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  • American Institute of Physics (AIP)  (241,959)
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  • 1
    Electronic Resource
    Electronic Resource
    *-structures on braided spaces (1995)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 36 (1995), S. 4436-4449 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: *-structures on quantum and braided spaces of the type defined via an R-matrix are studied. These include q-Minkowski and q-Euclidean spaces as additive braided groups. The duality between the *-braided groups of vectors and covectors is proved and some first applications to braided geometry are made. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.530900
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  • 2
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    0.22 THz wideband sheet electron beam traveling wave tube amplifier: Cold test measurements and beam wave interaction analysis (2012)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2012-09-14
    Description: Anisullah Baig, Diana Gamzina, Robert Barchfeld, Calvin Domier, Larry R. Barnett et al. In this paper, we describe micro-fabrication, RF measurements, and particle-in-cell (PIC) simulation modeling analysis of the 0.22 THz double-vane half period staggered traveling wave tube amplifier (TWTA) circuit. The TWTA slow wave structure comprised of two sections separated by two sever ports l ... [Phys. Plasmas 19, 093110 (2012)] published Thu Sep 13, 2012.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
    Electronic Resource
    Electronic Resource
    0.3-μm-diam bubble material of (BiSmLu)3(FeSc)5O12 grown from PbO-Bi2O3-V2O5 flux (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3485-3487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Garnet films of (BiSmLu)3(FeSc)5O12 supporting 0.3-μm-diam bubbles have been grown on Nd3Ga5O12 substrates by liquid-phase epitaxy using PbO-Bi2O3-V2O5 flux. The uniaxial anisotropy energy in the films can be increased by adding V2O5 to the PbO-Bi2O3 flux. The anisotropy energy of 0.3-μm-diam bubble material of (BiSmLu)3(FeSc)5O12 grown from PbO-Bi2O3-V2O5 flux was 2.9×105 erg/cm3. This value is greater than that of the 0.3-μm-diam bubble material grown from PbO-Bi2O3 flux by about 45%. The content of Bi in the film is increased by adding V2O5 to the PbO-Bi2O3 flux. The increase in the anisotropy energy is considered to be caused by this increase in Bi content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338733
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  • 4
    Electronic Resource
    Electronic Resource
    0.4 μm spatial resolution with 1 GHz (λ=30 cm) evanescent microwave probe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1725-1729 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we describe evanescent field imaging of material nonuniformities with a record resolution of 0.4 μm at 1 GHz (λg/750 000), using a resonant stripline scanning microwave probe. A chemically etched tip is used as a point-like evanescent field emitter and a probe–sample distance modulation is employed to improve the signal-to-noise ratio. Images obtained by evanescent microwave probe, by optical microscope, and by scanning tunneling microscope are presented for comparison. Probe was calibrated to perform quantitative conductivity measurements. The principal factors affecting the ultimate resolution of evanescent microwave probe are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149658
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  • 5
    Electronic Resource
    Electronic Resource
    0.4–3.0-MeV-range Be-ion implantations into InP:Fe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2973-2978 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy (MeV) Be implants in the energy range 0.4–3.0 MeV and dose range 2×1013–6×1014 cm−2 were performed in InP:Fe. Phosphorus coimplantation was used at all Be implant energies and doses to minimize Be redistribution during annealing. For comparison, the Be implant alone was also performed at 1 MeV for a dose of 2×1014 cm−2. The first four moments of the Be implant depth distributions were calculated from the secondary-ion-mass spectrometry (SIMS) data on the as-implanted samples. Variable temperature/time rapid thermal annealing (RTA) cycles were used to activate the Be implant. A maximum of 94% activation was obtained for 875 °C/15-s RTA on the 2-MeV/2×1014-cm−2 Be implant. In contrast to Be-implanted samples, no in-diffusion of Be was observed in Be/P-coimplanted samples. For the annealed samples, two additional Be peaks located at 0.8Rp and 0.9Rp (range) were observed in the SIMS depth profiles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349324
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  • 6
    Electronic Resource
    Electronic Resource
    0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 587-589 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A second-order diffraction grating placed below the active region of a phase-locked resonant antiguided array selects the in-phase array mode in addition to its role as a single-longitudinal-mode selector. This type of array-mode discrimination relies on the fact that the resonant in-phase array mode has significantly better field overlap with the grating region than nonresonant array modes. Furthermore, it eliminates the need for a conventional array-mode discriminator: interelement loss; which can cause self-pulsations. Diffraction-limited beam and single-frequency operation is obtained to at least 0.45 W peak pulsed power from 20 element, InGaAs/InGaP/GaAs structures (λ=0.97 μm) of 120-μm-wide aperture. Distributed-feedback operation is confirmed over the 20–40 °C temperature range. The results are in good agreement with theory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121864
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  • 7
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    0.7BiFeO-0.3BaTiO-YFeO composites with simultaneously improved electrical and magnetic properties (2012)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2012-01-26
    Description: Haibo Yang, Qingqing Ke, Huayan Si, and Jingsheng Chen 0.7BiFeO-0.3BaTiO-YFeO (BFO-BTO-YIG) composites were synthesized via a modified solid-sate route. The phase composition, microstructure, electrical, and magnetic properties of the composites were investigated. The results show that the BFO-BTO and YIG phases can coexist in the composites without any ... [J. Appl. Phys. 111, 024104 (2012)] published Wed Jan 25, 2012.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
    Electronic Resource
    Electronic Resource
    0.8 eV excitation of the quenched EL2* level in semi-insulating GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2221-2222 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitation with 0.8 eV of the optically bleached state of semi-insulating GaAs results in a recovery of the 1–1.3 eV photocurrent. This recovery is found to occur in the advanced stages of the photoquenching with 1.1-eV light, when both the extrinsic and the intrinsic photocurrent are quenched. Such an observation is related to the existence of different metastable configurations, which are characterized by different optical sensitivities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344274
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  • 9
    Electronic Resource
    Electronic Resource
    (001) faceting and Bi2Sr2CuO6+x(Tc=7–22 K) phase formation at the Ag/Bi-Sr-Ca-Cu-O interface in Ag-clad Bi2Sr2CaCu2O8+x(Tc=75–95 K) superconducting tapes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1234-1236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Ag/Bi-Sr-Ca-Cu-O (BSCCO) interface in Ag-clad Bi-2212 tapes was investigated by high-resolution transmission electron microscopy. The interface was found to be well bonded and free of nonsuperconducting second phases. However, a one-half-unit-cell-thick layer of the Bi-2201 phase was observed between the Bi-2212 phase and the Ag-cladding. A very strong texturing of the (001) planes of the BSCCO parallel to the Ag was seen. When the interface was nearly parallel to the Bi-2212 (001) planes, it tended to facet onto (001), leaving steps of height equal to one-half the Bi-2201 lattice spacing. Thus, strong (001) texturing extends to the atomic scale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107605
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  • 10
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    (001) FePt graded media with PtMn underlayers (2011)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2011-11-24
    Description: Chao-Chien Chiang, Wu-Chang Tsai, Liang-Wei Wang, Hao-Cheng Hou, Jung-Wei Liao et al. (001)-oriented FePt graded media are obtained by using PtMn underlayers. The PtMn underlayer not only behaves as the (001) structural template but provides the diffusion source of Mn. The diffusion of Mn into FePt reduces its anisotropy but, on the other hand, the exchange coupling between antiferro ... [Appl. Phys. Lett. 99, 212504 (2011)] published Wed Nov 23, 2011.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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