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  • Articles  (122)
  • 61.80  (122)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (122)
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  • Articles  (122)
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  • 1
    Electronic Resource
    Electronic Resource
    In-depth concentration profiling of garnet epilayers using secondary ion mass spectrometry (1977)
    Springer
    Applied physics 12 (1977), S. 283-286 
    Details
    ISSN: 1432-0630
    Keywords: 07 ; 61.80 ; 68.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rapid and reliable SIMS profiling of insulators can be achieved by using negative primary ions and a diaphragm placed on the specimen for charge compensation. Results with garnet LPE layers demonstrate the compositional variations arising from non-steady state growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00915203
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  • 2
    Electronic Resource
    Electronic Resource
    The investigation of radiation damage by electron beam absorption measurements (1978)
    Springer
    Applied physics 16 (1978), S. 339-343 
    Details
    ISSN: 1432-0630
    Keywords: 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Radiation damage in silicon was investigated by monitoring the absorbed sample current in a scanning electron microscope. The existence of different types of damage after implantation of light or heavy ions, respectively, could be revealed by plotting the change in sample current at the implantation boundary versus beam voltage. Results are explained by considering the yield and the anisotropy of electron backscattering in the presence of either small isolated defects or extended damaged zones. Applications of the new method are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885857
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  • 3
    Electronic Resource
    Electronic Resource
    Propagation of ultrasonic shear waves in γ-ray irradiated quartz crystals (1977)
    Springer
    Applied physics 13 (1977), S. 171-173 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 62
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrasonic pulsed-echo patterns in AC-cut quartz crystals cooled to 4.2 K have been studied over the frequency range 0.2〈f〈0.6 [GHz]. The observed beats, superimposed on the exponential decay, have been identified as resulting from diffraction of the waves in the finite-size crystals. Furthermore, it has been found that irradiation with 1 MeV γ-rays yields samples with both a smaller attenuation constant and less pronounced beats. The significance of the reported results lies mainly in the potential application of the procedure of γ-ray irradiation, and subsequent bleaching with ultraviolet light, in order to obtain quartz crystals with improved acoustic patterns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882477
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  • 4
    Electronic Resource
    Electronic Resource
    Lasing properties of some metal complexes of compounds containing the methyleneiminobisacetic acid group (1977)
    Springer
    Applied physics 13 (1977), S. 287-290 
    Details
    ISSN: 1432-0630
    Keywords: 78.60 ; 61.80 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Aqueous solutions of some fluorescent metal complexes of three compounds containing the methyleneiminobisacetic acid group have been found to show lasing when tested on a pulsed nitrogen laser. Degradation constants for lasing of one of the complexes and of the corresponding uncomplexed dye have been determined by coaxial flashlamp pumping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882894
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  • 5
    Electronic Resource
    Electronic Resource
    Laser induced reorder in Pb implanted Ge (1980)
    Springer
    Applied physics 22 (1980), S. 201-203 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ge samples implanted with 40 keV Pb at a fluence of 3×1015/cm2 were irradiated with ruby laser single pulses of 15ns duration. Reordering of the damaged layer occurs for energy density irradiation above 0.6 J/cm2. The Pb atoms redistribute with a large component at the sample surface which is easily etched off. The remaining part of Pb impurities is substitutionally located, and the concentration exceeds the solid solubility limit by three order of magnitude. The formation of the metastable solution is explained in terms of a transient liquid layer produced during laser irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886007
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  • 6
    Electronic Resource
    Electronic Resource
    The sputtering mechanism for low-energy light ions (1979)
    Springer
    Applied physics 18 (1979), S. 391-398 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The computer simulation program MARLOWE which follows the trajectories of energetic ions and recoiling target atoms in solids has been used to calculate sputtering yields for low energy (0.1–10keV) light ions (H, D, T,4He). Recoil energy densities were calculated for comparison with analytical theories. The sputtering yields obtained for amorphous Fe agree within a factor of two with experimentally measured values for polycrystalline stainless steel, while the calculated yields for protons on amorphous molybdenum are more than twice the experimental values on polycrystalline material. The calculations show that in the parameter range investigated, ions backscattered in the solid contribute a major part to sputtering. This result confirms earlier calculations of the threshold energy for sputtering which are in agreement with recent measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899693
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  • 7
    Electronic Resource
    Electronic Resource
    The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compounds (1980)
    Springer
    Applied physics 23 (1980), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 61.70 ; 61.80 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-radiative recombination centres around dislocations. The centres are identified as As vacancies, which are emitted by climbing dislocations, concomitantly with the absorption of Ga interstitials. From scanning deep-level transient spectroscopy observations it is concluded that the so-called DX centres are Ga interstitials. The driving force for dislocation climb and thus for dark-line-defect formation is a supersaturation of Ga interstitials originating from the growth of the GaAs crystals under Ga-rich conditions as a consequence of the high volatility of As. Phenomena in other III–V compound semiconductors related to the formation of dark line defects in GaAs are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914916
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  • 8
    Electronic Resource
    Electronic Resource
    The effect ofγ-irradiation on amorphous silicon field effect transistors (1983)
    Springer
    Applied physics 31 (1983), S. 19-22 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.80 ; 85.30 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper deals with the effect ofγ-radiation from a Co60 source on the electronic properties of amorphous silicon field effect transistors. These thin film devices, deposited by the glow discharge technique, are being developed for addressable liquid crystal displays, logic circuits and other applications. 1 Mrad (Si) and 5 Mrad (Si) doses were used and the transistors were held at gate voltages between −8V and +8V during irradiation. Measurements on irradiated specimens showed shifts in threshold voltage of less than 3 V and a change in transconductance below 10%, both of which could be removed by annealing above 130 °C. These results are compared with presently available “radiation hardened” crystalline silicon device structures and it is concluded that in spite of the thicker gate insulation layer (0.3 μm of silicon nitride) of the amorphous devices, the latter are remarkably radiation tolerant, with little degradation in performance. Measurements on irradiatedα-Si films deposited on glass show pronounced conductivity changes, not observed in the transistors. It is suggested that these effects arise at the Si/glass interface, and are prevented by the presence of the silicon nitride film in the devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617183
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  • 9
    Electronic Resource
    Electronic Resource
    Monte-Carlo calculations of keV electron and positron slowing down in solids (1983)
    Springer
    Applied physics 32 (1983), S. 95-106 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 78.70 ; 29.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A Monte-Carlo simulation technique based on the screened Rutherford differential cross section for the elastic scattering and Gryzinski's semiempirical expression for the inelastic core and valence electron excitation is used to describe electrons and positrons slowing down in solids. The theoretical results are compared with the experimental backscattering, absorption and transmission results for aluminum, silicon, copper, and gold thin film and semi-infinite targets and good agreement is observed. The simulated stopping profiles are fitted with a simple analytic expression. The profiles are Laplace-transformed to give a useful data base for analyzing phenomena associated with slow positron re-emission from solids.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617834
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  • 10
    Electronic Resource
    Electronic Resource
    Free-running ruby laser annealing of boron implanted silicon (1981)
    Springer
    Applied physics 26 (1981), S. 243-246 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 42.80 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical treatment of the thermal phenomena during free-running ruby laser annealing of boron implanted silicon is presented. The heat equation was solved for a simplified shape of the pulse train consisting of a uniform succession of triangular spikes, identical in energy. During one spike the optical and thermal parameters of the sample were taken constant, but for each new spike, new values of these parameters were calculated taking into account their temperature dependence. Such a model predicts the melting of the top surface before the laser pulse has ended, for energy densities higher than 9×104 J/m2. RHEED confirms the presence of recristallization at about the same value of the laser-pulse energy densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617845
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  • 11
    Electronic Resource
    Electronic Resource
    Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements (1984)
    Springer
    Applied physics 33 (1984), S. 77-82 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ion-beam mixing of Fe-Al evaporated multiple-layer films has been investigated by measuring continuously the electrical resistivity of the samples during the bombardment. The experimental curves exhibit a tendency toward a saturation process and allow the determination of the critical dose corresponding to the total mixing of the multiple-layer film. The variations of the volume fraction of intermixed atoms as a function of the ion dose have been deduced and a semi-empirical model is proposed to explain the observed kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617611
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  • 12
    Electronic Resource
    Electronic Resource
    Temperature dependence of positron annihilation parameters in neutron irradiated molybdenum (1984)
    Springer
    Applied physics 33 (1984), S. 255-263 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron lifetime measurements have been performed for molybdenum samples containing different densities of voids and dislocation loops. The samples consisted of single crystal molybdenum exposed to 2.7×1018 fast neutrons/cm2 at 60°C, and subsequently annealed at 650°, 725°, 800°, and 875°C in vacuum (p〈10−7 Torr). After each annealing, where the densities of voids and loops were changed, positron lifetime measurements were performed in the temperature interval [−194°, 285°C]. In two-term fits of the measured spectra the longer lifetime, τe2-460 ps corresponds to an intensityI e2 increasing with sample temperature. The shorter lifetime τe1 decreases with increasing temperature. A three-state trapping model with and without detrapping is discussed, and appears to be incapable of explaining the observed temperature dependences. A four-state positron trapping model including detrapping is necessary and satisfactory. It describes positron trapping to voids and trapping to dislocation loops, which is followed by a competition between detrapping and positron transition to jogs or other dislocation-bound defects. Mathematical expressions of the four-state trapping model including detrapping are worked out and calculations of the intensityI e2 are compared with the experimental values ofI e2. By use of special models for the temperature dependence of trapping rates, numerical values can be determined for the positron-dislocation-binding energy and for specific positron trapping rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614668
