on Evolvable Hardware; Jul 09, 2003 - Jul 11, 2003; Chicago, IL; United States
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    Hardware Evolution of Control Electronics (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: The evolution of closed-loop motor speed controllers implemented on the JPL FPTA2 is presented. The response of evolved controller to sinusoidal commands, controller reconfiguration for fault tolerance,and hardware evolution are described.
    Keywords: Electronics and Electrical Engineering
    Type: 2003 NASA/DoD Conference on Evolvable Hardware; Jul 09, 2003 - Jul 11, 2003; Chicago, IL; United States
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    Structure of Thin-Film Lithium Microbatteries (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiC(0)O2, on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof. The batteries produced by the above process are disclosed.
    Keywords: Electronics and Electrical Engineering
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    Evolutionary Technique for Automated Synthesis of Electronic Circuits (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: A method for evolving a circuit comprising configuring a plurality of transistors using a plurality of reconfigurable switches so that each of the plurality of transistors has a terminal coupled to a terminal of another of the plurality of transistors that is controllable by a single reconfigurable switch. The plurality of reconfigurable switches being controlled in response to a chromosome pattern. The plurality of reconfigurable switches may be controlled using an annealing function. As such, the plurality of reconfigurable switches may be controlled by selecting qualitative values for the plurality of reconfigurable switches in response to the chromosomal pattern, selecting initial quantitative values for the selected qualitative values, and morphing the initial quantitative values. Typically, subsequent quantitative values will be selected more divergent than the initial quantitative values. The morphing process may continue to partially or to completely polarize the quantitative values.
    Keywords: Electronics and Electrical Engineering
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    An Evaluation of Electronic Nose for Space Program Applications (2003)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: The ability to monitor air contaminants in the Shuttle and the International Space Station is important to ensure the health and safety of astronauts. Three specific space applications have been identified that would benefit from a chemical monitor: organic contaminants in crew cabins, propellant contaminants in the airlock, and pre-combustion fire detection. NASA has assessed several commercial and developing electronic noses (e-noses) for these applications. A preliminary series of tests identified those e-noses that exhibited sufficient sensitivity to the vapors of interest. These e-noses were further tested to assess their ability to identify vapors, and in-house software has been developed to enhance identification. This paper describes the tests, the classification ability of selected e-noses, and the software improvements made to meet the requirements for these space program applications.
    Keywords: Electronics and Electrical Engineering
    Type: KSC-2003-038 , JANNAF Conference; Mar 25, 2003 - Mar 27, 2003; Charlottesville, VA; United States
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    Preliminary Results of Field Emission Cathode Tests (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: Preliminary screening tests of field emission cathodes such as chemical vapor deposited (CVD) diamond, textured pyrolytic graphite, and textured copper were conducted at background pressures typical of electric thruster test facilities to assess cathode performance and stability. Very low power electric thrusters which provide tens to hundreds micronewtons of thrust may need field emission neutralizers that have a capability of tens to hundreds of microamperes. From current voltage characteristics, it was found that the CVD diamond and textured metals cathodes clearly satisfied the Fowler-Nordheim emission relation. The CVD diamond and a textured copper cathode had average current densities of 270 and 380 mA/sq cm, respectively, at the beginning-of-life. After a few hours of operation the cathode emission currents degraded by 40 to 75% at background pressures in the 10(exp -5) Pa to 10(exp -4) Pa range. The textured pyrolytic graphite had a modest current density at beginning-of-life of 84 mA/sq cm, but this cathode was the most stable of all. Extended testing of the most promising cathodes is warranted to determine if current degradation is a burn-in effect or whether it is a long-term degradation process. Preliminary experiments with ferroelectric emission cathodes, which are ceramics with spontaneous electric polarization, were conducted. Peak current densities of 30 to 120 mA/sq cm were obtained for pulse durations of about 500 ns in the 10(exp -4) Pa pressure range.
    Keywords: Electronics and Electrical Engineering
    Type: NASA/TM-2001-211318 , E-13129 , NAS 1.15:211318 , IEPC-01-280 , 27th International Electric Propulsion Conference; Oct 14, 2001 - Oct 19, 2001; Pasadena, CA; United States
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    600 C Logic Gates Using Silicon Carbide JFET's (2000)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: Complex electronics and sensors are increasingly being relied on to enhance the capabilities and efficiency of modernjet aircraft. Some of these electronics and sensors monitor and control vital engine components and aerosurfaces that operate at high temperatures above 300 C. However, since today's silicon-based electronics technology cannot function at such high temperatures, these electronics must reside in environmentally controlled areas. This necessitates either the use of long wire runs between sheltered electronics and hot-area sensors and controls, or the fuel cooling of electronics and sensors located in high-temperature areas. Both of these low-temperature-electronics approaches suffer from serious drawbacks in terms of increased weight, decreased fuel efficiency, and reduction of aircraft reliability. A family of high-temperature electronics and sensors that could function in hot areas would enable substantial aircraft performance gains. Especially since, in the future, some turbine-engine electronics may need to function at temperatures as high as 600 C. This paper reports the fabrication and demonstration of the first semiconductor digital logic gates ever to function at 600 C. Key obstacles blocking the realization of useful 600 C turbine engine integrated sensor and control electronics are outlined.
    Keywords: Electronics and Electrical Engineering
    Type: NASA/TM-2000-209928 , E-12172 , NAS 1.15:209928 , Government Microcircuit Applications; Mar 20, 2000 - Mar 24, 2000; Anaheim, CA; United States
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