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  • Articles  (409)
  • Polymer and Materials Science  (409)
  • Electrical Engineering, Measurement and Control Technology  (409)
  • 1
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 65-71 
    ISSN: 1057-9257
    Keywords: Optoelectronics ; Non-linear optics ; Molecular crystals ; Polarizability ; Hyperpolarizability ; Local field ; Dipole interactions ; MBANP ; NMBA ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Components of the crystal quadratic susceptibility tensor x(2) for second-harmonic generation are calculated for the title compounds 2-(α-methyl benzylamino)-5-nitropyridine (MBANP) and 4-nitro-4'-methyl(benzylidene aniline) (NMBA). Input data are the crystal structure and refractive indices and CNDO hyperpolarizabilities. The calculations also yield effective polarisabilities and local electric fields. Susceptibility components reach 66 pm V-1 in MBANP and 27 pm V-1 in NMBA in the crystal axes; agreement with experiment is poor for MBANP but satisfactory for NMBA. These features seem to reflect the better defined charge transfer axis in NMBA. Screened dipole-dipole interactions calculated from CNDO dipole moments stabilise MBANP by 70 kJ mol-1 and NMBA by 20 kJ mol-1 and imply permanent electric fields of a few GV m-1.
    Additional Material: 12 Tab.
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  • 2
    ISSN: 1057-9257
    Keywords: High Tc superconductors ; Precursors ; Copper ; Calcium ; Barium ; Yttrium ; Strontium ; Fluorinated β-dikeonates ; Ethanol ; Tetradecafluorononanedione ; Decafluoroheptanedione ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The new β-diketone 1,1,1,2,2,3,3,7,7,8,8,9,9,9-tetradecafluorononane-4,6-dione (HTDFND) has been prepared and employed in the formation of complexes of Cu, Ca, Sr, Ba and Y. Complexes of the same metals derived from the β-diketone 1,1,1,2,2,3,3,7,7,7-decafluoroheptane-2,4-dione (HDFHD) have also been prepared. In general the compounds have the formula [M(TDFND)2H2O] or [M(DHFD)2H2O], although the yttrium complexes are [Y(β-diket)3] · xH2O (β-diket ≡ TDFND (x = 3) or DFHD (x = 2)). The complexes have been characterised by analytical and spectroscopic means and by a crystal structure of [Cu(TDFND)2EtOH] obtained by recrystallisation of [Cu(TDFND)2H2O] from aqueous ethanol. Crystal data for [Cu(TDFND)2EtOH]: triclinic, P̄1, a = 11.249(4) Å, b = 12.331 (2) Å, c = 12.890(2) Å, α = 96.89(2)°, β = 108.93(3)°, γ = 109.63(3)°, V = 1541.54 Å3, Z = 2. The complex is square pyramidal with the four oxygen atoms of the β-diketonates occupying the basal sites and the oxygen atom of the co-ordinated ethanol molecule in the apical position. The C3F7 ligands take up an extended staggered configuration in order to minimise steric repulsions. The complex is monomeric with intermolecular distances all greater than 4 Å. Simultaneous thermal analysis at 1 atm reveals that all the compounds lose water but then sublime, usually completely without decomposition. [Ba(TDFND)2H2O] is the first barium complex for which this is the case and it can be dehydrated to give [Ba(TDFND)2], which is also volatile but becomes less volatile with time. [Ba(TDFND)2H2O], [Sr(TDFND)2H2O] and [Ca(DFHD)2H2O] are suitable precursors for the growth of MF2 on silicon substrates. Complete orientation in the (111) direction is observed. Changes in the film growth rate with time for all the precursors are attributed to sample decomposition ([M(DFHD)2H2O], M ≡ Ca or Sr) or to slow reorganisation of the crystal structure ([Ba(TDFND)2H2O]). Layers with Y:Ba:Cu ratios close to the required 1:2:3 have been grown using [Y(DPM)3], [Cu(DPM)2] and [Ba(DFHD)2H2O] (DPM ≡ 2,2,6,6-tetramethylheptane-3,5-dionato).
    Additional Material: 6 Ill.
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 139-145 
    ISSN: 1057-9257
    Keywords: Thin film ; Metal sulphide ; Photography ; Lead sulphide ; MSTF ; Photo-accelerated ; chemical deposition ; Solar irradiation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Metal sulphide thin film (MSTF) photography based on photo-accelerated chemical deposition (PACD) of PbS thin films is described. Here an intensity distribution over the surface of a growing PbS thin film produces a thickness variation (0.06-0.15 μm) of the film which, when viewed under daylight, yields a specularly reflective image. Under 800 W m-2 of solar radiation a bluish MSTF photographic image (0.15 μm film thickness) on a coppery-bronze background (0.08 μm) is obtained in the PACD of PbS at the end of 25 min deposition when a high-contrast photographic negative is used as the object. The best contrast of 0.46 in the PbS MSTF photography in the reflection mode is obtained under the above condition of exposure when the optical transmission in a photographic negative in the image area is ∽30% and that in the background is ∽1%. The contrast available in the transmission mode in the MSTF photographic image is considerably less: ∽0.28 (maximum) for optical transmission of 1% and 100% in the background and image areas of the photographic negative respectively.