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  • 13
    Electronic Resource
    Electronic Resource
    Monte Carlo calculations of keV electron and positron slowing down in solids. II (1984)
    Springer
    Applied physics 35 (1984), S. 51-59 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 78.70 ; 29.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An improved Monte-Carlo simulation technique has been used to investigate positron and electron slowing down in solid matter. Elastic scattering is based on exact cross sections of effective crystalline potentials and inelastic processes are described by Gryzinski's semiempirical expression for each core and valence electron excitation. Calculations with normal and oblique angles of incidence have been made for positrons and electrons impinging on semi-infinite aluminium, copper, tungsten, and gold. Interesting differences have been found between positron and electron penetration and backscattering features.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620300
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  • 14
    Electronic Resource
    Electronic Resource
    Binding of gas atoms to extended crystal defects in molybdenum studied by positrons (1982)
    Springer
    Applied physics 27 (1982), S. 247-250 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.80 ; 71.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The positron annihilation technique (P.A.T.) has been used in a study of interactions between gas impurities and crystal defects (vacancy loops and voids) in molybdenum. P.A.T. measurements were found to be very effective for this purpose. We propose that the observed effects are due to decoration of the void surface with nitrogen and vacancy loop decoration with hydrogen and nitrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619087
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  • 15
    Electronic Resource
    Electronic Resource
    Annealing study of defects in alpha-irradiated n-type GaAs by positron-annihilation technique (1986)
    Springer
    Applied physics 40 (1986), S. 95-99 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 78.70B
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-annihilation technique has been used to study the recovery of defects in α-irradiated n-type GaAs specimens. The Doppler-broadened lineshape parameterS, shows a smooth recovery of defects over the temperature region 120–600° C. The lifetime measurements have also been performed to characterise the types of defects present. The positron mean lifetimeτ m follows the behaviour of the “S” parameter, indicating a rather complex defect structure recovery. The variation in the defect specific parameter,R, with temperature is also consistent with these observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616484
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  • 16
    Electronic Resource
    Electronic Resource
    Simultaneous measurement of residual resistivity recovery and magnetic after-effect in high-purity α-iron (1986)
    Springer
    Applied physics 41 (1986), S. 191-195 
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    ISSN: 1432-0630
    Keywords: 72.15C ; 75.60L ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magnetic after-effect measurements were performed on high-purity α-iron after electron irradiation at 80 K. Using theLC-oscillator technique for measuring the magnetic after-effect we obtained simultaneously information about the recovery of the residual resistivity by analysing the permeability of the specimen at 4.2 K. The recovery in Stage IE and Stage III are briefly discussed in terms of the two-interstitial model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616839
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  • 17
    Electronic Resource
    Electronic Resource
    Study of the compounds formed on damaged ZnSe windows by multi-pulse microsecond pulsed TEA-CO2 laser irradiation in air (1986)
    Springer
    Applied physics 40 (1986), S. 227-233 
    Details
    ISSN: 1432-0630
    Keywords: 42.70 ; 42.60 ; 61.80 ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report on experimental data of chemical compounds formed in the damaged area at the surface of certain optical ZnSe windows subjected to multi-pulse microsecond pulsed TEA-CO2 laser irradiation in air. The results are analysed from the viewpoint of implication of the oxidation process activated under the action of CO2-laser power in plasma initiation and evolution of surface damage process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616599
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  • 18
    Electronic Resource
    Electronic Resource
    Ion mixing and thermochemical properties of markers in Cu (1986)
    Springer
    Applied physics 41 (1986), S. 171-174 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Markers of Nb, Ru, Ag, In, Sb, Hf, Pt, Au, and Bi in Cu were mixed by irradiation with 750 keV Kr at 77 K and analyzed in situ by backscattering of 1.9 MeV He+. Cu with Pt and Au markers were also irradiated and analyzed at 7 K. The results were identical to those obtained at 77 K results. The measured mixing efficienciesDt/øF D , for the various markers correlate with their respective impurity tracer diffusivities and impurity-vacancy binding energies in Cu. The correlation suggests that diffusion by a vacancy mechanism during a thermal spike as an important process in ion mixing of marker atoms in Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616835
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  • 19
    Electronic Resource
    Electronic Resource
    Radiation damage and annealing studies of ion bombarded cobalt (1984)
    Springer
    Applied physics 35 (1984), S. 99-102 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The effects of implantation-induced radiation damage on the thermal oxidation of cobalt have been studied. Bombardment by both Co+ self-ions and by Xe+ has been studied as a function of ion dose, energy and annealing temperature. A major increase in oxidation was observed for doses of 〉1016 Co+ cm−2 in agreement with previous studies on Al. The oxidation behaviour as a function of annealing temperature was markedly different for Co+ and Xe+ bombarded samples. For Co+ bombarded samples, damage anneals rapidly in the temperature range 20–300°C due to thermally assisted repair of point defects and vacancy clusters. However, for Xe+ bombardment, it is proposed that the higher annealing temperatures required for damage repair arise due to the stabilisation of three-dimensional vacancy clusters by the oversized Xe atoms. The increase in oxidation after annealing in the temperature range 300–500°C is thought to be due to vacancy release mechanisms which may affect oxide nucleation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620637
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  • 20
    Electronic Resource
    Electronic Resource
    Ion-beam mixing in pure and in immiscible copper bilayer systems (1986)
    Springer
    Applied physics 39 (1986), S. 59-64 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam mixing was measured in immiscible Cu bilayer systems after Kr irradiation at 6 K and at 295 K. It was observed that for the systems which form miscible liquids but which have limited solid solubility, Cu-Nb and Cu-Bi, mixing occurs at 6 but not at 295 K. For a system which is not miscible in either the solid or liquid state, mixing does not occur at either 6 or 295 K. Mixing was also measured in pure Cu isotope bilayer specimens,63Cu–65Cu, to provide a standard for the other measurements. The results are interpreted on the basis of an atomistic model of ion beam mixing. The model assumes that point defects are created in the initial phases of the cascade evolution, and that these defects migrate during the later ‘thermal spike’ phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177164
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  • 21
    Electronic Resource
    Electronic Resource
    Tantalum and cobalt suicides: Temperature sensor applications (1986)
    Springer
    Applied physics 40 (1986), S. 109-117 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion bombardment induced mixing of Ta-Si films has been studied using 400 keV argon ions. Doses varied from 7×1014 to 1×1017 Ar+ cm−2 with post-bombardment anneals of 180–900 s at temperatures in the range 600–860 °C using radiant heating. Silicide uniformity and stoichiometry were determined using alpha backscattering spectrometry. Optimum fabrication parameters were determined with regard to subsequent material sheet resistivity, temperature coefficient of resistance and application as a temperature sensing material. Similar measurements were made on CoSi2 layers prepared by annealing ion bombarded samples and comparison with silicide films arising from purely thermal annealing was made. CoSi2 was found to be the more suitable material for temperature-sensor applications, showing a positive linear variation in sheet resistivity in the range 0–400 °C for samples which could be prepared simply and reproducibly.
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    URL: http://dx.doi.org/10.1007/BF00616486
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  • 22
    Electronic Resource
    Electronic Resource
    Positron-lifetime study of vacancy annealing in neutron-irradiated GaAs (1987)
    Springer
    Applied physics 42 (1987), S. 125-127 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-lifetime measurements have been used to study the annealing of vacancies in neutron-irradiated GaAs. The vacancies which are interpreted as defects in the Ga sublattice disappear in a single annealing stage (at 500°C in GaAs doped with Si or Zn, and at 600°C in Cr-doped GaAs).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616721
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  • 23
    Electronic Resource
    Electronic Resource
    Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements (1988)
    Springer
    Applied physics 47 (1988), S. 255-258 
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    ISSN: 1432-0630
    Keywords: 81.60 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The oxidation of ion implanted silicon induced by a repetitive excimer laser working in liquid phase regime has been monitored by a simple in situ technique. It consists to follow the optical reflectivity at the wavelength 633 nm of the silicon samples under irradiation. The influence of implantation and laser irradiation conditions on the oxidation process has been investigated by this technique. The results obtained have been compared using infrared absorption data. The role of the Si/SiO2 interface roughness on the oxide film quality has been studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615931
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  • 24
    Electronic Resource
    Electronic Resource
    Optical saturation in the photothermal spectroscopy of fluorescent materials (1990)
    Springer
    Applied physics 50 (1990), S. 353-356 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 78.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dependence of the fundamental and harmonic photothermal (PT) signal on the intensity I 0 of the illumination source is analyzed. It is shown that both components of the PT signal do not increase indefinitely with I 0, but at sufficiently high power densities begin to decrease as 1/I 0. Along with photoacoustic saturation, this defines an upper limit for the sensitivity of spectrometers based on PT detection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323589
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  • 25
    Electronic Resource
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    Influence of implant dose and target temperature on crystal quality and junction depth of boron-doped silicon layers (1991)
    Springer
    Applied physics 53 (1991), S. 222-226 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract 30 keV boron ions are implanted at doses of 2×1014 and 2×1015 cm−2 in 〈100〉 silicon wafers kept at room or liquid-nitrogen temperatures. The samples are analyzed by double-crystal X-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry before and after furnace annealing at 800°C. The low-dose implant does not amorphize the substrate at any of the temperatures, and residual defects together with a remarkably enhanced boron diffusion are observed after annealing. The high-dose implant amorphizes the substrate only at low temperature. In this case, unlike the room-temperature implant, the absence of any residual defect, the incorporation of the dopant in substitutional position and a negligible profile braodening of boron are obtained after annealing. In principle, this process proves itself a promising step for the fabrication of p +/n shallow junctions with good electrical characteristics.
