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  • Articles  (162)
  • 61.70  (162)
  • Springer  (162)
  • Physics  (162)
  • 1
    Electronic Resource
    Electronic Resource
    Positron diffusion in solids and the reconstruction of inhomogeneous defect distributions from lifetime measurements (1996)
    Springer
    Applied physics 63 (1996), S. 227-235 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 66.30 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The time dependent diffusion trapping equations for positrons implanted into inhomogeneous solids are analyzed. This problem is of central importance in the study of polycrystalline materials and for the application of pulsed positron beams to defect studies in materials research. The main problem in previous investigations was the necessity to solve the time-dependent diffusion equation. It prevented analytical treatment in all but the simplest applications. For the first time this difficulty is eliminated by invoking a new concept, the observable local annihilation characteristics for local implantation of positrons into the thermalized ensemble. It will be shown that the local annihilation characteristics are governed by field equations which reduce to the well known quantities of the standard trapping model in the case of homogeneous defect distributions. Furthermore, inhomogeneous defect distributions are uniquely determined from the field equations provided the local annihilation characteristics are known. Analytical solutions are derived and applied successfully to recent experimental results for a selection of simple, but realistic problems. The formal procedure includes internal drift fields and could be extended to cover also the epithermal period of positron thermalization, if necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567874
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  • 2
    Electronic Resource
    Electronic Resource
    High-temperature structure of C60 (1996)
    Springer
    Applied physics 62 (1996), S. 295-301 
    Details
    ISSN: 1432-0630
    Keywords: 61.16 ; 61.70 ; 65.00
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-purity C60 has been studied by in situ X-Ray Diffraction (XRD). Between 300 and 900 K, the volume thermal expansion coefficient isα v = 4.57(4) × 10−5 K−1 with no observable deviations from linearity. Recrystallization is activated atT ≥ 600 K, as observed by the fast ( 〈 5 s) and slow ( 〉 10 min) variations in low-index Bragg intensities. At lower temperatures, thermal desorption of molecular oxygen at ≈420 K is accompanied with a step-wise increase of the 111-Bragg reflection intensity, but with no measurable change of the lattice parameter. The twin fault density has first been determined using high-resolution XRD. The (winning probability is 0.8%. Crystallites show a ± 0.3° intrinsic mosaic spread. Mechanical milling in acetone and in air increases the twinning probability to 1.8 and 3.1%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01594226
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  • 3
    Electronic Resource
    Electronic Resource
    Using positron 2D-ACAR as a probe of point defects in GaAs: The As vacancy as a case study (1996)
    Springer
    Applied physics 62 (1996), S. 529-532 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two-Dimensional Angular Correlation of positron Annihilation Radiation (2D-ACAR) experiments have been performed on n-type GaAs. By combining these results with those from positron lifetime experiments, the momentum distribution of the arsenic vacancy in its neutral (V aAs 0 ) and negative (V As − ) charge states have been extracted. These distributions were all normalized to the respective positron lifetime that characterizes them. The first thing to be noticed is that the momentum distributions of the vacancies, as seen by the positron, are fairly isotropic and structureless. The distribution forV As 0 is more peaked than that ofV As − while the latter is more intense in the large momentum regions of the spectra. From this, it can be inferred that VA. has a smaller open volume thanV As 0 A closer look at the momentum distribution of the vacancies reveals that they are not entirely isotropic, but, in fact, have a bulk-like component. Finally, the experimental results for bulk GaAs andV As − compare well in a qualitative manner with the momentum distributions that result from an ab-initio molecular dynamics calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01571688
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  • 4
    Electronic Resource
    Electronic Resource
    Stochastic dislocation patterning during cyclic plastic deformation (1996)
    Springer
    Applied physics 63 (1996), S. 45-55 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 62.20 ; 81.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A dislocation dynamical theory is developed for the formation of dipole dislocation patterns during cyclic plastic deformation in single glide. The stochastic dislocation dynamics adopted is suitable to account, in terms of a fluctuating effective medium, for the effects of long-range dislocation interactions on a mesoscopic scale. The theory can explain the occurrence of a matrix structure and persistent slip bands as a result of evolutionary processes, it gives the intrinsic strain amplitudes and the characteristic wavelength of these structures, and it allows for an interpretation of the structural changes associated with changes of the deformation conditions. Quantitative results are in good agreement with experimental observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01579745
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  • 5
    Electronic Resource
    Electronic Resource
    A study of thermal and mechanical effects on materials induced by pulsed laser drilling (1996)
    Springer
    Applied physics 63 (1996), S. 93-101 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 81.40 Z ; 81.60 Z ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Holes drilled in metals and silicon using different short-pulse lasers (copper vapour, Nd : YLF and titanium : sapphire) were characterized under optical and electron microscopy. The aim was to analyze and compare the thermal and mechanical effects on materials induced by laser drilling with a wide range of pulse widths (50 ns to 200 fs) and power densities (108 W/cm2 to 1015 W/cm2). Heat affected structural zones around micro-holes drilled in cold-rolled copper were revealed by analyzing ion-polished hole sections in the scanning electron microscope using electron channelling contrast. The heat affected zones were found to have a maximum width of 5 μm to 10 μm, independent of the duration of the pulses. Mechanically and thermally induced deformations and slip phenomena, including “prismatic punching”, were observed in laser-drilled molybdenum monocrystals. The dislocation arrangement which developed during laser drilling of silicon monocrystals was visualized by transmission electron microscopy. The microscopic studies showed that for percussion drilling in the high fluence range characterized by high ablation rates of a few micrometres per pulse the use of shorter pulses (τH〈50 ns) did not lead to any appreciable reduction in the melt component, material re-deposition or thermal load on the wall of the hole. In addition, the increasing mechanical loads on the material due to the higher pressure in the drill channel becomes a limiting factor for the precision of the processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567635
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  • 6
    Electronic Resource
    Electronic Resource
    Two groups of misfit dislocations in GaAs on Si (1996)
    Springer
    Applied physics 63 (1996), S. 359-370 
    Details
    ISSN: 1432-0630
    Keywords: 61.14 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-resolution cross-sectional and conventional plan-view transmission electron microscope observations have been carried out for molecular beam epitaxially grown GaAs films on vicinal Si (001) before and after annealing as a function of film thicknesses and observation directions between two orthogonal 〈110〉 directions. Two groups of misfit dislocations are characterized at the interface regions between GaAs and Si by analyzing whether their extra half planes exist in the film or the substrate side. Group I misfit dislocations due to stress caused by a lattice misfit between GaAs and Si consist of partial dislocations and 60° and 90° complete dislocations in an as-grown state. With an increase in the film thickness, partial dislocations decrease and complete dislocations increase. After annealing, partial dislocations almost completely disappear and 90° perfect dislocations are predominantly observed. Group II misfit dislocations due to thermal-expansion misfit-induced stress are all 60°-type complete dislocations regardless of film thicknesses and annealing treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567327
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  • 7
    Electronic Resource
    Electronic Resource
    Transmission of positrons with aβ + energy distribution through thin films (1996)
    Springer
    Applied physics 63 (1996), S. 299-301 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 68.55 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmission through Al foils of isotropically implanted positrons from a22Naβ + source has been measured. It is shown that the transmission is reasonably well-described using an exponential profile once backscattering is accounted for, except for thicknesses below approximately 7 mg/cm2. Below this thickness, the measured transmission is slightly less than that predicted by the exponential profile. Such a deviation has previously been observed for collimated positrons, suggesting that the implantation profile has no significant dependence on the spatial distribution of the incident positrons. This deviation is critical for the proper interpretation of positron lifetime experiments on thin films using a conventional positron lifetime spectrometer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567885
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  • 8
    Electronic Resource
    Electronic Resource
    Electron-microscopy study of Fe-implanted InP (1996)
    Springer
    Applied physics 62 (1996), S. 65-72 
    Details
    ISSN: 1432-0630
    Keywords: 07.80 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract InP implanted with 200 keV Fe ions to a dose of 1 × 1014 atoms/cm2 has been investigated by Transmission Electron Microscopy (TEM). The as-implanted sample exhibits an amorphous surface region. At the annealing temperature of 650°C, nearly complete solidphase epitaxial regrowth is achieved only for annealing times greater than 1.5 h. For annealing times up to 2 h, however, the samples still contain extended defects such as stacking-fault tetrahedra of vacancy-type and dislocation loops of interstitial-type, mostly concentrated in a band which corresponds to the region of transition between amorphous top layer and crystalline substrate, as was detected in the as-implanted sample. Stacking-fault tetrahedra and loops have also been observed above and below this band, respectively. The origin of these defects is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01568089
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  • 9
    Electronic Resource
    Electronic Resource
    A study of thermal and mechanical effects on materials induced by pulsed laser drilling (1996)
    Springer