    Additional Material: 9 Ill.
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  • 4
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 189-195 
    ISSN: 1057-9257
    Keywords: Ellipsometry ; GaAs ; Silicon ; Surface roughness ; MBE ; SEM ; Rotating polariser multiple-angle-of-incidence ellipsometer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: MBE-grown gallium arsenide epitaxial layers on silicon, with thicknesses between 0.1 and 8.1 μm, have been studied using a simple rotating polariser multiple-angle-of-incidence ellipsometer. From these data, information on the roughness of the surfaces of the layers and the anisotropy of the refractive index of the layers has been obtained. The results are compared with data obtained on the same samples using scanning electron microscopy and conventional spectroscopic ellipsometry.
    Additional Material: 6 Ill.
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  • 5
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 203-207 
    ISSN: 1057-9257
    Keywords: Growth ; Silicon carbide ; Monocrystals ; Vapour phase ; Diffusion ; Supersaturation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In the present work the gas dynamics in the growth zone of SiC crystals is investigated. It is shown that the propagation of SiC vapour from the growth cavity walls towards the lids is effected by diffusion. On this basis the calculation of the concentration distribution of SiC vapour (n), the equilibrium vapour concentration (ns) and the supersaturation (α = [(n - ns)/ns] × 100%) in the crystal growth zone at different radial and axial gradients is carried out by solving the Laplace equation in cylindrical co-ordinates for a stationary case corresponding to the conditions of crystal growth. The results obtained are compared with the available experimental data, which gives the possibility of explaining some of the observed peculiarities during SiC crystal growth from the vapour phase by the sublimation method.
    Additional Material: 6 Ill.
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  • 6
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 229-233 
    ISSN: 1057-9257
    Keywords: Indium sulphide ; Metal-organic chemical vapour deposition ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The dimeric indium thiolate [(tBu)2In(μ-StBu)]2 has been used as a single-source precursor for the metal-organic chemical vapour deposition (MOCVD) of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the non-equilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy-dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS).
    Additional Material: 3 Ill.
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  • 7
    ISSN: 1057-9257
    Keywords: Monolayers ; Langmuir-Blodgett technique ; Bacteriorhodopsin ; Halobacteria ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Organised films containing oriented patches of purple membranes and consisting of 15-75 layers and approximately 1000 layers were fabricated by the Langmuir-Blodgett and electrophoretic sedimentation techniques respectively. ‘Surface pressure vs. molecular area’ isotherms for monolayers of purple membranes suspended in hexane and deposited on the air/water interface were studied. Circular dichroism and absorption spectroscopy were used to investigate the effect of an organic solvent on the chromophore binding site in the purple membranes. Kinetic methods based on flash excitation were employed to determine the influence of the film deposition conditions on the photoelectric response of bacteriorhodopsin and on the M412 intermediate relaxation. Structural characteristics for multilayers prepared from water and hexane purple membrane suspensions were determined by low-angle X-ray scattering. The influence of the layer deposition conditions on the electrical, physical and photoelectrical properties of ordered structures containing bacteriorhodopsin is discussed.
    Additional Material: 7 Ill.
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  • 8
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 127-132 
    ISSN: 1057-9257
    Keywords: α-sexithienyl ; field effect transistor ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A field effect transistor (FET) has been fabricated with the hexamer of thiophene (α-sexithienyl) in order to assess the performance of such electronic devices based on an organic material. Particular emphasis has been given to the determination of the origin of the instability in the electrical performance. From this study it is confirmed that charged species, possibly chemical impurities present in the processed material, can migrate through the film under an applied electric field, even at room temperature.
    Additional Material: 7 Ill.
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  • 9
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 147-158 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Molecular three-centre electron transfer (ET) systems contain an intermediate electronic bridge group state in addition to the donor and acceptor states. This feature is encountered in long-range ET patterns of metalloproteins, in bacterial photosynthetic reaction centres, in electrochemical processes at modified metal electrodes and in hypothetical or real molecular shift register and photodiode device-like systems. Overall ET is by superexchange when the intermediate group energy is high. When the energy is low enough that the state is temporarily populated, a range of vibrational features arise depending on the vibrational coupling and relaxation time of the intermediate state. In external fields these properties induce characteristic ‘switch’ effects reflected in rapid changes in the current derivatives and other features in the current-voltage relations. We provide a quantum mechanical frame for three-centre ET in such molecular systems. The theory rests on second-order perturbation theory. In contrast to most applications of superexchange concepts, the theory includes explicitly nuclear coupling in the intermediate state and is valid both for high energy superexchange and for low-energy populated intermediate states. Moreover, mild, finite resonances arise in the transition regions between the various energy ranges represented by analytical rate constants. The theory is appropriate to the molecular electronic behaviour of several biological and synthetic three-level ‘switch’ ET systems.
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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