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    Kinetics of CW laser-induced crystallization and oxidation of thin, Sb, Se, and Sb2Se3 films in air (1991)
    Springer
    Applied physics 52 (1991), S. 192-196 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 81.40 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of Sb, Se and Sb2Se3 are deposited onto glass and irradiated by a cw-Ar+ laser beam. The kinetics of crystallization and oxidation are traced via the time dependence of optical reflectivity and temperature, T, of the irradiated zone. For Sb2Se3, transformations start abruptly when T attains a critical value, T c, independently of the laser beam power. These T c values are comparable to the ones observed under furnace annealing conditions.
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    URL: http://dx.doi.org/10.1007/BF00324417
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    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 469-473 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Nickel-antimony intermetallic compounds of different stoichiometries were studied by means of perturbed angular correlation (PAC) spectroscopy. The hyperfine interaction parameters for 111Cd probes in the crystal lattices of NiSb, Ni5Sb2, Ni3Sb and NiSb2 were determined. The results are discussed in the light of crystallographic data.
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    URL: http://dx.doi.org/10.1007/BF00331787
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    Effects of defects on the electronic structure of ion-irradiated graphite (1994)
    Springer
    Applied physics 58 (1994), S. 437-440 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 79.60
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    Notes: Abstract The effects of N+ and Ne+ ions impinging on a graphite target are studied by ultraviolet photoelectron spectroscopy. Changes in the valence band of the N+-irradiated graphite surface are found to be inherently different from the Ne+-ion-induced structural modification. They reveal a build-up of additional π-defect states at the top of the band, and confirm what appears to be a distinct character of the influence of nitrogen on an amorphous carbon matrix.
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    Ablation of poly(methyl methacrylate) and poly(2-hydroxyethyl methacrylate) by 308, 222 and 193 nm excimer-laser radiation (1995)
    Springer
    Applied physics 60 (1995), S. 261-270 
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    ISSN: 1432-0630
    Keywords: 42.55.Gp ; 61.80 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Data on the ablation of Poly(Methyl MetAcylate) (PMMA) and Poly(2-Hydroxyethyl MetAcylate) (PHEMA) with 0%, 1% and 20% of Ethylene Glycol DiMethAcrylate (EGDMA) as crosslinking monomer by 193, 222 and 308 nm laser radiation are presented. Direct photoetching of PMMA at 308 nm is demonstrated for laser fluences ranging from 2 to 18 J/cm2. The ablation rate of PHEMA is lower than the corresponding to PMMA and decreases when the amount of EGDMA increases. The determination of the absorbed energy density required to initiate significant ablation suggests that the photoetching mechanism is similar for all the polymers studied and is a function of the irradiation wavelength. The Beer-Lambert law, the Srinivasan, Smrtic and Babu (SSB) theory and the kinetic model of the moving interface are used to analyze the experimental results. It is shown that only the moving interface theory fits well the etch rate for all the selected polymers at the three radiation wavelengths.
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    URL: http://dx.doi.org/10.1007/BF01538401
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    Radiation-enhanced diffusion in ion-implanted glass (1993)
    Springer
    Applied physics 56 (1993), S. 555-559 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 42.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The Rutherford backscattering technique was used to characterize the purposedly added cesium impurities in soda-lime glass. The impurities were introduced into the glass matrix by an ion-exchange diffusion process at room temperature. The diffusion coefficient of cesium was determined from the measured depth profiles. The diffusion of the cesium impurities stimulated by 280 keV Kr+-ion beam irradiation was also studied. The depth distributions obtained are discussed using the model of radiation enhanced diffusion. Results are compared with theoretical values based on transport of ions in matter calculations and other experimental work.
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    Investigations of As-antisite-related defects in GaAs (1995)
    Springer
    Applied physics 60 (1995), S. 551-555 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optically Detected Magnetic Resonance (ODMR) is a powerful tool to study paramagnetic defects in semiconductors. As an example for the successful application of various methods based on ODMR, investigations of As antisite-related defects in GaAs are presented. Information about defect properties such as their microscopic structure, their metastability and thermal stability can be obtained by ODMR which was measured via the Magnetic Circular Dichroism of the optical Absorption (MCDA). Low temperature irradiation of GaAs (4.2 K) with 2 MeV electrons produces the Ga vacancy and some new As antisite-related defects. Annealing steps were investigated at 77 K and above. At 77 K the isolated As antisite defect is detected if semi-insulating (si) GaAs was irradiated. Between 200 K and 300 K the Ga vacancy decays. Its decay is correlated to the formation of an anti-structure pair. A second annealing step was found at about 520 K. There the anti-structure pair decays. EL2 is formed at that temperature if si material was irradiated, but this EL2 formation is not correlated with the anti-structure pair decay. We performed also magneto-optical measurements to investigate the metastability properties of the three As antisite-related defects. They all show metastability.
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    Irradiation-induced atomic defects in SiC studied by positron annihilation (1995)
    Springer
    Applied physics 61 (1995), S. 51-53 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The present paper reports on positron lifetime measurements on atomic defects in SiC after low-temperature (80 K) electron irradiation of low (0.47 MeV) and high (2.5 MeV) electron energies and doses from 1.8×1017 to 1.9×1019 e/cm2 as well as after subsequent isochronal annealing up to 1900 K. For these studies the single crystals of nitrogen doped (2–3×1018 cm−3) SiC grown by a modified Lely technique with hexagonal structure (6H polytype) were used. According to the positron lifetime measurements, very different types of vacancy-like positron traps are introducted after irradiation with electrons of either low or high energy. The formation of defect agglomerates and their decay at high temperatures is studied during isochronal annealing and related to earlier studies.
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    Positron lifetime and 2D-ACAR studies of divacancies in Si (1995)
    Springer
    Applied physics 61 (1995), S. 65-70 
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    Keywords: 78.70 ; 61.70 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V2) with the definite charge states, V 2 0 , V 2 −1 or V 2 −2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V 2 − using a specimen containing oriented divacancies.
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    Projection-patterned etching of silicon in chlorine atmosphere with a KrF excimer laser (1995)
    Springer
    Applied physics 61 (1995), S. 655-661 
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    ISSN: 1432-0630
    Keywords: 81.60Cp ; 61.80 ; 85.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The formation of relief features in silicon by a one-step process that avoids resist patterning has been achieved by laser-projection-patterned etching in a chlorine atmosphere. Etching is performed with a pulsed KrF excimer laser (λ=248 nm, τ=15 ns) and deep UV projection optics having an optical resolution of 2 μm. Etching takes place in two steps. Between laser pulses, the silicon surface is covered with a monolayer of chemisorbed chlorine atoms (one Cl per Si). During the laser pulse, surface transient heating at temperatures in excess of 1250 K results in the desorption of the reaction products (mainly SiCl2). At laser energy densities that induce surface melting, this desorption results in a saturated etch. rate of 0.06 nm per pulse, corresponding to the removal of about 0.5 Si monolayer per pulse. At densities below the melting threshold, reduced thermal and possibly a small amount of photochemical etching result in lower etch rates. Projection of a resolution test photomask onto the silicon surface shows that the size of etched features differs from the size of the projected features and strongly depends on the laser energy density. As a result of the heat spread in silicon and of the highly nonlinear character of the etching reaction, etched features smaller than the irradiated area are obtained at all fluences in the range 350–700 mJ/cm2. Etched lines having a width down to about 1.3 μm were produced. Proximity effects due to heat spread were also evidenced for small projected features (〈4 μm). The characteristics of the etched patterns are compared with those obtained for GaAs etching in chlorinated gases with the same experimental set-up. Significant differences in pattern resolution for Si and GaAs etching are observed. This variation in resolution is believed to result from the fact that Si has a greater thermal diffusivity than GaAs.
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    Calorimetric measurement of two-photon absorption and color-center formation in ultraviolet-window materials (1996)
    Springer
    Applied physics 62 (1996), S. 143-149 
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    Keywords: 61.80 ; 42.70 ; 42.65
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    Notes: Abstract Intensity-dependent absorption of 25 ns excimer laser pulses in common UV-window materials was investigated. By employing a calorimetric technique which provides greatly enhanced sensitivity compared to transmissive measurements, two-photon absorption coefficients were determined at intensities of 2–80 MW/cm2 and found to be in good agreement with previous measurements at 10–100 GW/cm2. Also, color-center formation in fused silica was observed. It was possible to quantify transient and cumulative effects as a function of intensity.
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    Investigation by ellipsometry of the damage in GaAs bombarded with low-energy Ar ions (1996)
    Springer
    Applied physics 62 (1996), S. 565-570 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 61.40 ; 78.65
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The crystalline-amorphous transition in GaAs induced by Ar ions (energy 1–3 keV) has been investigated using single-wavelength ellipsometry. The experiments have been performed in-situ at room temperature. Ion damage straggling, amorphization threshold and critical energy density have been derived by means of a simple analytical model for the growth of the amorphous layer. This model is discussed and the corresponding calculations are found to be in satisfactory agreement with experimental data.