    Applied physics 63 (1996), S. 93-101 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 Z ; 81.60 Z ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Holes drilled in metals and silicon using different short-pulse lasers (copper vapour, Nd : YLF and titanium: sapphire) were characterized under optical and electron microscopy. The aim was to analyze and compare the thermal and mechanical effects on materials induced by laser drilling with a wide range of pulse widths (50 ns to 200 fs) and power densities (108 W/cm2 to 1015 W/cm2). Heat affected structural zones around micro-holes drilled in cold-rolled copper were revealed by analyzing ion-polished hole sections in the scanning electron microscope using electron channelling contrast. The heat affected zones were found to have a maximum width of 5 μm to 10 μm, independent of the duration of the pulses. Mechanically and thermally induced deformations and slip phenomena, including “prismatic punching”, were observed in laser-drilled molybdenum monocrystals. The dislocation arrangement which developed during laser drilling of silicon monocrystals was visualized by transmission electron microscopy. The microscopic studies showed that for percussion drilling in the high fluence range characterized by high ablation rates of a few micrometres per pulse the use of shorter pulses (τH 〈 50 ns) did not lead to any appreciable reduction in the melt component, material re-deposition or thermal load on the wall of the hole. In addition, the increasing mechanical loads on the material due to the higher pressure in the drill channel becomes a limiting factor for the precision of the processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567635
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  • 10
    Electronic Resource
    Electronic Resource
    Nature of the surface layer in ABO3-type perovskites at elevated temperatures (1996)
    Springer
    Applied physics 62 (1996), S. 335-343 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 77.84
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract X-ray diffraction measurements showed that in the surface layer of perovskite structure BaTiO3, SrTiO3, PbTiO3 and KNbO3 crystals at elevated temperatures (500–1000°C) reactions take place in the solid phase, associated with segregation in the direction to the surface of AO complexes, leading to the formation of a whole homologue series of crystalline compounds with the general formula AO · (ABO3) n ,n = l, 2,....., 10, ∞ Lowered oxygen partial pressure may inhibit the segregation processes and in the range of temperatures for which vaporisation of the AO complexes from the surface does not yet take place a suitable choice of oxygen pressure may lead to resynthesis of the compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01594231
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  • 11
    Electronic Resource
    Electronic Resource
    On the recombination behaviour of iron in moderately boron-doped p-type silicon (1996)
    Springer
    Applied physics 62 (1996), S. 345-353 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 72.20 ; 72.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atE v +0.1 eV and the donor level of FeB pairs atE c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014–1016 cm−3 supposing theE c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01594232
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  • 12
    Electronic Resource
    Electronic Resource
    Three-valence charge-transport model for explanation of the photorefractive effect (1995)
    Springer
    Applied physics 61 (1995), S. 27-32 
    Details
    ISSN: 1432-0649
    Keywords: 61.70 ; 72.40 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A new charge-transport model assuming one center in three different valence states is discussed for explanation of the photorefractive effect. Quantitative description of experimental results in KNb03:Fe by the model is demonstrated. Many similarities with the so-called “two-center” model are found although the microscopic explanation of the light-induced charge transport is rather different.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01090968
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  • 13
    Electronic Resource
    Electronic Resource
    Intrinsic photorefractive centers in LiNbO3:Fe (1995)
    Springer
    Applied physics 61 (1995), S. 89-93 
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    ISSN: 1432-0649
    Keywords: 61.70 ; 72.20 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In LiNbO3:Fe,Me crystals (Me = K, Mg, Zn) elementary holograms are recorded and erased with frequency-doubled, ordinarily polarized pulses of a Q-switched Nd:YAG laser. At high light intensities (I 〉 109 Wm−2) holographic sensitivities and saturation values of refractive index changes grow with increasing intensity and a contribution to photo-conductivity appears increasing quadratically withI. The intensity-dependent parts of the holographic quantities are diminished by increasing the lithium content of the samples or by doping the crystals with magnesium or zinc. Experimental results can be described by a two-center charge transport model, which is the Fe2+/3+ model supplemented by shallow traps, namely niobium ions occupying lithium sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01090977
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  • 14
    Electronic Resource
    Electronic Resource
    Investigations of As-antisite-related defects in GaAs (1995)
    Springer
    Applied physics 60 (1995), S. 551-555 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optically Detected Magnetic Resonance (ODMR) is a powerful tool to study paramagnetic defects in semiconductors. As an example for the successful application of various methods based on ODMR, investigations of As antisite-related defects in GaAs are presented. Information about defect properties such as their microscopic structure, their metastability and thermal stability can be obtained by ODMR which was measured via the Magnetic Circular Dichroism of the optical Absorption (MCDA). Low temperature irradiation of GaAs (4.2 K) with 2 MeV electrons produces the Ga vacancy and some new As antisite-related defects. Annealing steps were investigated at 77 K and above. At 77 K the isolated As antisite defect is detected if semi-insulating (si) GaAs was irradiated. Between 200 K and 300 K the Ga vacancy decays. Its decay is correlated to the formation of an anti-structure pair. A second annealing step was found at about 520 K. There the anti-structure pair decays. EL2 is formed at that temperature if si material was irradiated, but this EL2 formation is not correlated with the anti-structure pair decay. We performed also magneto-optical measurements to investigate the metastability properties of the three As antisite-related defects. They all show metastability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538528
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  • 15
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    Irradiation-induced atomic defects in SiC studied by positron annihilation (1995)
    Springer
    Applied physics 61 (1995), S. 51-53 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The present paper reports on positron lifetime measurements on atomic defects in SiC after low-temperature (80 K) electron irradiation of low (0.47 MeV) and high (2.5 MeV) electron energies and doses from 1.8×1017 to 1.9×1019 e/cm2 as well as after subsequent isochronal annealing up to 1900 K. For these studies the single crystals of nitrogen doped (2–3×1018 cm−3) SiC grown by a modified Lely technique with hexagonal structure (6H polytype) were used. According to the positron lifetime measurements, very different types of vacancy-like positron traps are introducted after irradiation with electrons of either low or high energy. The formation of defect agglomerates and their decay at high temperatures is studied during isochronal annealing and related to earlier studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538210
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  • 16
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    Positron lifetime and 2D-ACAR studies of divacancies in Si (1995)
    Springer
    Applied physics 61 (1995), S. 65-70 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have measured positron lifetime and Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) distributions of Floating-Zone grown (FZ) Si specimens containing divacancies (V2) with the definite charge states, V 2 0 , V 2 −1 or V 2 −2 from room temperature to about 10 K. These charge states are accomplished by an appropriate combination of dopant species, their concentration and irradiation doses of 15 MeV electrons. with reference to the currently accepted ionization level of divacancies. The positron lifetime of the negatively charged divacancy increases with temperature, while that of the neutral divacancy shows little change with temperature. The positron trapping rate, obtained from lifetime and 2D-ACAR measurements, increases markedly with decreasing temperature. This is found not only for the negative divacancies but also for the neutral divacancy. We need a model which explains this temperature dependence. The 2D-ACAR distribution from positrons trapped at divacancies shows nearly the same distribution for the different charge states, which differs considerably from the case of As vacancies in GaAs studied by Ambigapathy et al. We have observed a small but definite anisotropy in the distribution of trapped positrons in V 2 − using a specimen containing oriented divacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538213
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  • 17
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    Investigations of positron lifetimes in InP with a pulsed positron beam (1995)
    Springer
    Applied physics 61 (1995), S. 321-324 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Indium Phosphide layers grown by gas source Molecular Beam Epitaxy, (MBE) have been studied by positron lifetime spectroscopy using the recently modified pulsed positron beam in Munich. The as-grown samples are known to be phosphorous rich and contain a high concentration of vacancy-type defects. On annealing, phosphorous precipitates are formed and the concentration of free volume defects increases. Positron lifetime spectroscopy has identified the grown in defects to be indium vacancies at a concentration around 1018cm−3. The dominant defects after annealing exhibit a positron lifetime characteristic of divacancies and are present at concentrations in excess of 5×1019cm−3.
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    URL: http://dx.doi.org/10.1007/BF01538197
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  • 18
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    Microstructural evolution of ZnS during sintering monitored by optical and positron annihilation techniques (1995)
    Springer
    Applied physics 61 (1995), S. 217-220 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron lifetime and optical absorption techniques were employed to track the microstructural evolution of polycrystalline ZnS grown by Chemical Vapor Deposition (CVD). As grown material and material treated with Hot Isostatic Pressure (HIP) was sintered at temperatures ranging from 400 to 1000°C for 2–18 h. A 290 ps defect lifetime could be resolved in all samples, while an additional longer lifetime (τ=430 ps) was found only in samples annealed at low temperatures. This component gradually disappeared during annealing at 800°C. Associated with the disappearance of the long-lived component, the apparent bulk lifetime of the material changed from 235 to 215 ps. A 215±2 ps bulk parameter was also found for HIP-treated material annealed at temperatures greater than 400°C and hence is taken to represent the delocalized state of the positrons in ZnS. Optical absorption measurements showed that annealing at 800°C also caused the absorption profiles of the CVD and HIP samples to converge. The rate of the bulk lifetime transition correlates with the absorption changes. The observed sharpening of the absorption profile is attributed to a decrease in scattering from grain boundaries and voids, and a decrease in absorption from point defects. The 430 ps lifetime is believed to be due to trapping at voids and grain boundaries, while the 290 ps lifetime likely is due to a monovacancy stabilized as a small complex.
