ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Masthead (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010101
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Excimer laser projection etching of copper foils in chlorine gas (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 51-57 
    Details
    ISSN: 1057-9257
    Keywords: Copper ; Etching ; Excimer ; Laser ; Chlorine ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Low-fluence XeCl laser etching of copper foils in a chlorine environment has been studied. The etch rate is fluence-dependent in the range 0.05-1.0 J cm-2 and is governed by the growth characteristics of the chloride layer formed in the interpulse period. Projection etching with good pattern reproduction and resolution for high-aspect-ratio features is demonstrated.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010202
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Hole transport in p-diethylamino-benzaldehyde-diphenyl hydrazone (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 73-80 
    Details
    ISSN: 1057-9257
    Keywords: Disorder formalism ; Hole transport ; p-diethylamino-benzaldehyde-diphenyl hydrazone ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Hole mobilities have been measured in vapour-deposited films of p-diethylamino-benzaldehyde-diphenyl hydrazone (DEH). The results are described by a model based on hopping through a manifold of sites broadened by energetic and positional disorder. The application of the model leads to the conclusion that the width of the density of hopping states is influenced by dipolar disorder due to dipole moments of the DEH molecules. In comparing the results with those observed in other molecular solids, the degree of positional disorder is shown to be relatively small.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010205
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Theory of molecular optoelectronics. X: Calculations for MBANP and NMBA (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 65-71 
    Details
    ISSN: 1057-9257
    Keywords: Optoelectronics ; Non-linear optics ; Molecular crystals ; Polarizability ; Hyperpolarizability ; Local field ; Dipole interactions ; MBANP ; NMBA ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Components of the crystal quadratic susceptibility tensor x(2) for second-harmonic generation are calculated for the title compounds 2-(α-methyl benzylamino)-5-nitropyridine (MBANP) and 4-nitro-4'-methyl(benzylidene aniline) (NMBA). Input data are the crystal structure and refractive indices and CNDO hyperpolarizabilities. The calculations also yield effective polarisabilities and local electric fields. Susceptibility components reach 66 pm V-1 in MBANP and 27 pm V-1 in NMBA in the crystal axes; agreement with experiment is poor for MBANP but satisfactory for NMBA. These features seem to reflect the better defined charge transfer axis in NMBA. Screened dipole-dipole interactions calculated from CNDO dipole moments stabilise MBANP by 70 kJ mol-1 and NMBA by 20 kJ mol-1 and imply permanent electric fields of a few GV m-1.
    Additional Material: 12 Tab.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010204
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Metal sulphide thin film photography with lead sulphide thin films (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 139-145 
    Details
    ISSN: 1057-9257
    Keywords: Thin film ; Metal sulphide ; Photography ; Lead sulphide ; MSTF ; Photo-accelerated ; chemical deposition ; Solar irradiation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Metal sulphide thin film (MSTF) photography based on photo-accelerated chemical deposition (PACD) of PbS thin films is described. Here an intensity distribution over the surface of a growing PbS thin film produces a thickness variation (0.06-0.15 μm) of the film which, when viewed under daylight, yields a specularly reflective image. Under 800 W m-2 of solar radiation a bluish MSTF photographic image (0.15 μm film thickness) on a coppery-bronze background (0.08 μm) is obtained in the PACD of PbS at the end of 25 min deposition when a high-contrast photographic negative is used as the object. The best contrast of 0.46 in the PbS MSTF photography in the reflection mode is obtained under the above condition of exposure when the optical transmission in a photographic negative in the image area is ∽30% and that in the background is ∽1%. The contrast available in the transmission mode in the MSTF photographic image is considerably less: ∽0.28 (maximum) for optical transmission of 1% and 100% in the background and image areas of the photographic negative respectively.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010307
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    The characterisation of GaAs on silicon using polarised laser light (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 189-195 
    Details
    ISSN: 1057-9257
    Keywords: Ellipsometry ; GaAs ; Silicon ; Surface roughness ; MBE ; SEM ; Rotating polariser multiple-angle-of-incidence ellipsometer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: MBE-grown gallium arsenide epitaxial layers on silicon, with thicknesses between 0.1 and 8.1 μm, have been studied using a simple rotating polariser multiple-angle-of-incidence ellipsometer. From these data, information on the roughness of the surfaces of the layers and the anisotropy of the refractive index of the layers has been obtained. The results are compared with data obtained on the same samples using scanning electron microscopy and conventional spectroscopic ellipsometry.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010405
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Peculiarities of silicon carbide crystal growth under the diffusion mechanism of vapour transfer (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 203-207 
    Details
    ISSN: 1057-9257
    Keywords: Growth ; Silicon carbide ; Monocrystals ; Vapour phase ; Diffusion ; Supersaturation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In the present work the gas dynamics in the growth zone of SiC crystals is investigated. It is shown that the propagation of SiC vapour from the growth cavity walls towards the lids is effected by diffusion. On this basis the calculation of the concentration distribution of SiC vapour (n), the equilibrium vapour concentration (ns) and the supersaturation (α = [(n - ns)/ns] × 100%) in the crystal growth zone at different radial and axial gradients is carried out by solving the Laplace equation in cylindrical co-ordinates for a stationary case corresponding to the conditions of crystal growth. The results obtained are compared with the available experimental data, which gives the possibility of explaining some of the observed peculiarities during SiC crystal growth from the vapour phase by the sublimation method.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010407
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Metal-Organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 229-233 
    Details
    ISSN: 1057-9257
    Keywords: Indium sulphide ; Metal-organic chemical vapour deposition ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The dimeric indium thiolate [(tBu)2In(μ-StBu)]2 has been used as a single-source precursor for the metal-organic chemical vapour deposition (MOCVD) of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the non-equilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy-dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS).
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010504
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Ultralow-Dielectric-Constant foams by crystallisation from supercritical solution: Application to advanced electronic packaging (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 249-253 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Accurate moulding of polymer foams of density 0.02-0.3 g cm-3 has been achieved by crystallising polyethylene and ethylene/methlacrylate copolymers from dry supercritical solutions. Adherent thick films can be sealed to electronic substrates and are proposed as insulating layers for interconnections on multichip modules and other high-speed electronic devices. The dielectric constant achieved for films of several-mil thickness is between 1.05 and 1.3 and can be tailored along with the physical properties of the film by adjusting the density and composition of the copolymer. Planarisation or complex patterning is possible by detailing the mould.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010507
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    L. L. Hench and J. K. West. Chemical processing of advanced materials, Wiley-Interscience, New York, 1992, 1048 pp. (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 149-149 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020308
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...