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    The investigation of ion implanted layers by scanning electron microscopy (1976)
    Springer
    Applied physics 10 (1976), S. 111-119 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract SEM signals were used to image ion-implanted surfaces and to quantitatively analyze implanted layers. Silicon was used as substrate material for implantation, but some measurements on GaAs are also reported. Various ion species were implanted and the dependence of the signals upon fluence was studied. Electron backscattering and absorbed current were found to be influenced by the radiation damage rather than by the species of implanted ions. The degree of damage could be characterized by absorbed current measurements. The ion fluence necessary to produce amorphous layers was determined for N, P, and As in Si using this technique. This fluence was found to correspond to an energy deposition of 2.8×1021 keV/cm3. For the detection of very small amounts of implanted ions by characteristic X-rays, the electron energy must be fitted to the penetration depth of the ions under conditions maintaining reasonable excitation cross sections. The lowest value of the normalized detectability obtained in our measurements was 2.5×1013 Ions/cm2 for 45 keV phosphorus.
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    Lattice reordering in Pb implanted Ge crystals (1977)
    Springer
    Applied physics 13 (1977), S. 101-103 
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    Keywords: 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Channeling effect and sheet resistivity techniques have been used to investigate the damage induced by 40 keV Pb implantation in Ge crystals. At 450° the reordering of the Ge lattice occurs simultaneously to the out-diffusion of the implanted Pb atoms while the recovery of the sheet resistivity occurs at higher temperatures. 90% of the implanted atoms still retained in the crystal are located in substitutional sites.
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    Laser dye stability. Part 3. Bicyclic dyes in ethanol (1977)
    Springer
    Applied physics 14 (1977), S. 295-302 
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    ISSN: 1432-0630
    Keywords: 78.60 ; 61.80 ; 82.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A commercial coaxial xenon flashlamp has been used to evaluate the stability of a variety of coumarin and quinolone laser dyes. The lasing characteristics of over 30 dyes have been quantitatively evaluated as a function of the total excitation energy to which recirculating dye solution has been exposed. Degradation constants were determined and an evaluation was made of the effects of functional group variation upon the stability of the dyes. Comparison with the data of other workers revealed that exclusion of excitation energy below 220 nm does not change the stability of 4-methyl coumarins, but can increase the stability of other coumarins as much as 50 fold.
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    Ranges and standard deviations of implanted ions (1978)
    Springer
    Applied physics 15 (1978), S. 223-228 
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    ISSN: 1432-0630
    Keywords: 34 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper presents a theoretical analysis and simple expressions for the calculation of ranges and standard deviations of implanted ions in amorphous targets. Nuclear energy loss models are discussed to introduce an approximation formula for the nuclear stopping cross section appropriate for Thomas-Fermi, Lenz-Jensen and intermediate type potentials. The Firsov electronic stopping model has been used to show its successful application. Algebraical expressions for the total range of ions in monoatomic and biatomic targets as a function of ion energy result from the considerations presented. A quasi-elastic multiscattering model is suggested, which permits an easy estimate of projected ion ranges. The standard range deviation is obtained by determining the total average-square energy loss fluctuations. Finally a comparison of calculated and experimental results is made to show that calculations based on the Firsov electronic stopping model and the nuclear stopping cross section proposed here provide a better agreement with the experimental results than the wellknown Johnson-Gibbons LSS-calculations.
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    ESCA studies on changes in surface composition under ion bombardment (1977)
    Springer
    Applied physics 12 (1977), S. 101-112 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of ion bombardment on the composition of surfaces was investigated by means of ESCA. The bombardment of metal oxides with inert gas ions results, not only in sputtering of the surface, but also in reduction of the oxides. The rate of reduction is particularly high when the oxide/metal interface is within the range of the bombarding ions. Ion induced reduction was found in oxide layers, thinner than the escape depth of the photoelectrons, on Mo, W, Nb, Ta, Ti, Zr, Si, and Bi. The relationship between reduction phenomena, on the one hand, and the ion energy, angle of incidence, mass of the gas used for bombardment, and ion current density, on the other hand, was investigated in the case of the Mo/Mo-oxide system. Ion bombardment of surfaces may also result in the formation of new compounds. Two examples of this are the formation of carbides through the bombardment of contaminated surfaces and the ion induced formation of C-F compounds from a mixture of K2SiF6 and carbon.
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    Laser dye stability. Part 5 (1978)
    Springer
    Applied physics 16 (1978), S. 289-295 
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    ISSN: 1432-0630
    Keywords: 78.60 ; 61.80 ; 82.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photodegradation parameters that relate bleaching and absorption at the lasing wavelength λl have been examined for over 30 different coumarin and quinolone laser dyes in a number of solvents. Quinolone dyes were found to bleach faster than the coumarin dyes. The effect of chemical substituents was found to affect bleaching of the coumarin dyes only to a small (20%) extent in ethanol. The major effect of chemical substituents was in the conversion of a dye to products absorbing at λl. Effects of solvent, cover gas, and changes in fluorescent quantum yields are discussed. Of particular interest is the photodegradation parameterA, the ratio of the percent absorption at λl to the total input energy per dm3. Combined with τ, the total input energy per dm3 required for a laser to reach half its original intensity, it was found thatAτ=1.2±0.9 for all of the dyes independent of dye concentration in all of the solvents tested. It appears that where bleaching of the dye is only of the order of 10–20%, the absorption at λl is 1.2% when our dye laser has reached one-half of its initial output. It is consequently possible to estimate τ values of new dyes by the use ofA terms through the relationshipA 1τ1=A 2τ2 where τ1 of Dye 1 has been calibrated in the same dye laser system.
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    Blistering of rhenium irradiated with 21keV helium ions (1978)
    Springer
    Applied physics 17 (1978), S. 89-97 
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    Keywords: 61.80 ; 68.20 ; 61.70
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    Notes: Abstract This paper describes blistering of rhenium following 21 keV He+-ion irradiation at temperatures between 300 K and 1200 K. Blistering starts at 300 K at a dose of 3×1017 ions/cm2. The most probable blister diameter varies from 4400 Å at 300 K to 10100 Å at 1200 K. The blister depth τ bl , the blister diameter φ bl and the blister heighth bi show a distribution. From the observations one could derive the following relationships:h bl = 0.35φ bl ; τ bl =3.43φ bl 2/3 . The erosion yieldE y due to blistering is function of doseE y =0.51 atoms/ion at 3×1017 ions/cm2,E y =0.56 atoms/ion at 6×1017 ions/cm2 andE y =0.14 atoms/ion at 3×1018 ions/cm2. The sputtering yieldS (21 keV) is estimated to be ∼0.1 atom/ion. The corresponding surface regression is 44Å at 3×1017 ions/cm2 and 1323 Å at 9×1018 ions/cm2. Surface regression has therefore little influence on the observations at low doses.
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    Disorders produced during high-current and high-dose phosphorus ion implantation in silicon (1979)
    Springer
    Applied physics 20 (1979), S. 225-229 
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    Keywords: 61.70 ; 61.80
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    Notes: Abstract Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×1016ions/cm2) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.
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    Oxidation inhibiting properties of Si3N4-layers produced by ion implantation (1980)
    Springer
    Applied physics 22 (1980), S. 393-397 
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    ISSN: 1432-0630
    Keywords: 85.30 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The implantation of nitrogen into silicon to produce Si3N4 layers was investigated to find an alternative to CVD-Si3N4 layers used in ISOPLANAR-and LOCOS-technology. The technological properties of the implanted Si3N4 layers in respect to oxidation inhibition and etching are comparable or superior to CVD-Si3N4 layers. The implanted layers are more resistent against oxidation for nitrogen doses of 2.4×1017 cm−2 at 30keV. The etching behavior is comparable for both types of Si3N4-layers. In the implanted layers no pinholes are found and threre is no formation of a bird's beak, as is well known in the case of CVD-nitride.
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    On the inelastic-loss approximation for keV-energy ion collisions in solids (1981)
    Springer
    Applied physics 24 (1981), S. 121-126 
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    Keywords: 61.80 ; 79.20
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    Notes: Abstract Inelastic energy-loss in a single collisionT e and related stopping cross-sectionT e based on the Firsov model are evaluated for different screening functions in the elastic interaction potentials. Various approximations ofT e andS e for keV-ions in solids are discussed.
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    Lattice defects of V3Si single crystals studied by positron annihilation (1981)
    Springer
    Applied physics 25 (1981), S. 65-70 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The sensitivity of positrons to point defects created by the irradiation of V3Si with neutrons is demonstrated. We found no indication of thermal vacancies by thermal equilibrium measurement up to 1273 K which indicates that the monovacancy formation enthalpy for V3Si isH 1V F ≧(1.84±0.14) eV. Investigations within the range of homogeneity for excess vanadium suppot the idea that substitutional defects are the dominating defect type, whereas for excess silicon a direct confirmation of existing structural vacancies as the dominating defect type is given.
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    Calculation of the temperature during electron pulse annealing of silicon (1981)
    Springer
    Applied physics 25 (1981), S. 139-142 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 78.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High power density electron beams offer new opportunities for studies of epitaxial growth of semiconductor materials. Assuming that the mechanism of epitaxial growth can be understood as a surface melting followed by supercooling regrowth, the heat flow equation has been applied to calculate the temperature reached after an electron beam pulse of power density between 0.5–2 J/cm2. Comparison with laser annealing is made.
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    URL: http://dx.doi.org/10.1007/BF00901286
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    Depth of origin of sputtered atoms (1981)
    Springer
    Applied physics 25 (1981), S. 307-310 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 68.55 ; 61.80 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Estimates are given for the distribution of the depth of origin of sputtered atoms in the low-fluence limit, as well as the corresponding distribution of atoms sputtered into a given energy interval. The former distribution is well described by an exponential profile, with the characteristic depth being consistent with previous results. The latter distribution is characterized by an energy-dependent depth scale and a shape that varies from exponential at low sputtered-atom energies to inverse-power form at higher energies.