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    URL: http://dx.doi.org/10.1007/BF01538393
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  • 19
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    Intrinsic and extrinsic defects in semiconductors studied by perturbed γγ angular correlation spectroscopy (1995)
    Springer
    Applied physics 61 (1995), S. 207-212 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40 ; 76.00
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The application of the perturbed γγ angular correlation technique as an analytical tool for the characterisation of atomic defect configurations is discussed. Using the radioactive probe atom111In/111Cd, recent results on the compensation of acceptor and donor atoms in different II–VI semiconductors will be discussed, in particular the role of the cation vacancy defect.
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    URL: http://dx.doi.org/10.1007/BF01538391
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  • 20
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    On the interpretation of positron-annihilation data in powders and fine-grained materials (1995)
    Springer
    Applied physics 61 (1995), S. 203-206 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Monte-Carlo simulations of positron diffusion are carried out for powders consisting of spherical and ellipsoidal particles with and without defects. Following Bergersen et al. [1], elastic positron-phonon interaction is considered to be dominant for scattering processes in positron diffusion. The central question is which fraction of the positrons would be able to reach the particle boundaries. Hence, we calculate the Fraction of Positrons reaching particle Surface (FPS). The presence of defects in the particles can drastically reduce FPS depending on the defect concentration and capture rate. We demonstrate that for small-grained materials the grain surface can influence the lifetime signal significantly.
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    URL: http://dx.doi.org/10.1007/BF01538390
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  • 21
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    Antimony thin-film transport properties and size effect (1995)
    Springer
    Applied physics 60 (1995), S. 87-91 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Antimony thin films were vacuum deposited on glass substrates at room temperature. X-ray structural studies were performed. The thickness dependence of both the de electrical resistivity and the Hall coefficient were earried out at room temperature over a thickness range from 29 nm to 216 nm. The type of conduction, the concentration and the mobility of charge carriers were revealed. Analysis incorporating the electrical resistivity and the Hall effect data has led to the determination of the specular and non-specular size-effect parameters. Parameters such as the bulk resistivity (ϱ 0), bulk mean free path (λ 0), grain-boundary transmission coefficient (t), external surface parameters (U), surface scattering factor (p) and grain-boundary parameter (V), were all evaluated without using any adjusting parameters. Beside the background contribution to the film resistivity, an estimation of the contribution of the surface and grain-boundary to the film resistivity was also carried out.
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    Rapid thermal diffusion of aluminum in silicon and its interaction with phosphorus (1995)
    Springer
    Applied physics 60 (1995), S. 61-65 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Aluminum diffusion profiles in silicon were produced under rapid thermal processing conditions using a Si-sandwich structure to avoid losses of aluminum by reaction with the quartz reactor. The impact of phosphorus on the diffusion behaviour of aluminum was investigated by predeposition of P into Al-diffused wafers and vice versa. Dopant profiles were determined by SIMS (Secondary-Ion-Mass Spectroscopy), electrochemical CV-and SRP (Spreading Resistance) analysis. The resulting profiles after Al predeposition at 1293 K exhibit high Al-surface concentrations up to the solid solubility limit of about 2×1025 m−3. It is shown that phosphorus has a great influence on the drivein behaviour of Al, leading to an accelerated Al diffusion in front of the P profile (enhanced Al diffusion caused by self-interstitial supersaturation) and an “up-hill migration” of Al in the high-concentration regime, which can be explained by field-assisted diffusion. A strong retardation of aluminum diffusion combined with concentrations well above the solidsolubility limit was observed during the Al predeposition into P-diffused wafers.
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    Defects in electron irradiated GaP studied by positron lifetime spectroscopy (1995)
    Springer
    Applied physics 60 (1995), S. 541-544 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Defects induced by electron irradiation were investigated in GaP. The irradiation was performed at 15 K with an incident electron energy of 2 MeV and a fluence of 1018cm−2. Annealing experiments were carried out in the temperature range between 100 and 1000 K. Ga and P vacancies were detected after electron irradiation and the different annealing behaviour of the two types of vacancies was observed. The recovery stage between 100 and 400 K was attributed to the annealing of Ga vacancies and the recovery at temperatures above 900 K to the annealing of P vacancies. We also performed Hall measurements to determine the location of the Fermi level in the bandgap during the annealing. Two different ionization levels of the P vacancy were found which can be attributed to the transitions V P + /V P o and V P o /V P − . Temperature-dependent measurements were performed to study the effect of shallow positron traps.
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    On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects (1995)
    Springer
    Applied physics 61 (1995), S. 397-405 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.70 ; 66.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV Ga 2− and the triply positively charged defect complex (ASGa+V As)3+, with AsGa being the antisite defect of an As atom occupying a Ga site andV As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV Ga 2− /(AsGa+V As)3+ is supposed to be able to pin the GaAs Fermi level at approximately theE v +0.6 eV level position, which requires that the net free energy of theV Ga/(AsGa+V As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE v +1.2 eV level position instead of the neededE v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.
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    An investigation of point defects in silicon carbide (1995)
    Springer
    Applied physics 61 (1995), S. 55-58 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 68.55 ; 78.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron lifetime measurement on bulk samples of single crystal SiC wafers have shown that both 6H and 4H polytypes exhibit a bulk lifetime of 150±2ps. All samples contained a second, defect-related lifetime component, ranging in value from 250 to about 300 ps with rather low intensities. The defect structure exhibited by the nanocrystalline samples is, not unexpectedly, much more complex. Positron beam experiments on Electron Cyclotron Resonance Chemical Vapour Deposited (ECR-CVD) SiC thin films showed that the positrons are very sensitive to changes in important film parameters as a function of the deposition conditions. It was found that the film density is lower than expected, probably due to hydrogen incorporation; variations in compositions among different films were detected through variations in theS parameters, and differences were observed in the electric field at the film-substrate interface due to hydrogen passivation of dangling bonds and different substrate resistivities.
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    High-resolution diffraction-space mapping and topography (1994)
    Springer
    Applied physics 58 (1994), S. 121-127 
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    ISSN: 1432-0630
    Keywords: 07.85 ; 68.55 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The importance of collecting the distribution of scattered X-rays in two dimensions with the “right probe” will be addressed. The data-collection method will be briefly covered and how this greatly assists the interpretation of structural features giving rise to the distributed X-ray scattering. The combination of diffraction-space mapping with multiple crystal topography will also be presented to show how any region of scattering can be related to lateral structural changes or crystal imperfections. The simulation of the diffraction profiles of structures with defects will be addressed as well as the interpretation of “unusual and strange” diffraction features observed in high resolution, which yield further useful information on the materials under study.
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    Infrared holographic recording in LiNbO3:Cu (1994)
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    Applied physics 58 (1994), S. 191-195 
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    ISSN: 1432-0630
    Keywords: 42.40 ; 78.20 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Holograms may be recorded in photorefractive LiNbO3:Cu with pulsed infrared light (wavelength λ=1064 nm, Q-switched Nd:YAG laser), if the crystals are previously or simultaneously illuminated with a green (λ=532 nm) light pulse. We study refractive index changes and time constants of as-grown and thermally treated crystals with different copper concentrations. A model explaining this effect is discussed.
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    Positron annihilation in the quenched and electron-irradiated NiSb intermetallic compound (1994)
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    Applied physics 59 (1994), S. 163-168 
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    ISSN: 1432-0630
    Keywords: 78.70. Bj ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Samples of the near equiatomic NiSb compound were irradiated by 3 MeV electrons at 20 K or quenched from 1103 K and 1333 K and subsequently annealed isochronally. The behaviour of defects created by quench or irradiation were studied by the positron annihilation technique. Only one recovery stage was found around 425 K for quenched specimens, but two distinct stages (100 K and 425 K) were observed after irradiation. The 425 K stage is ascribed to the migration of Ni vacancies giving dislocation loops. The recombination of mobile interstitials with vacancies after irradiation is assumed to occur between 100 K and 250 K. Doppler broadening and lifetime variations of positrons as a function of the measuring temperature in these irradiation samples are discussed.
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    Photorefractive properties of ruthenium-doped potassium niobate (1994)
    Springer
    Applied physics 59 (1994), S. 563-567 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 72.40 ; 78.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Photoconductivities and photovoltaic currents of ruthenium-doped KNbO3 are orders of magnitude larger than that of undoped and ion-doped crystals. KNbO3:Ru is very sensitive for holographic recording with red light and the photovoltaic current increases sublinearly with light intensity.
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    Copper as an electron trap in GaAs0.6P0.4 (1994)
    Springer
    Applied physics 59 (1994), S. 245-251 
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    ISSN: 1432-0630
    Keywords: 71.00 ; 61.70
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    Notes: Abstract An electron trap having an energy level of 0.14 eV from the conduction band edge was found in the bulk of copper-diffused VPE-grown n-GaAs0.6P0.4 by conventional DLTS measurements and by pulse-duration dependent capacitance amplitude measurements. The capture cross section at room temperature is about 1.0×10−21 cm2 and has a weak temperature dependence. These properties are attributed to a non-repulsive center having a capturing mechanism which involves multiphonon emission processes with hardly any lattice relaxation. Evolution of the spatial distributions of the traps with time under junction electric field were studied. The results suggest that the trap is positively charged and has a high diffusivity under electric field. The center can thus be identified as positively charged interstitial copper ion rather than some form of copper complexes.
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    Observation of the early stages of growth and the formation of growth spirals in epitaxial YBa2Cu3O7-δ thin films by AFM (1994)
    Springer
    Applied physics 59 (1994), S. 49-56 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70 ; 74.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ultrathin epitaxial films of YBa2Cu3O7−δ on SrTiO3 prepared by Direct Current (DC) sputtering and pulsed laser deposition were imaged by Atomic Force Microscopy (AFM) to follow the different stages of growth of the thin films. Series of films with thicknesses between 1.2 nm and 12 nm (1–10 monolayers of YBa2Cu3O7−δ) were prepared under identical conditions, optimized with respect to electrical and structural properties, to obtain information on the mechanisms responsible for the formation of growth spirals which are commonly observed in films having a thickness of several 10 nm or more. It could be shown that few layers are formed by a layered growth mode where material is attached laterally to 2D islands which are only one c-axis unit cell in height. In a later stage of growth when about 8–10 layers have been formed, the growth process changes to a mode which is mediated by growth spirals. This could be directly monitored in the AFM images where different defect structures like vertically sheared growth fronts and dendrite-like terraces of stacked islands as well as the resulting growth spirals could be identified.
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    Structural geometry of grain boundaries in icosahedral quasicrystals (1994)
    Springer
    The European physical journal 95 (1994), S. 321-326 
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    ISSN: 1434-6036
    Keywords: 61.70
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    Topics: Physics
    Notes: Abstract The structural geometry of grain boundaries in icosahedral quasicrystals is theoretically examined. So, basic geometric characteristics of such boundaries are found which are related to positions of adjacent quasicrystalline grains. It is shown that grain boundaries in icosahedral quasicrystals represent new-type incommensurate condensed media which are characterized by the quasiperiodic translational order with (in general) unusually high vector basis dimension. Geometric features of grain boundary dislocations in icosahedral quasicrystals are also examined.
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    Dark build-up of holograms in BaTiO3 after recording (1993)
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    Applied physics 57 (1993), S. 437-440 
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    Keywords: 78.20 ; 61.70 ; 72.40
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    Notes: Abstract Holograms recorded under suitable conditions in photorefractive BaTiO3 exhibit an unusual dark build-up. The diffraction efficiency increases by some orders of magnitude after the recording beams are switched off, and then steadily decreases afterwards. An interpretation of this effect in terms of a two-center charge transport model is given.
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    Heat “superemission” and nucleation-front propagation under laser-induced crystallization of thin amorphous films (1993)
    Springer
    Applied physics 57 (1993), S. 561-566 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 68.35 ; 81.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The laser-induced solid-state explosive nucleation in amorphous media is studied analytically. The shapes of the temperature switching wave and that of the nucleation front as well as the formula for the front velocity are derived considering also self-consistent medium deformation. Two conditions of explosive nucleation reflecting the roles of latent heat emission and of deformation are formulated. It is shown that, in explosive nucleation, the rate of internal heat emission is proportional to the square of the latent crystallization heat (“superemission”) in analogy to photon superradiance in initially inverted two-level atomic systems.
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    High-resolution electron microscopy of heterostructures and interfaces (1993)
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    Applied physics 57 (1993), S. 377-383 
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    ISSN: 1432-0630
    Keywords: 07.80 ; 61.70 ; 81.10 ; 85.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-resolution transmission electron microscopy (HREM) allows to study a wide range of device-relevant topics in heteroepitaxial layer structures. Quantitative HREM may be used to obtain chemical information on a near-atomic scale from interfacial transition zones. The physical background is described and demonstrated on several examples in the Al x Gal1−x As/GaAs system. The HREM contrast of antiphase boundaries in InP grown on Si was studied by image simulations and has been compared to experimental images. Silicon carbide precipitates were identified by HREM at the homoepitaxial Si/Si interface. They stem from carbon contamination prior to Si layer growth.
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    Characterization of MOVPE-grown GaAs layers by C-V analysis (1993)
    Springer
    Applied physics 56 (1993), S. 69-72 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
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    Notes: Abstract A computer simulation study of the capacitance of a surface space charge layer in undoped n-GaAs grown by metalorganic vapour phase epitaxy is presented. The effect of the deep donor level EL2 on the surface capacitance of epilayers with an ideal free surface is estimated. In order to approach the as-grown layer surface the model used is extended considering MIS and Schottky-barrier structures and their voltage-capacitance curves are analysed. The theoretical C-V dependences are compared with experimental C-V curves of a real structure including N+-GaAs substrate, undoped n-GaAs epitaxial layer containing EL2 levels and thin native oxide. Conditions are determined at which the EL2 levels as well as the native oxide film may influence the capacitance characteristics.
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    On the magnetic after-effect (MAE) in magnetite at high temperatures (1993)
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    Applied physics 56 (1993), S. 323-327 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 75.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the magnetic after-effect in magnetite have been made in the temperature range 200 to 600 K. Important relaxation peaks have been observed in the temperature range 250 to 350 K (peak III) and 400 to 550 K (peak I). A study of both the dynamics and the parameters of the defects are consistent with an interpretation of peak III and peak I in magnetite as a combined after-effect due to octahedrally coordinated vacancies.
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    Raman spectroscopy of macroscopic defects of GaAs grown by molecular beam epitaxy (1993)
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    Applied physics 56 (1993), S. 571-574 
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    ISSN: 1432-0630
    Keywords: 78.30 ; 68.55 ; 61.70
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    Notes: Abstract Macroscopic defects of the GaAs surface grown by molecular beam epitaxy (MBE) have been investigated by using a micro-probing method of Raman spectroscopy. Especially, the oval defects, the most common macroscopic defects in MBE GaAs, were focused in this study. In Raman spectroscopy for the oval defect on the (100)GaAs surface, TO phonon mode of the 269 cm−1 peak was observed. This indicates that the oval defects can include the (111) growth direction or the amorphized surface. The TO/LO intensity ratios for the defects are in the range from 0.3 to 1.0. In the sample grown under the condition that the substrate temperature is 580° C with the As/Ga ratio of 20, the density of the oval defects is about 200 cm−2 at a growth thickness of 5 μm. With increasing thickness of the epilayer, the density and the size of the α-tye oval defect increased, while the TO/LO ratio decreased. From the spatial measurement by Raman spectroscopy for the α-type oval defect, it is supposed that the α-type oval defect remains in a rather good crystalline state and its orientation along the (100) growth direction is much closer to the (111) direction, but the growth direction of the defect might tend toward the (100) direction with a thicker layer.
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    TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon (1992)
    Springer
    Applied physics 54 (1992), S. 124-131 
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    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
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    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
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    High-temperature thermal evolution of SiAs precipitates in silicon (1992)
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    Applied physics 54 (1992), S. 221-224 
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    Keywords: 61.70 ; 64 ; 72.20
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    Notes: Abstract The thermal evolution of monoclinic SiAs precipitates at 1050° C in silicon samples implanted with 1 and 1.5×1017 As/cm2 was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3×1021 cm−3 at 1050° C.
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    Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100) (1992)
    Springer
    Applied physics 54 (1992), S. 265-269 
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    ISSN: 1432-0630
    Keywords: 68.55 ; 61.16D ; 61.70
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    Notes: Abstract We have used STM to study the surface morphology of thin epitaxial Ge films grown on Si(001) in the presence of the “surfactant” As. The surfactant forces layer-by-layer growth up to 12 ML Ge coverage which could partly be explained by the geometrical surface arrangement of the growing film. Beyond 12 ML coverage we observed a network of trenches which decorate the earlier described V-shaped defects inside the film. Overgrowth of such defects is studied and a mechanism discussed.