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  • 50
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    γ-Ray (and electron) induced annealing of nuclear tracks in polymeric detectors (1981)
    Springer
    Applied physics 25 (1981), S. 337-345 
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    ISSN: 1432-0630
    Keywords: 29 ; 34 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Energy loss profiles for secondary electrons and γ-rays are discussed and the interactions of γ-rays with the activated species within the core of a nuclear track investigated. Based on an electron-hole trapping mechanism experimental values for the activation energies of annealing for nuclear tracks in the range of 0.26 to 0.5 eV have been obtained. These compare favourably with theoretical expectations. The consequences of variations in the detection sensitivities of such detectors are discussed.
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    Incorporation of oxygen atoms into As+ implanted silicon during cw CO2 laser annealing in O2 (1983)
    Springer
    Applied physics 31 (1983), S. 71-74 
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    ISSN: 1432-0630
    Keywords: 42.60 ; 61.80 ; 78.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By annealing Si layers amorphised by ion-implantation with a cw CO2 laser beam in oxygen rich environments, it has been possible to incorporate O atoms into the recrystallized lattice. Absorption measurements on such regrown layers by infrared spectrometry have shown that the impurities are preferentially bonded into substitutional lattice sites, rather than existing interstitially. Supplementary RHEED studies have indicated thatβ-cristobalite, a crystalline form of SiO2, has been formed. These investigations highlight the importance of the ambient during cw laser annealing.
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    Energy distributions of low energy H ions backscattered from graphite, stainless steel, and molybdenum (1982)
    Springer
    Applied physics 27 (1982), S. 263-268 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Energy distributions of H+ and H− backscattered from graphite, stainless steel and molybdenum were measured for low incident beam energies (150∼1500 eV). The energy distributions of H− resembled that of H+, while the intensity ratio of H− to H+ varied from material to material and with the incident proton energy. A peak in the energy distribution moved to the “cutoff” energy with decreasing incident energy, which can be attributed to an increase in nuclear stopping cross section and a decrease in electronic stopping cross section. The ratio of the peak energy to the incident energy is related to the reduced energy ɛ of incident beam independent of target materials in the measured region (0.03〈ɛ〈 3.3).
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    Investigation of heavy ion produced defect structures in insulators by small angle scattering (1985)
    Springer
    Applied physics 37 (1985), S. 37-46 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 61.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fast heavy ions produce stable defects in most dielectrica. As examples mica, Polyethylenterephtalat and Polystyrol were irradiated with Ar, Ni, Kr, Xe and U ions in an energy range from 0.5 up to 20 MeV/u. The resulting defects were investigated by neutron and x-ray small-angle scattering. The ion beam supplied by the UNILAC accelerator at GSI Darmstadt is characterized by its small emittance, the well defined mass, charge and energy of the ions and their stochastical distribution in the phase space. In scattering experiments the system of scattering centers created by these ions causes a scattered intensity distribution which strongly depends on the orientation of the sample with respect to the unscattered neutron or x-ray beam. This dependence is investigated and explained. By a mathematical model — describing form, size, and density of the average ion track — the measured intensity distribution is simulated. Based on the model, computer procedures are written, simulating the scattering experiment by varying the most important experimental and instrumental parameters and calculating the expected theoretical intensity distribution on the detector. The parameter values of this model — the maximum density difference in the track, length of the defect, and radial dimension — are determined by least square fits to the measured data. A simple description of the dependence of these parameters on the ion energy can be given in relation to the energy loss of the primary ion. It is not only possible now to predict an expected track, to calculate its volume and the number of missing atoms, but moreover to check theories of the track formation.
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    Effect of projectile energy, specimen temperature and fast thermal diffusing atoms on ion beam mixing (1985)
    Springer
    Applied physics 38 (1985), S. 139-143 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam mixing of Au markers in Cu samples was measured after 500-keV Kr irradiation at 6, 80, and 295 K. Additional measurements were performed on samples irradiated at 80 K with 1.8-MeV Kr and 295 K with 1.7-MeV Kr. It was observed that the mixing is the same at 6 K as at 80 K but that it is somewhat greater at 295 K. It was also found that at both 80 and 295 K the mixing is the same for 500-keV as for 1.7 MeV projectile energies if the irradiations are compared on the basis of deposited damage energy. Another set of mixing measurements were performed on Ni and Ti markers in Hf and Hf markers in Ni at 6, 80, and 295 K. Although Ni is known to be a fast thermal diffusing atom in Hf, only a 50% difference in ion beam mixing was observed for the Ni and Ti markers at 6 or 80 K. For these marker systems, the mixing was also approximately the same at 6 and 80 K. At 295 K, the mixing remained constant for the Ti marker, increased slightly for the Hf marker in Ni, but decreased strongly for the Ni marker in Hf. The results for both sets of measurements are interpreted according to a qualitative picture of the development of displacement cascades obtained from molecular dynamics computer simulations.
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    Iron contamination in ion implanted silicon, as revealed by x-ray and electron diffraction (1986)
    Springer
    Applied physics 39 (1986), S. 191-195 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A surface contamination effect was detected by double-crystal x-ray diffraction analysis of silicon wafers implanted with silicon ions at different doses and energies after annealing at 700 °C. The hypothesis of recoiled oxygen from the native oxide, as the impurity responsible for surface strain, was excluded by x-ray characterization of a series of samples implanted through thermally grown silicon oxides. The surface positions of the strain, resulting from x-ray analysis after 700 °C annealing and the analysis of the electron diffraction patterns, taken on particles originated from precipitation of the impurity by 1000 °C heating, allowed to conclude that the contamination phenomenon is due to iron atoms coming from the ion implanter.
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    Focused ion beam gallium implantation into silicon (1986)
    Springer
    Applied physics 39 (1986), S. 183-190 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and lattice disorders of 50 keV, focused ion beam (FIB) gallium-implanted silicon layers have been investigated as a function of beam scan speed and ion dose. The critical dose for continuous amorphous layer formation is 8 ∼ 10 × 1013 ions/cm2, when the beam scan speed is lowered to about 10−2 cm/s. This is about 1/3 that of conventional ion implantation. The increase in secondary defect formation after annealing is also observed as the beam scan speed decreases under implantation conditions close to the critical dose. However, the effect of high dose rate on the electrical activation of gallium atoms and critical dose reduction is not as significant as with FIB implantation by a lighter ion mass, such as boron. The results are compared with those obtained by conventional ion implantation.
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    Ion beam induced atomic mixing in Fe/Al bilayered samples (1986)
    Springer
    Applied physics 41 (1986), S. 127-135 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 72.15 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Atomic mixing of Fe/Al bilayered samples induced by an energetic xenon beam has been studied by RBS-TEM and sheet resistivity measurements. Mixing is detected at 2.5 × 1015 Xe/cm2 and then proceeds up to 2 × 1016 Xe/cm2. A blocking effect of the mixing for larger doses is observed. Homogeneous concentration is not obtained across the sample. Instead a pronounced graded composition is reached. Several explanations of the mixing process and the subsequent blocking effect are suggested: — sharp gradients in the nuclear energy deposition profile which decrease with dose — grain growth phenomena — precipitation of crystalline xenon acting as efficient annihilation sinks for vacancies.
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    A systematic analysis of defects in ion-implanted silicon (1988)
    Springer
    Applied physics 45 (1988), S. 1-34 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A classification scheme for the different forms of implant-related damage which arise upon annealing consisting of five categories is presented. Category I damage is “subthreshold” damage or that which results prior to the formation of an amorphous layer. If the dose is increased sufficiently to result in the formation of an amorphous layer then the defects which form beyond the amorphous/crystalline (a/c) interface are classified as category II (“end of range”) damage. Category III defects are associated with the solid phase epitaxial growth of the amorphous layer. The most common forms of this damage are microtwins, hairpin dislocations and segregation related defects. It is possible to produce a buried amorphous layer upon implantation, If this occurs, then the defects which form when the two a/c interfaces meet are termed category IV (“clamshell”, “zipper”) defects. Finally, category V defects arise from exceeding the solid solubility of the implanted species in the substrate at the annealing temperature. These defects are most often precipitates or dislocation loops. In addition to presenting examples of this classification scheme, new results emphasizing category II, IV, and V defects will be presented. For category II defects, the source, dose and mass dependence as well as the influence of pre- and post-amorphization is discussed. The category IV defects which arise from buried amorphous layers in {100} oriented As implanted samples is presented. Half loop dislocations which arise during annealing of high dose As implants, are shown to originate in the category V defects and grow upon dissolution of As clusters and precipitates.
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    Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation (1989)
    Springer
    Applied physics 48 (1989), S. 255-260 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
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    Ion beam mixing of Al/Fe binary systems (1989)
    Springer
    Applied physics 48 (1989), S. 347-354 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35Fx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam mixing of Al layers on Fe and Fe layers on Al are studied by irradiation with 200 keV Xe+-ions at room temperature as a function of the thickness of the top layer and of the ion fluence from 5×1015 to 7.5×1016ions/cm2. Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES from the ion beam induced mixing effects. Auger electron spectroscopy data reveal that the mixing induced diffusivity ought to be considered as a function of concentration. The diffusion coefficients are evaluated by the Boltzmann-Matano method. A strong dependence of the diffusion coefficients and also the mixing efficiencies from the ion dose, the depth of the interface and the nuclear energy deposition were observed. Results are discussed in terms of the diffusional and collisional mixing as well as chemical affinity of both Fe and Al.