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    Diffusion-induced decay of disclinations and solid state amorphization in mechanically alloyed materials (1992)
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    Applied physics 54 (1992), S. 517-519 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 62.20.Fe ; 64.70.−p
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    Notes: Abstract A theoretical model is proposed which treats the diffusion-induced decay of fragment boundary disclinations as being a micromechanism for the solid state amorphization in mechanically alloyed materials. Within the framework of the suggested model the kinetics of amorphous-phase nucleation centres (spread cores of the decayed disclinations) is studied. In doing so, kinetic equations are suggested and solved, which describe the evolution of the radius of the amorphous core of the decayed disclination.
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    Laser-induced defect formation in semiconductors (1992)
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    Applied physics 55 (1992), S. 161-166 
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    Keywords: 61.70 ; 81.40
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    Notes: Abstract The electron-deformation-thermal theory of pulsed laser-induced point defect generation in strongly absorbing semiconductors is developed. The theoretical results obtained are in a good agreement with the results of experiments carried out in Ge, GaAs, and GaP.
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    TEM characterization of yttrium silicide layers synthesized by ion implantation (1992)
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    Applied physics 54 (1992), S. 527-532 
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    ISSN: 1432-0630
    Keywords: 61.10 ; 61.70 ; 68.55
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    Notes: Abstract The structure of Si implanted with high doses of yttrium has been investigated by varying implantation doses and energies. As implantation doses increase into the low 1017 cm−2 range, silicide precipitates form. The precipitates are thin and long and lie parallel to {111} planes in the Si matrix. As dopant concentrations increase, the precipitates themselves become more equiaxed, aspect ratios decrease, and precipitates densities increase until the precipitates coalesce to form a continuous buried layer of yttrium silicide within the Si matrix. The layer thickness is relatively uneven. As implant doses increase to ∼ 4×1017 cm−2, the layer thicknesses become more uniform although there are still defects present. As the implant doses increase further, the precipitate bands on either side of the continuous layer decrease due to gettering of yttrium to the layer. As the energy of the implant is increased, the appearance of the sample is similar to that of the lower energy implants except that the layer is buried deeper in the Si matrix. Observations of the silicide are consistent with its having the AlB2 structure with ordered vacancies on the Si sublattice.
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    Dislocations on Ag(111) (1991)
    Springer
    Applied physics 52 (1991), S. 218-221 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.70Ph
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Various dislocations on Ag(111) were imaged with a scanning tunneling microscope, e.g. screw dislocations, Lomer-Cottrell locks and stacking fault tetrahedron. The distortion field near a screw dislocation was measured.
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    A study of sputter-induced defects in magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP (1991)
    Springer
    Applied physics 52 (1991), S. 60-64 
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    ISSN: 1432-0630
    Keywords: 73.30 ; 61.70 ; 81.15C
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Magnetron-sputtered CoSi2 and TiSi2 Schottky barriers on n- and p-type GaP were investigated. Their hitherto unknown barrier heights were determined to be 0.98 eV (for CoSi2/n-GaP and CoSi2/p-GaP), 0.91 eV (for TiSi2/n-GaP), and 0.90 eV (for TiSi2/p-GaP). It was found that magnetron-sputtering induced a compensated layer near the surface, both for n- and p-type GaP, with a thickness of about 0.05 μm. As the dependence of the shift of the Mott-Schottky intercept with the V-axis on the substrate dopant concentration obeyed some specific law, we proposed that the defects are neutral complexes of dopant ions and sputter-induced native defects. These native defects were assumed to depend on the Fermi level position, namely the PGa antisite and the VP vacancy for p-GaP and the VGa vacancy for n-GaP. The conversion between these defects occurs by nearest neighbour hopping of a phosphorus atom. The Schottky barrier heights obtained on p-GaP could be explained by Fermi level pinning at the surface due to the PGa defects. This could not be confirmed by n-GaP as the energy level position of the VGa was not available. The defects could be annealed out between 200° C and 300° C and the associated change of the Schottky barrier height corroborated the proposed model.
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    Properties of silicon-electrolyte junctions and their application to silicon characterization (1991)
    Springer
    Applied physics 53 (1991), S. 8-19 
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    ISSN: 1432-0630
    Keywords: 82.45 ; 61.70 ; 68.45
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A number of interesting and still not fully understood phenomena occur if silicon is used as an electrode in an electrochemical cell. Effects include porous silicon layer (PSL) formation with features on a nanometer scale, surface roughening on a micrometer scale, quantum efficiencies for light generated currents much larger than 1, preferential etching of defects, electropolishing, and voltage or current oscillations. It is shown that despite the complexities of chemical reactions involved, a basic understanding of the electrode behavior is possible from a semiconductor physics point of view and that it can be advantageous to use the silicon — electrolyte junction for analytical purposes. Topics such as defect characterization, measurements of minority carrier diffusion length, or surface recombination velocities can be addressed in unique ways by taking advantage of particular properties of the silicon — hydrofluoric acid system. Based on the general description of the Si — electrolyte junction given in this paper, strengths and limitations of some electrochemical methods are discussed in some detail and illustrated by examples.
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    Electrical activity of dislocations: Prospects for practical utilization (1991)
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    Applied physics 53 (1991), S. 189-193 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 81.40
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique (EBIC) in a scanning electron microscope. “Clean” misfit dislocations, i.e. no EBIC contrast, formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at 400° C to 1130° C from a back-side evaporated layer. Qualitative analysis of the electrical activity in relation to the energy levels anticipated for the clean or decorated dislocations is presented. Of particular interest is the case of defect-induced conductivity type inversion which occurred both at the top surface and at the buried dislocated interfaces of the multilayer. The prospects for using dislocations in a beneficial manner as active elements in electronic devices are discussed.
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    Ion scattering spectroscopy and scanning tunneling microscopy: A powerful combination for surface structure analysis (1991)
    Springer
    Applied physics 53 (1991), S. 388-402 
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    ISSN: 1432-0630
    Keywords: 68.35 ; 61.16 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Low-energy ion backscattering and scanning tunneling microscopy (STM) have been used in combination to get better insight into the field of surface crystallography. The synergic effectiveness resulting from the complementing character of the two methods has been exemplified at clean NiAl(111) and for oxygen and nitrogen adsorption on Cu(110). The position of the atom cores is accessible by the low-energy noble gas impact collision ion scattering spectroscopy with neutral detection (NICISS). As a technique averaging over a macroscopic area of the sample, NICISS is better suited to supply information on features of completely developed phases, either on clean or adsorbate saturated surfaces. Additional information, on the other hand, can be gained by scanning tunneling microscopy (STM), which as a powerful local probe may be used to image surfaces with atomic resolution and to monitor defects, steps and the growth kinetics of e.g. adsorption-induced phase changes.
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  • 50
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    Photoconductivity and light-induced absorption in KNbO3:Fe (1991)
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    Applied physics 53 (1991), S. 81-86 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 72.40 ; 78.20
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of photoconductivity and light-induced absorption in KNbO3: Fe are performed at different light intensities and crystal temperatures. The results are interpreted in terms of a two-center charge transport model. Different model parameters may be evaluated from the experimental data. A complete set of parameters is suggested explaining the dependences of photoconductivity and light-induced absorption on light intensity and temperature for the KNbO3: Fe crystal investigated.
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    Spectroscopic investigation of oxygen vacancies in solid oxide electrolytes (1990)
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    Applied physics 50 (1990), S. 545-549 
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    Keywords: 61.70 ; 66.30
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    Notes: Abstract The primary species in both solid-state conduction and heterogeneous electrocatalysis of solid oxide electrolytes is the anion vacancy. The nature and effect of the local environment on anion vacancies in 10 m/o yttria stabilized zirconia (YSZ) and 20 m/o erbia stabilized bismuth oxide (ESB) was studied using uv-visible absorption and fluorescence spectroscopy. Partial reduction of YSZ and ordering of the oxygen sublattice in ESB is discussed. The species common to both of these phenomena, anion vacancies, was found to be luminescent and the absorption and fluorescence spectra attributable to F-center type defects is described.
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    The electrical properties of zinc in silicon (1990)
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    Applied physics 50 (1990), S. 151-156 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 17.55
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    Notes: Abstract Electrically active deep levels related to zinc in silicon are investigated in n- and p-type silicon using Deep-Level Transient Fourier Spectroscopy (DLTFS) measurements. While in n-type silicon a level at E C−0.49 eV is observed, the main zinc-related levels in p-type silicon are determined to be E V+0.27 eV and E V+0.60 eV. The latter are associated with zinc situated on regular silicon lattice sites. The emission rate of these centers exhibits a field dependence which cannot be quantitatively explained with the Poole-Frenkel model. On the other hand, a shallow level at E V+0.09 eV is observed only in boron-doped silicon which may be related to a zinc-boron complex. Other zinc-related levels are found at E V+0.23 eV and E V+0.33 eV, their concentration depending on that of zinc on substitutional sites. In addition, the evaluation of depth profiles and the analysis of the field dependence of the emission rate based on the DLTFS method is presented.
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    Residual non-idealities in the almost ideal silicon p-n junction (1990)
    Springer
    Applied physics 50 (1990), S. 273-286 
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    Keywords: 85.30 ; 72.20 ; 73.40 ; 61.70
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    Notes: Abstract The reproducible, mass production of almost ideal silicon p-n junctions has allowed two new phenomena to be discovered: a pure generation without recombination, and a slow capacitance-free current transient. Our present knowledge of these phenomena is reviewed and speculations about the centres responsible for them are discussed; these centres seem to be connected to ultimate, unavoidable properties of the silicon p-n junction rather than to unwanted impurities.
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    Conductivity and light-induced absorption in BaTiO3 (1990)
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    Applied physics 51 (1990), S. 13-17 
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    Keywords: 61.70 ; 72.40 ; 78.20
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    Notes: Abstract A charge transport model including deep and shallow traps explains both the nonlinear relation between photoconductivity and light intensity and the light-induced absorption in BaTiO3. A correlation between measurements of photoconductivity and light-induced absorption as a function of temperature yields parameters for the shallow center, among them thermal activation energy and generation rate.
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    Light scattering topography and photoluminescence topography (1990)
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    Applied physics 50 (1990), S. 531-540 
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    Keywords: 61.70 ; 78.55 ; 78.65
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    Notes: Abstract Two attractive methods for materials characterization are applied and discussed: (a) light scattering topography for fast and nondestructive testing of structural perfection, and (b) photoluminescence topography for evaluating the light emission characteristics of photoluminescent materials. Among the examples presented are semiconductor substrates and films of silicon, silicon-on-insulators of different kind, and III–V materials.
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    The determination of dislocation density depth profiles in surface layers from broadening of X-ray diffraction profiles (1990)
    Springer
    Applied physics 50 (1990), S. 107-109 
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    Keywords: 61.70
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    Notes: Abstract A method is proposed for the determination of dislocation density depth profiles in the thin surface layers comparable to the penetration depth of X-rays, with no need to remove the surface layers by chemical or electrolytic polishing. The dislocation density depth profile is modelled mathematically and the parameters determining the profile can be evaluated from the Fourier transform of the X-ray diffracted profiles with various wavelengths of radiation.
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    Gold diffusion in silicon by Rapid Optical Annealing (1990)
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    Applied physics 50 (1990), S. 197-205 
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    Keywords: 61.70 ; 66.30
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    Notes: Abstract Gold diffusion in silicon is investigated using Rapid Optical Annealing at temperatures in the range of 800°C to 1200°C and annealing times from 300 s down to 1 s. The resulting content of substitutional gold is determined by spreading resistance measurements and analyzed by comparison with extensive numerical simulations. The profiles obtained show a broader spectrum as compared to the U-shapes after long time diffusion. The cooling process affects the profiles significantly, since they depend on the wafer thickness. An unexpected penetration depth was found after 1200°C diffusion in thick wafers, which are subject to small cooling rates. This phenomenon is due to a special combination of reverse kick-out, deep diffusion of highly supersaturated interstitial gold, and again an incorporation in lattice sites, termed the RDI effect. Numerical calculations allow us to reproduce the experimentally observed profiles only if a sensitive balance between the different temperature dependencies is obeyed. These investigations, therefore, yield new information about the equilibrium concentration and diffusion of silicon interstitials. A best set of parameters is presented. The time constant of the kick-out process is quantified for the first time.
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    A positron lifetime study in quenched Pb(Ag) alloys (1990)
    Springer
    Applied physics 51 (1990), S. 141-145 
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    Keywords: 78.70 Bj ; 61.70
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    Notes: Abstract Positron lifetime measurements have been made in quenched or irradiated pure Pb and in quenched Pb(Ag) alloys. From positron investigation of annealing behaviour, the precipitation of silver atoms in dilute alloys should be understood in terms of (Ag-Pb) interstitially migrating pairs. The presence of di-interstitials (Ag-Ag) or complexes [Ag(S)-V] as mobile defects responsible for the Ag transport process in concentrated alloys is discussed.
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    A copper- and boron-related defect in silicon (1990)
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    Applied physics 50 (1990), S. 241-247 
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    Keywords: 61.70 ; 78.30
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    Notes: Abstract The resistivity of boron-doped silicon can be significantly increased by polishing such material with an appropriate amine- and copper-containing slurry. This effect is ascribed to a passivation of the boron acceptors by a defect produced or introduced by the polishing process. Three new, so far unknown localized vibrational modes at 691, 720, and 1038 cm−1 are observed in highly boron-doped silicon samples after such a polishing treatment. Two of these localized modes can be identified as due to a boron-containing defect. High concentrations of copper found in the samples after appropriate polishing indicate a participation — either directly or indirectly — of this metal in the passivation process.
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    Introduction to defect bistability (1989)
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    Applied physics 48 (1989), S. 3-9 
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    Keywords: 61.70 ; 71
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    Notes: Abstract Molecule-like defects in crystalline semiconductors can display bistable properties when two different structural arrangements are possible for constant charge on the defects. This introductory paper will review the physical and technical aspects of this new field of research. It also includes a detailed presentation of our experimental studies on the recently discovered bistable thermal donor defect in silicon.
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    Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon (1989)
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    Applied physics 48 (1989), S. 41-47 
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    Keywords: 61.70 ; 78.30 ; 72.40
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    Notes: Abstract Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.
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    Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon? (1989)
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    Applied physics 48 (1989), S. 219-228 
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    Keywords: 61.70 ; 66.30 ; 85.30
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    Notes: Abstract In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of oxygen-related thermal donors in the temperature range around 450°C also requires a fast diffusing species. The paper examines the possibility of this fast diffusing species beingmolecular oxygen, as had been suggested earlier. Special emphasis will be placed on experimental results which have become available since that time. These results allow one to relate thermal donor formation to the loss of interstitial oxygen and to oxygen precipitation. The role of carbon is also considered in this context.
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    Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation (1989)
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    Applied physics 48 (1989), S. 255-260 
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    Keywords: 61.70 ; 61.80
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    Notes: Abstract Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during annealing have been determined by double crystal x-ray diffraction and correlated to anomalous P diffusivity. A qualitative distribution of the interstitial excess in solution in the silicon lattice during annealing is proposed for the two different cases. These point defects, released by the dissolution of the interstitial clusters produced by the implanted ions, have been identified as responsible for the observed enhanced P diffusion.
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    A novel technique for measuring resistance fluctuations independently of background noise (1989)
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    Applied physics 48 (1989), S. 233-236 
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    Keywords: 06 ; 07 ; 61.70
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    Notes: Abstract A novel method is presented for measuring the spectral density of resistance fluctuations without the explicit determination of the voltage background noise (Johnson noise, pre-amplifier noise). The output of a standard ac bridge excited by a single-frequency alternating current is demodulated by two phase-sensitive detectors which operate in quadrature. When the phase difference between excitation and detection is properly set, the real part of the cross-spectral density of the two demodulators shows only the spectral density of the resistance fluctuations and not the disturbing background noise. The feasibility of our new method is demonstrated by measurements of 1/f noise of a thin-film A1 sample.
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    Temperature characteristics of positron trapping at defects in electron-irradiated silicon (1989)
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    Applied physics 49 (1989), S. 659-664 
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    Keywords: 61.70 ; 61.80 ; 78.70
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    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
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    The electrical activity of stacking faults in Czochralski silicon (1989)
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    Applied physics 48 (1989), S. 431-436 
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    Keywords: 72.20J ; 61.70
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    Notes: Abstract A spectroscopic analysis by the light-beam-induced-current technique has been carried out to study the electrical properties of stacking faults in Czochralski silicon subjected to internal gettering treatments. By changing the wavelength of the light beam probing the sample, we have obtained the depth profiling of the stacking fault electrical activity. Occurrence of minority carrier recombination and generation processes at some stacking faults, corresponding, respectively, to dark and bright levels in a grey-shade imaging, has been observed. The presence of fixed charges at the defect-silicon matrix interface is hypothesized as a possible cause of the observed images.
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    Correlations between clusterization and electrical properties within fluorite-type anions excess solid solutions: Setting of a model (1989)
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    Applied physics 49 (1989), S. 3-12 
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    Keywords: 66.30 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We proposed a model to correlate, in a continuous manner, the composition dependence of electrical properties and the progressive extension of clusterization when the substitution rate increases in a fluoride anion excess CaF2-type solid solution of M1−xM x ′2+α F2+αx(α=1,2,3). A new classification of clusters is given based on the presence or absence of coexistence between two types of interstitial fluoride ions. The second part of the paper is devoted to the representation of the sum of interstitial fluoride ionsn F int and the sum of vacancies in normal sitesn □ according to the general equationy=(mx 3+λqx)/(x 2+q). This model allows us to correlate the structural and electrical properties of a large number of solid solutions with fluorite-type structure.