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    Damage studies in cubic ZnSe single crystals grown from melt (1989)
    Springer
    Applied physics 48 (1989), S. 451-456 
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    ISSN: 1432-0630
    Keywords: 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A microscopy study of the morphology of the damage produced by TEA-CO2 laser pulses in cubic ZnSe single crystals grown from melt is presented. The observed bulk filamentary damage consists of relatively uniformly distributed “elementary” damaged zones, located at specific sites where absorbing inclusions could exist. Transmission electron microscopy and laser ion mass spectroscopy investigations revealed the absorbing inclusions to be thin graphite foils, originating from the crucible used for crystal growth.
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    Origin of ion beam mixing effects on morphological features in solid-phase titanium silicide formation (1990)
    Springer
    Applied physics 50 (1990), S. 265-267 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 81.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The origin of the ion beam mixing effect, which causes the formation of smooth silicide films, is investigated for the Ti/Si solid-phase silicidation reaction. Ge ion beam mixing of a conventional Ti/c-Si structure with an oxide-contaminated interface shows an obvious effect when the implant conditions are such that the Ti/Si interface is amorphized. On the other hand, silicidation without ion mixing for Ti/a-Si and Ti/c-Si structures with oxide-free interfaces, prepared by sequential deposition in UHV, results in smooth and rough film surfaces, respectively. This strongly suggests that the ion beam mixing effect primarily comes from the amorphization of the Si substrate surface rather than the destruction of the interfacial oxide film.
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    Photoabsorption of BCl3 Gas under pulsed ArF excimer laser irradiation (1990)
    Springer
    Applied physics 50 (1990), S. 317-320 
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    ISSN: 1432-0630
    Keywords: 33.80 ; 61.80 ; 61.70T
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The gas immersion laser doping (GILD) technique requires the measurement of the fraction of incident light absorbed in the gas phase during the irradiation with a pulsed laser. Here we report the absorption of boron trichloride (BCl3) gas at the wavelength of a pulsed ArF excimer laser (λ=193 nm). We have determined the one-photon (σ1) and two-photon (σ) absorption cross sections of this dopant gas for 193 nm. The values of σ1 and σ are 3.6×10−20 cm2 and 9×10−45 cm4·s, respectively. However, the distinction between simultaneous and sequential absorption has not been possible. Based on these results, we have established a relationship which allows the calculation of the fraction of incident light absorbed as a function of incident intensity and gas pressure.
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    Temperature characteristics of positron trapping at defects in electron-irradiated silicon (1989)
    Springer
    Applied physics 49 (1989), S. 659-664 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
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    TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon (1992)
    Springer
    Applied physics 54 (1992), S. 124-131 
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    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
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    Energy transfer to a copper surface by low energy noble gas ion bombardment (1992)
    Springer
    Applied physics 55 (1992), S. 274-278 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The energy transferred to a copper surface by bombardment with Xe+, Ar+, and He+ ions with kinetic energies in the range 100–4000 eV has been studied by our group in previous experiments. There were significant experimental uncertainties for that data at energies below about 200 eV. The present investigation overlaps the previous work, extends the energy range to 10 eV, and includes data for Ne+. Particular emphasis is placed on the energy range below 200eV. A specially designed ion source was employed in these experiments. A polycrystalline copper film deposited onto a highly sensitive calorimeter was used as the target material. The results show that the Xe+ ion deposits more than 97% of its energy over the entire range investigated whereas the lighter ions deposit a decreasing fraction of their energy below about 1 keV. The decrease is largest for the lightest ion (He+). In all cases the deposited energy is about or more than 70% of the incident energy. It will be shown that the present results are in agreement with previous measurements for copper and are qualitatively in good agreement with computer calculations using the TRIM.SP code.
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    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 353-361 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sb/Ni multilayers of 200 nm total thickness were ion-beam mixed with 900 keV Xe++ or 600 keV Ar++ ions using fluences up to 1016 ions/cm2. The formation of crystalline intermetallic phases was observed by X-ray diffraction (XRD). To investigate, on a microscopic scale, the mixing-effects the perturbed angular correlation (PAC) technique was applied using some 1012 implanted radioactive 111In ions. The different phases were identified in the PAC spectra by comparison with those taken for single-phase material of intermetallic Ni/Sb compounds and pure Ni and Sb. After the 111In implantation usually up to 50% of the probes are found with PAC-parameters typical for the single metallic layers. The rest of the probes showed a complex mixture of electric field gradients (EFG). During ion-beam mixing this fraction increased to 100%. In some experiments individual EFGs were resolved indicating the formation of crystalline NiSb and Ni5Sb2 intermetallic phases.
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    In-depth modifications of implanted amorphous carbon films (1994)
    Springer
    Applied physics 59 (1994), S. 667-672 
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    ISSN: 1432-0630
    Keywords: 81.15 ; 61.80 ; 82.80 ; 78.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Amorphous carbon films (a-C:H) and nitrogen incorporated carbon films [a-C:H(N)] deposited by a self-bias glow discharge have been implanted with 70 keV nitrogen ions at fluences of 0.6, 1 and 2×1017 N/cm2. The in-depth modifications caused by ion implantation were determined by means of nuclear techniques, such as Rutherford Backscattering Spectrometry (RBS), Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection Analysis (ERDA), as well as by Auger Electron Spectroscopy (AES) and Raman scattering. ERDA profiles show that nitrogen implantation causes hydrogen depletion, the amount of which depends on the film composition and on the ion fluence. In a-C:H(N) films nitrogen loss was also measured. The induced structural modifications in both a-C:H and a-C:H(N) films were followed by both AES, using factor analysis, and microprobe Raman spectroscopy. They turn out to be related to the energy deposited by the incident ions. Our results indicate that the ion-beam bombardment causes in both a-C:H and a-C:H(N) films an increase of either the degree of disorder or the ratio between sp2/sp3 bonds across the hydrogen-depleted layer, which depends on the ion fluence.
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    Oscillations in laser direct writing of W from WCl6 and H2: A theoretical analysis (1995)
    Springer
    Applied physics 61 (1995), S. 347-351 
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    ISSN: 1432-0630
    Keywords: 42.62 ; 44.30 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The origin of oscillations observed in laser direct writing of W lines on quartz substrates is studied on the basis of a one-dimensional model. The dependence of oscillations on laser power, scanning velocity, etc., is discussed. The predictions are compared with experimental data. The present approach can be applied also to other systems, where such oscillations have a different origin.
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    URL: http://dx.doi.org/10.1007/BF01540106
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    Positron lifetimes for neutron-irradiated C60 (1995)
    Springer
    Applied physics 61 (1995), S. 335-337 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The neutron-irradiation effects on C60 fullerite powder were studied by positron lifetime spectroscopy. Below 0.5 ns, a single lifetime of 382±1 ps was found for the unirradiated annealed sample and two components were resolved after neutron irradiation with a dose of 2×1016 n/cm2. Possible origins of these components are briefly discussed.
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    Implantation doping of germanium with Sb, As, and P (1977)
    Springer
    Applied physics 12 (1977), S. 173-178 
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    ISSN: 1432-0630
    Keywords: 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD Sb=1.8×10−13 cm2/s,D As=9×10−14 cm2/s andD P=4×10−14 cm2/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO2 layer.
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    The relationship between void size and positron lifetime in neutron irradiated molybdenum (1977)
    Springer
    Applied physics 12 (1977), S. 187-189 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A number of molybdenum specimens, each containing a characteristic void size spectrum, have been subjected to positron lifetime measurements. Although the average void size varied in radius from 9 Å to 45 Å the long positron lifetime in the specimens was remarkably constant with τ2 = 465±5 ps. Therefore for the range of void sizes examined, this parameter appears to be independent of the void size.
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    Laser dye stability. Part 2 (1977)
    Springer
    Applied physics 12 (1977), S. 327-332 
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    ISSN: 1432-0630
    Keywords: 78.60 ; 61.80 ; 82.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The lifetime of a laser dye solvent system is experimentally shown to increase with increased energy per excitation flash. By measuring the variation in laser output with differing input energies, it is shown that degradation constants can be determined. These degradation constants can be used to give the laser output as a quadratic function, a degradation equation, involving the input energy per flash and the total input energy per unit volume as independent variables. This degradation equation, in turn, can be reduced to a relationship between the half-life and the input energy per flash. The half-life for a given input energy per flash is found to approach an upper limit which can be derived using the degradation constants. The effects upon a laser dye system lifetime of varying the concentration of the dye and mirror reflectivity are discussed. Experimental evidence is presented showing that these two parameters do not affect the upper limit half-life for coumarin 1 in ethanol.
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    AES investigations of Ar+ ion retention in Si during Ar sputtering (1978)
    Springer
    Applied physics 16 (1978), S. 43-46 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 68.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Argon retention in silicon has been studied by AES in the energy range between 1 and 15 keV at bombardment fluences up to ∼1018 ions/cm2. AES data of implanted argon in silicon near the surface region, as obtained during sputtering, can be interpreted qualitatively by a simple model of ion collection. Discrepancies between calculated and measured saturation values of collected argon ions indicate that during implantation at high fluences addition surface effects become important and that the simple model of ion collection has to account for this. Quantitative AES correlated with RBS indicates pronounced concentration gradients of argon in silicon near surface regions.
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    On the influence of reactive gases on sputtering and secondary ion emission (1978)
    Springer
    Applied physics 16 (1978), S. 271-278 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
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    Notes: Abstract As a continuation of earlier sputtering yield measurements in an ion microprobe, the influence of oxygen and nitrogen on sputtering yield, ionisation efficiency and depth resolutions has been studied. For inert gas bombardment the yield of Ti and V falls sharply at a certain oxygen exposure. While this decrease in yield can be correlated with an increase in surface binding energy in the case of titanium, cone formation causes the yield to drop for oxygen exposed vanadium. In contrast, during nitrogen bombardment the only effect of oxygen exposure is a drastic increase of the ionisation efficiency; the sputtering yield or the depth resolution Δz/z is hardly influenced by oxygen coverage. As was observed earlier in the case of Cu−Ni layers, Δz is essentially constant for erosion depthsz≳800 Å, thus yielding better resolution at large depths than is to beexpected from a sequential layer removal model. The extent of the transition zone Δz, is determined by surface topography and thus depends on the target composition as well as its structure.
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    Laser effects in silicon with deep amorphous layer (1979)
    Springer
    Applied physics 20 (1979), S. 353-356 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
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    Notes: Abstract The effects of single-pulse ruby laser irradiation have been investigated in Si samples with disorder layers located at a depth of 2000 Å from the crystal surface and extending up to 8000 Å. This disorder was obtained by implantation with 350 keV N+ to a fluence of 2×1016/cm2. Channeling, diffraction and transmission electron microscopy were used to characterize the structure of the irradiated layers. After 1.5 J/cm2 irradiation the damaged layer reorders partially, while for about 2.0J/cm2 the surface single crystal becomes polycrystalline. At a higher energy density all the material undergoes the transition to single crystal. Calculations based on the liquid model accounts in part for the experimental results.
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    A search for a thermal spike effect in sputtering (1983)
    Springer
    Applied physics 30 (1983), S. 83-86 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The temperature dependence of the sputtering yield was measured for lOOkeV per atom bombardment of silver with molecular and atomic antimony ions. No exponential increase of the yield was found in the temperature range from 25° to 775 °C, although a pronounced nonlinear effect is observed when the yield of these projectiles is compared,Y(Sb 2 + )≈ 1.5×[2Y(Sb+)]. We conclude that there is no influence of the lattice temperature on collision spikes.
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    Low-power multi-pulse laser annealing of α-Ge (1983)
    Springer
    Applied physics 30 (1983), S. 161-167 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 68.55
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    Notes: Abstract In this paper we want to show by means of Reflection High Energy Electron Diffraction (RHEED) techniques that the recrystallization processes taking place on amorphous germanium films irradiated with low-power superimposed ruby laser pulses occur gradually. Furthermore, in implanted α-Ge films the amorphous-crystalline front moves from the surface of the specimen towards the substrate, while the opposite occurs for glow-discharge deposited films. Moreover, electron microscope observations carried out with a double-stage carbon replica technique at different depths in the specimen show that defect migration is one of the competitive mechanisms in low-power laser annealing.
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    Positron lifetime measurements on electron irradiation damage in amorphous Pd80Si20 and Cu50Ti50 alloys (1982)
    Springer
    Applied physics 27 (1982), S. 31-33 
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    ISSN: 1432-0630
    Keywords: 61.40 ; 61.80 ; 78.70
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    Notes: Abstract Positron lifetime measurements were performed on amorphous Pd80Si20 and Cu50Ti50 alloys irradiated with 3MeV electrons at 20K. The irradiation was found to increase the mean positron lifetime in both specimens indicating the presence of vacancy-like radiation damage. Isochronal annealing between 77 K and 300 K resulted in a continuous reduction of the positron lifetime, which suggests a gradual recovery of the irradiation induced defects.
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    Positron annihilation and Hall effect in electron irradiatedn-InP crystals (1982)
    Springer
    Applied physics 29 (1982), S. 219-223 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 71.55 ; 78.70
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    Notes: Abstract Positron annihilation and Hall effect inn-InP crystals as a function of electron irradiation up to 1 · 1019 cm−2 and post-irradiated isochronal annealing up to 550 °C have been studied. It is concluded that in irradiatedn-InP samples positrons interact with negatively charged acceptor-type defect with level atE c −0.33 eV, probablyV In (primary defect). In post-irradiated isochronal annealed (up to 330 °C) samples ofn-InP positron trapping occurs preferably in secondary defects-vacancy clusters, which are formed in the temperature range (150–300 °C). Inn-InP crystals containing radiation induced defects the trapping rate was found to decrease with temperature in the range (300–77) K.
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    Heavy-ion-induced desorption of deuterium from titanium (1987)
    Springer
    Applied physics 42 (1987), S. 19-33 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 79.20N
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A titanium-layer of approximately 90 nm thickness has been homogeneously loaded with deuterium by implantation and diffusion. Desorption was studied by use of28Si ions of up to 20 MeV energy (and other ions). The spectrum of the elastic-recoil-detection method serves as indication of the released and retained amount of deuterium. The retained deuterium is recorded as a function of the employed ion dose and is converted into a desorption rate as a function of the retained deuterium concentration. — A one-dimensional theory considering transitions from vacuum to surface and surface to Ti volume (and back) leads to a system of equations, the solutions of which allow adaptation to the experiment and therefore an evaluation with respect to certain characteristic parameters. — Some of the results might be influenced by the high concentration of C and O impurities.
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    Some calculations of temperature profiles in thin films with laser heating (1987)
    Springer
    Applied physics 42 (1987), S. 279-285 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 44.90
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We present some calculations of heat flow in an absorbing film deposited on a non-absorbing substrate. The energy source is a Gaussian laser beam. We analyse the effects of film thickness, thermal conductivity, spot radius and forced cooling on the temperature profile and, in a special case, the time evolution of that profile. The emphasis is on applications in optical bistability.
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    Heavy-ion induced desorption of deuterium from titanium (1987)
    Springer
    Applied physics 42 (1987), S. 179-192 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 66.30 ; 79.20N
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    Notes: Abstract The model used in the first part of this investigation is enlarged to take account of the experimentally found inhibition of desorption by gases from the rest-gas atmosphere of the target chamber. The main parameters that can be found by adaptation of a model set of equations are the rate ratios for transfer of chemisorbed atoms in the surface and back, and of the maximal desorption current densities from the surface into the vacuum for deuterium and foreign gases. The desorption cross sections are discussed in relation to the electronic stopping power of the fast ions.
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    Disclosure of defects in YAG crystals by the thermoluminescence method (1984)
    Springer
    Applied physics 35 (1984), S. 249-253 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 71.35 ; 78.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The topograms revealing the anisotropic distribution of defects in the volume of monocrystalline YAG samples have been obtained by the thermoluminescence (TL) technique. It has also been shown that the anisotropic distribution of the lattice defects affects strongly the shape of the TL curves. The greatest changes in the TL intensity were observed in the areas of the samples distributed symmetrically every 120°. It was noted that the selective distribution of the TL intensity is caused mainly by the presence of the (211) facets as well as growth striations formed during the growth process. The groups of lines observed in the TL spectrum have been ascribed to the Tb3+ ions, excited owing to the radiationless energy transfer from the bound exciton states (BES).
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    Ion-beam induced mixing in Al-Ni (1985)
    Springer
    Applied physics 36 (1985), S. 103-111 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
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    Notes: Abstract Ion beam induced mixing of Al-Ni has been studied using N 2 + and Ar+ bombardment. High dose (4×1017 ions cm−2) nitrogen bombardment was found to cause blister formation with no unambiguous evidence of mixing. However, using argon ions at elevated substrate temperatures (400–450 °C) led to extensive mixing of 2000 Å Al layers on Ni. The mixing mechanism is considered to be point defect mediated radiation enhanced diffusion with a possible contribution from cascade mixing and interfacial oxide layer breakdown during the initial stages of treatment.
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    Ion-beam induced mixing of Cu/Au bilayer thin film (kinematics and formation of solid solutions) (1988)
    Springer
    Applied physics 46 (1988), S. 13-16 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 64 ; 66.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion-beam induced atomic mixing of Cu/Au bilayer thin film is studied using combined electrical resistivity measurements and Rutherford Backscattering Spectrometry (RBS). 400 keV Kr+ ion irradiation with fluences ranging from 3.3×1015 to 7.6×1016 ions/cm2 at room temperature have been used. Ion beam mixing lead to a uniformly mixed metal alloy. The formation of Cu/Au solid solutions depends on the initial composition and on the fluence of irradiating ions. For an initial composition of Cu42Au58, a Cu-rich solid solution of composition Cu72Au28 is formed after irradiation with 7.6×1016 ions/cm2. The kinematics of the intermixing process is also studied by in situ electrical resistivity measurements which confirmed the formation of the Cu/Au solid solutions.
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    Photochromic behaviour of doped Bi4Ge3O12 single crystal scintillators (1991)
    Springer
    Applied physics 52 (1991), S. 307-312 
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    ISSN: 1432-0630
    Keywords: 61.80 ; 78.50 ; 76.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The changes induced by ultraviolet (UV) illumination on the optical absorption and electron paramagnetic resonance (EPR) spectra of Bi4Ge3O12 single crystals, doped either with Fe (and Gd) or Mn, have been followed at room temperature (RT). In both crystals several overlapping optical absorption bands develop under UV illumination, covering from ≈ 0.7 eV up to the band edge of the matrix. The optical damage can be bleached by heating the samples above RT or by illumination with visible light. Although these optical changes temporarily correlate with the variation of the Gd3+ and Mn2+ concentrations, it has been concluded that other defects are present and partially responsible for the optical damage.