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    Structural, electrical and catalytic properties of ion-implanted oxides (1989)
    Springer
    Applied physics 49 (1989), S. 33-40 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 81.40 ; 81.60 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The potential application of ion implantation to modify the surfaces of ceramic materials is discussed. Changes in the chemical composition and microstructure result in important variations of the electrical and catalytic properties of oxides.
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    URL: http://dx.doi.org/10.1007/BF00615462
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    Physical properties and applications of Cd1−xPbxF2 superionic crystals (1989)
    Springer
    Applied physics 49 (1989), S. 413-424 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 85.80 ; 65.50
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We review investigations of Cd1−xPbxF2 superionic properties and show examples of applications of these crystals. Results of a study of thermodynamic, electrical and Raman-scattering properties of Cd1−xPbxF2 crystals are presented. These crystals can be used to construct reversible electrochemical cells.
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    URL: http://dx.doi.org/10.1007/BF00615026
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    Electrochemical and structural characteristics of tungstic acids as cathode materials for lithium batteries (1989)
    Springer
    Applied physics 49 (1989), S. 83-89 
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    ISSN: 1432-0630
    Keywords: 72.60 ; 85.80 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrochemical characteristics and structural changes associated with discharge and charge of several tungstic acids such as H2WO4 and H2WO4 · H2O have been investigated. The suitability of these substances as new cathode materials for nonaqueous lithium batteries has been assessed. H2WO4, having only coordinated water molecules, showed a discharge capacity of about 410 Ah kg−1 of acid weight and a discharge potential around 2 V vs. Li/Li+. This capacity was much higher than the 40 ∼ 180 Ah kg−1 of anhydrous WO3. H2WO4 showed a good charge-discharge cycling behavior at a capacity below 1e −/W. However, the formation of a stable phase such as Li2WO4 during the cyclings limited the cycling number. In addition, the crystal structure of H2WO4 changed from orthorhombic to tetragonal during discharge, but the original layered lattice was kept on discharge to 1.5e −/W. On the other hand, a significant decrease in the layer spacing of H2WO4 · H2O took place with discharge, due to the direct interaction between the interlayer water molecule and the lithium inserted between the layers. In this paper, in particular, the effect of the coordinated and hydrated water molecules in the acid structure on the electrochemical behavior is discussed.
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    Electrical properties of novel mixed-conducting oxides (1989)
    Springer
    Applied physics 49 (1989), S. 25-31 
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    ISSN: 1432-0630
    Keywords: 81.20 ; 66.30 ; 72.60 ; 61.70
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Zirconia-titania-yttria oxide solutions are novel mixed-electrical conductors in which both oxygen-ions and electrons are mobile. A determination of their electrical properties is necessary for an evaluation of their potential applications. Single-phase oxide solutions have been prepared and characterized. Phase studies indicates extensive solid solution of titania into zirconia stabilized with 12 mol % yttria. The observed decrease in lattice parameter with increasing titania concentration in these oxide solutions indicates that titanium cations substitute for the zirconium cations in the fluorite lattice. The lattice and grain-boundary electrical conductivities have been determined using impedance spectroscopy at temperatures between 400 and 950 °C.
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    Dielectric relaxation and computer simulation studies of rutile-structured MnF2 crystals (1989)
    Springer
    Applied physics 49 (1989), S. 69-73 
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    ISSN: 1432-0630
    Keywords: 77.40 ; 61.70 ; 66.30
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fluorides of the rutile structure are relatively simple ionic materials with tetragonal symmetry for which the dominant intrinsic defect has not been established. The present experiments involve low-temperature dielectric relaxation measurements on Er3+-and Y3+-doped MnF2 single crystals. Unexpectedly, dielectric loss peaks were observed at cryogenic temperatures, involving very low activation energies,E. For both dopants a prominent peak is observed for samples oriented parallel to thec-axis withE ∼ 6 meV and in perpendicular orientations withE=37 meV for Er3+ and 46 meV for Y3+ doping. Such lowE-values are probably too small to be controlled by lattice migration of a defect. Rather, we expect that they are due to a very low symmetry configuration created when the ions near the defect move “off symmetry” to a more stable configuration. Computer simulation calculations have been carried out which are much improved over early studies of this system in terms of the code used and the F-F interatomic potentials. The results show that the energy per defect for the anion Frenkel (1.53 eV) is lower than that of the Schottky (1.99 eV). It was also shown that the fluorine interstitial, Fi, adopts a split-interstitial form. This defect associates strongly with trivalent dopants Er and Y to produce a low symmetry dipolar structure with the necessary off-symmetry configuration to explain the experimental findings. Since there is no alternative way to explain these low temperature relaxations in terms of impurities associated with Mn vacancies, as would be required by the Schottky model, we conclude that these experiments serve to establish the nature of the intrinsic defect in MnF2 as anion Frenkel.
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    Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealing (1989)
    Springer
    Applied physics 49 (1989), S. 149-155 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behavior of secondary defects generated in 2 MeV B- and P-, and 1 MeV As-implanted (100) Si with a dose of 5×1014 ions/cm2 has been investigated after rapid thermal annealing (RTA) treatment using cross-sectional TEM observations. The results are compared with ones obtained by furnace annealing (FA) treatment. RTA is more effective than FA for the defect density reduction of deep defects existing beyond 2 μm depths from the surface in B- and P-implanted layers. However, when a dislocation loop diameter is close to the substrate surface, as in the case of As implantation, the loops climb up to the surface by 1250 °C RTA. Moreover, repeated RTA is effective for the suppression of secondary defect growth in B- and P-implanted layers, while there is no difference in defect density or configuration for As implantation between repeated and simple RTA.
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    A macro-resonance-cell description for high-T c oxide superconductors (1989)
    Springer
    Applied physics 49 (1989), S. 171-179 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 61.70 ; 63
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    Notes: Abstract A phenomenological macro-resonance-cell description of bonding in high-T c oxide superconductors based on some common structural features is proposed. In this description, the oxidation states of the cations on the lattice frame are assumed to be oscillating. The oxygen atoms are described as being in a “breathing mode” and coupling is assumed to exist between the CuO2 layers and the boundary (capping) layers in these quasi two-dimensional systems. The variation ofT c for different materials is attributed in part to the relative effectiveness of the coupling between different kinds of boundary layer(s). Peierl's deformation or Jahn-Teller effect assisted by lattice softening and possibly magnetic ordering is discussed in relation to high-T c superconductivity in these oxides.
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    A Systematic investigation of the dc electrical conductivity of rare-earth doped ceria (1989)
    Springer
    Applied physics 49 (1989), S. 225-232 
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    ISSN: 1432-0630
    Keywords: 66.30 ; 61.70 ; 82.45
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    Notes: Abstract The dc electrical conductivity of rare-earth doped ceria has been measured as a function of temperature (300–600 K) and composition (0.05–15 mol% M2O3) on using the complex impedance technique. Five dopants have been selected, yttrium and the lanthanides Yb, Gd, Nd, and La. For all of them, the variations of the activation energy versus dopant concentration are similar and characterized by the existence of a minimum. This peculiar property can be understood if attractive interactions between immobile dopant ions and mobile oxygen vacancies are taken into account. From an analysis of the experimental results, it is concluded that this interaction extends at least to third or fourth nearest neighbors depending on the size and the electronic configuration of the dopant ion.
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    Electron microscope studies of the regular twinning structure and the grain boundary structure in a system of cobalt particles (1989)
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    The European physical journal 12 (1989), S. 123-125 
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    ISSN: 1434-6079
    Keywords: 61.70 ; 68.00
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    Topics: Physics
    Notes: Abstract Martensitic transformation in small gas evaporated cobalt particles (〈100 nm) has earlier been discussed using conventional electron microscopy. The results can shortly be described as an extremely regular banded twinning structure within the particles. In this paper it will be presented new results on the same transformation and also on the particle formation and interaction but now using high resolution electron microscope methods.
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    Structure of an icosahedral palladium particle (1989)
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    The European physical journal 12 (1989), S. 113-114 
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    ISSN: 1434-6079
    Keywords: 61.70 ; 68.55
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    Topics: Physics
    Notes: Abstract Small icosahedral palladium particles have been studied using high resolution electron microscopy. In these small particles (d⩽15 nm) no dislocations have been found so that internal strains are necessary to maintain their coherency. The structural deformations induced by these strains have been investigated and compared to existing models.