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    CW laser-assisted oxidation of thin Cd, In, Sn, and Zn films in air (1990)
    Springer
    Applied physics 50 (1990), S. 311-315 
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    ISSN: 1432-0630
    Keywords: 81.60 ; 61.80 ; 68.55
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films of Cd, In, Sn, and Zn are deposited onto glass and irradiated in air by means of a cw-Ar+ laser beam. The films are oxidized. The variations of the diameter of the oxidized zones are measured as a function of time and laser beam power, P. The temperature is measured by an interferometric method. It is shown that oxidation proceeds rapidly at some critical temperature, independent of P over some range of P, in the cases of Cd, In, and Zn. These critical temperatures correspond to the melting temperatures of Cd and In. No relation to any specific temperature of the Zn-O phase diagram is found. Feedback effects are also discussed.
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    Surface plasmon enhanced transient thermoreflectance (1990)
    Springer
    Applied physics 51 (1990), S. 350-353 
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    ISSN: 1432-0630
    Keywords: 07.60 ; 42.80 ; 61.80
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    Notes: Abstract It is shown that optically excited surface plasmons can be used for measurements of the surface temperature of a metal with nanosecond time resolution. This method is closely related to transient thermoreflectance, but its sensitivity is considerably higher. We give a survey on the mechanisms involved, briefly discussing the dependence on the sample properties. Experimental confirmation of the proposed sensitivity enhancement as well as the time resolution is presented.
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    Femtosecond-excimer-laser patterning of YBa2Cu3O7 films (1991)
    Springer
    Applied physics 53 (1991), S. 282-283 
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    Keywords: 61.80 ; 42.55 ; 74.70
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    Notes: Abstract Projection patterning of Y-Ba-Cu-O films on (100) SrTiO3 and (100) MgO substrates using femtosecond KrF-excimer-laser pulses is reported
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    Ion-beam-induced atomic transport and phase formation in the system nickel/antimony (1993)
    Springer
    Applied physics 57 (1993), S. 343-351 
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    Keywords: 61.80 ; 68.35 ; 68.55
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    Notes: Abstract We report on the ion-beam mixing processes of Sb/Ni marker layers and bilayers under the irradiation of ions ranging from He to Pb, at 80 K and at room temperature. The concentration profiles are obtained by Rutherford backscattering spectroscopy with 900 keV α-particles. At 80 K, the bilayer mixing rates cannot be reproduced by purely ballistic mixing; the essentially linear scaling of the bilayer mixing rate with the energy F D deposited at the interface points to local spike formation. A transition to global spike formation seems to be visible for the Pb-irradiations. Additional mixing effects at 300 K are due to radiation enhanced diffusion and scale with √F D. The marker mixing rates at 80 K are reproduced by the ballistic mixing approach, but are equally well described by local spike models. High fluence Xe-irradiations of Sb/Ni bilayers lead to intermetallic phases in the interface region as verified by transmission electron microscopy.
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    Defects in electron irradiated GaP studied by positron lifetime spectroscopy (1995)
    Springer
    Applied physics 60 (1995), S. 541-544 
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    Keywords: 61.70 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Defects induced by electron irradiation were investigated in GaP. The irradiation was performed at 15 K with an incident electron energy of 2 MeV and a fluence of 1018cm−2. Annealing experiments were carried out in the temperature range between 100 and 1000 K. Ga and P vacancies were detected after electron irradiation and the different annealing behaviour of the two types of vacancies was observed. The recovery stage between 100 and 400 K was attributed to the annealing of Ga vacancies and the recovery at temperatures above 900 K to the annealing of P vacancies. We also performed Hall measurements to determine the location of the Fermi level in the bandgap during the annealing. Two different ionization levels of the P vacancy were found which can be attributed to the transitions V P + /V P o and V P o /V P − . Temperature-dependent measurements were performed to study the effect of shallow positron traps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538526
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  • 93
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    Influence of energetic ions on grafting to polyethylene (1996)
    Springer
    Applied physics 63 (1996), S. 441-446 
    Details
    ISSN: 1432-0630
    Keywords: 61.40 ; 61.80 ; 66.30 ; 81.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Li salts of acrylic acid were grafted to polyethylene, PE. It is known that li is mobile in this material at room temperature, and hence can act as a probe for newly introduced defects. After irradiation of PE(Li) with 100 keV He+ ions at different fluences the Li depth distributions were measured by NDP. Changes in the Li distributions are observed which are ascribed to bonding at oxygen, the latter one preferentially penetrating into the PE via the irradiation-damaged sample surface. With increasing sample age, i.e. after exposure to ambient atmosphere for more than half a year, Li appears to lose its original mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01571671
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  • 94
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    Electronic Resource
    Laser dye stability part 1. Flash frequency and fluid filtration effects (1977)
    Springer
    Applied physics 12 (1977), S. 39-44 
    Details
    ISSN: 1432-0630
    Keywords: 78.60 ; 61.80 ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A commercial coaxial xenon flashlamp was used to measure laser dye stability. The output energy of each lasing pulse was recorded and periodic measurements were made of the untuned lasing wavelength, the temporal flashlamp output, and the temporal lasing output. The present study demonstrates that it is possible to have a number of different types of apparent dye laser system “half-lifes” through the use of filtration and frequency of flash parameters. The use of near-zero flash frequency and moderate pore size filters allows a determination of the lifetime that is more representative of the dye as opposed to the lifetime of the dye laser system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900066
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  • 95
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    Rutherford backscattering study of crystal orientation dependent annealing effects in high-dose antimony implanted silicon (1978)
    Springer
    Applied physics 15 (1978), S. 73-78 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High dose implantations (1016 ions/cm2) of antimony in silicon result in concentrations far above the solid solubility of antimony in silicon. Rutherford backscattering was used to study the behaviour of damage and antimony concentration profiles for 〈100〉 and 〈111〉 substrates. The measurements were performed for various annealing treatments, implantation temperatures and implantation energies. A crystal orientation dependent outdiffusion of antimony towards the surface, a highly supersaturated phase of substitutional antimony at 600°C and a strong reverse annealing effect at higher temperatures were found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896893
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  • 96
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    Transmission sputtering yields of gold at 6.8 MeV (1976)
    Springer
    Applied physics 11 (1976), S. 289-293 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmission sputtering yield of gold for 6.8-MeV Au– bombardment has been measured on targets of thicknesses from 250 to ∼ 7000 Å. The results are compared to Sigmund's theory and to recent calculations of deposited-energy depth distributions by Winterbon. Good agreement between experimental data and theory is found except for target thicknesses around 4000 Å, where the experimental yield rises by up to a factor two higher than predicted by theory. This discrepancy is interpreted in terms of collision spikes, which have been observed previously in backsputtering experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00897068
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  • 97
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    The effect of impurities on the lifetime of positrons in voids in molybdenum (1977)
    Springer
    Applied physics 12 (1977), S. 183-185 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Following the work of Thrane, Petersen and Evans which showed that positron lifetimes for voids in molybdenum were independent of void size, it seemed necessary to re-examine earlier results where larger positron lifetimes had been obtained during the annealing of specimens containing voids. This paper outlines the problem and presents the result of an experiment pointing strongly to impurity effects being responsible for the increased values of τ2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896145
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  • 98
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    A simple method for the calculation of energy deposition profiles from range data of implanted ions (1977)
    Springer
    Applied physics 12 (1977), S. 347-353 
    Details
    ISSN: 1432-0630
    Keywords: 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A rectangular approximation of the energy-loss function is used to calculate the initial range distribution of the energy deposited into atomic processes by ion implantation. It is required that range data and three values of the specific energy loss are taken from computed tables available in the literature. The resulting formula can be expressed by the error function and can easily be evaluated by means of an error-function table as well as by simple computation. For implantation into silicon, the results of the approximation differ by about 10% of the maximal energy deposition from the more precise calculations of Brice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886037
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  • 99
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    Outside dislocations generated from phosphorus implanted silicon layers (1978)
    Springer
    Applied physics 17 (1978), S. 31-39 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The growth, movement and nature of outside dislocation, which propagate from heavily phosphorus (〉1015 ions/cm2) implanted (111), (100), and (110) silicon layers into unimplanted outside regions by a compressive strain induced during 1100° C wet O2 annealing, are investigated using transmission electron microscopy and x-ray diffraction topography. Outside dislocations are formed, mainly on (111) planes., by the glide motion of dislocation networks formed in implanted layers during early annealing. This results in dislocations extending into the unimplanted areas to different degrees, in the order of, from the largest to smallest, (111), (110), and (100) wafers. In (110) wafers, the [001] oriented dislocations in the implanted regions rise to the surface at the implant and unimplant boundary. On the other hand, the [110] dislocations penetrate into the unimplanted region. Two sets of orthogonal 〈110〉 oriented dislocations generated in (100) implanted wafers behave in the same manner as the [001] dislocations in (110) wafers. Some sources of the compressive strain related to the generation of these dislocations are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885027
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  • 100
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    High-temperature diffusion of phosphorus and boron in silicon via vacancies or via self-interstitials? (1979)
    Springer
    Applied physics 20 (1979), S. 265-273 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper re-examines the effect of oxidation on the diffusion of phosphorus and boron in silicon as well as recent results on redistribution phenomena of these dopants under irradiation and on the emitter-push effect. It is shown that at high temperatures phosphorus and boron diffuse via a defect mechanism involving silicon self-interstitials. These results support the view-point that self-interstitials are the dominating point defects in silicon under thermal equilibrium conditions. Possible generation mechanisms for the self-interstitial supersaturation causing the emitter-push effect are suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00894994
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