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    Nitrogen-oxygen complexes in Czochralski-silicon (1988)
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    Applied physics 46 (1988), S. 73-76 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 78.30
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    Notes: Abstract Infrared spectra of nitrogen doped Czochralski-grown silicon indicate absorption lines in addition to the well-known lines of local modes of oxygen, carbon and nitrogen centers. The most prominent lines of them can be shown to be correlated with certain oxygen and nitrogen concentrations. These lines are, therefore, thought to arise from N-O complexes and are discussed in the context of an O-induced disturbance of N2-pair vibrations. The results of preliminary investigations on the stability of such complexes are also reported.
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    Thermoelectric power of YBa2Cu3Ox in equilibrium with gas phases (1988)
    Springer
    Applied physics 47 (1988), S. 205-208 
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    ISSN: 1432-0630
    Keywords: 74.70 ; 72.20 ; 61.70
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    Notes: Abstract Thermoelectric power (TP) and electrical conductivity (EC) measurements were performed for YEa2Cu3Ox at 1128 K under controlled oxygen partial pressure varying between 50 and 105 Pa. Three regimes are observed for the electrical properties. At low $$p_{{\text{O}}_{\text{2}} } (〈 1.6{\text{ }} \times {\text{ 10}}^{\text{2}} {\text{ }}{\text{Pa}})$$ both TP and EC remain constant with $$p_{{\text{O}}_{\text{2}} } $$ . In the medium range $$(1.6{\text{ }} \times {\text{ 10}}^{\text{2}}〈 p_{{\text{O}}_{\text{2}} }〈 7.6{\text{ }} \times {\text{ 10}}^{\text{3}} {\text{ Pa)}}$$ sharp changes of both electrical parameters occur; TP changes sign from positive above 4×102 Pa to negative below this $$p_{{\text{O}}_{\text{2}} } $$ value. In the high $$p_{{\text{O}}_{\text{2}} } $$ region (〉7.6×103 Pa) TP vs log $$p_{{\text{O}}_{\text{2}} } $$ exhibits two slopes; 5.1 below 1.5×104 Pa and 8.4 above this $$p_{{\text{O}}_{\text{2}} } $$ value. The slopes can be discussed in terms of the defect structure involving singly and doubly ionized oxygen vacancies below and above 7.6×103 Pa, respectively.
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    The structure and defect structure of high-T c superconducting materials in the system Tl-Ba-Ca-Cu-O (1988)
    Springer
    Applied physics 46 (1988), S. 233-239 
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    ISSN: 1432-0630
    Keywords: 74 ; 61.14 ; 61.70
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    Notes: Abstract Electron diffraction and high resolution electron microscopy have been applied to study Tl2Ba2CaCu2O8 and Tl2Ba2Ca2Cu3O10. The structures only differ in the thickness of the perovskite lamellae and have tetragonal basic unit cells witha=0.385,c=2.93 nm anda=0.385,c=3.58 nm, respectively. A modulation with wave vectors in (100)* and (010)* planes occurs in both compounds. This modulation of which the intensity is somewhat sample dependent is much weaker than in the Bi compounds and disappears irreversibly upon heating of the specimen. Intergrowth of lamellae of different phases does occur, although not as frequently as in the Bi compounds.
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    A high-intensity58Co slow-positron beam and applications to probe near-surface disorder (1987)
    Springer
    Applied physics 43 (1987), S. 269-274 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 07.77
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties and performance of a magnetically-guided, high-intensity, ultra-high-vacuum slow-positron beam are reviewed. Basic positron behaviour in solids is briefly described. Results from various58Coβ + sources in conjunction with a backscattering W(110) moderator are presented. We discuss research applications to probe depth distribution of open-volume lattice defects. Two experimental methods capable of yielding information on defects within ∼500 Å and ∼1 μm from the surface, respectively, are considered. Results are shown on defect distribution in ion implanted metals and semiconductors.
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    Ion-beam mixing of multilayered targets ballistic effects (1987)
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    Applied physics 42 (1987), S. 193-196 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30
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    Notes: Abstract In this work a Monte-Carlo method of dynamical type is used to simulate the ion-beam mixing of a composite, multilayered target. The calculation refers to a Ni-Ta structure, on a silicon substrate, bombarded with As+ ions and elucidates the effect of the dose and of the target structure on the intermixing of the target constituents.
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    Photopyroelectric spectroscopy (P2ES) of electronic defect centers in crystalline n-CdS (1987)
    Springer
    Applied physics 44 (1987), S. 123-130 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 61.70
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    Notes: Abstract Photopyroelectric spectroscopy (P2ES) of n-CdS single crystals was performed at an open circuit, and in conjunction with photocurrent spectroscopy (PCS) in the presence of an applied ac or dc transverse field. The results showed that P2ES is very sensitive to the presence of deliberately introduced subbandgap defect structures, with the P2E signal dominated by non-radiative de-excitation mechanisms at defect centers. The potential of this technique as a powerful electronic defect diagnostic tool, combined with the overall experimental simplicity, was demonstrated with mm-thick crystals used as received in an open-cell geometry.
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    EL2 deep level in sub-bandgap surface photovoltage spectra in GaAs bulk crystals (1987)
    Springer
    Applied physics 43 (1987), S. 117-121 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 73.40
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    Notes: Abstract Experimentally observed surface-photovoltage-method (SPV) spectra in the subbandgap energy range are presented for a real (100)GaAs surface, treated with preepitaxial procedures. Conductive, n-type GaAs and semi-insulating GaAs are studied. It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, and the photoionization cross-section for both Cr and EL2 levels is qualitatively determined.
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    The positron beam at the stuttgart pelletron accelerator and its applications toβ +γ positron lifetime measurements (1987)
    Springer
    Applied physics 43 (1987), S. 261-267 
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    ISSN: 1432-0630
    Keywords: 78.70 ; 61.70 ; 07.77
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    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A slow-positron source has been installed in the therminal of an electrostatic 6.5 MeV accelerator and provides a monoenergetic positron beam in the few-MeV range. It will be used to operate a “fast” positron lifetime spectrometer based onβ + γ coincidences. The properties of the beam, the expected performance of the spectrometer, its advantages over conventionalγγ lifetime measurements, a number of intended applications, as well as recent positron-electron scattering experiments and plans for positron channelling and channelling-radiation studies are outlined.
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    Diffusion of gold in dislocation-free or highly dislocated silicon measured by the spreading-resistance technique (1986)
    Springer
    Applied physics 39 (1986), S. 37-48 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
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    Notes: Abstract The diffusion of Au in dislocation-free or plastically deformed Si (1011 to 1013 dislocations/m2) was measured with the aid of the spreading-resistance technique. The Au profiles produced indislocation-free Si slices by in-diffusion from both surfaces possess nonerfc-type U shapes as predicted by the so-called kick-out diffusion model. This model is used to calculate the contribution of self-interstitials to the (uncorrelated) Si self-diffusion coefficient,D I SD =0.064×exp(−4.80 eV/kT)m2 s−1, from the present and previous data on the diffusivity and solubility of Au in Si in the temperature range 1073–1473 K. Inhighly dislocated Si the diffusion of Au is considerably faster than in dislocation-free Si. From the erfc-type penetration profiles found in this case, effective Au diffusion coefficients were deduced and combined with data on the solubility of Au in Si. ThusC i eq D i=0.0064 ×exp(−3.93 eV/kT)m2 s−1 was obtained in the temperature range 1180–1427 K, whereC i eq andD i are the solubility and diffusivity of interstitial Au in Si.
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    Dislocations in high-purity germanium and its relation to γ-ray detector performance (1986)
    Springer
    Applied physics 40 (1986), S. 257-261 
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    ISSN: 1432-0630
    Keywords: 29 ; 61.70
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    Notes: Abstract The presence of dislocations in high-purity germanium influences the resolution of radiation detectors made from it. The four dislocation types found with electron microscopy are studied by DLTS to understand their influence on trapping in a γ-ray detector. Only three DLTS bands were found in commercially produced material. Statistical correlation with the detector resolution reported by various detector manufacturers finally yielded useful specifications with respect to the crystallographic perfection to be met in detector grade HP-Ge. The specification limits are discussed in view of the DLTS data.
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    Surface space-charge layer analysis in semi-insulating GaAs containing deep levels in bulk (1986)
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    Applied physics 40 (1986), S. 219-225 
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    Keywords: 61.70 ; 73.40
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    Notes: Abstract A computer simulation study of space-charge layers at the surface of semiinsulating GaAs containing deep EL2 and Cr centers in bulk is presented. Substantial influence of the deep bulk levels on the main characteristics of the surface space charge layers, is demonstrated. The special features of these characteristics and the conditions of their arising are discussed.
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    Iron contamination in ion implanted silicon, as revealed by x-ray and electron diffraction (1986)
    Springer
    Applied physics 39 (1986), S. 191-195 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
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    Notes: Abstract A surface contamination effect was detected by double-crystal x-ray diffraction analysis of silicon wafers implanted with silicon ions at different doses and energies after annealing at 700 °C. The hypothesis of recoiled oxygen from the native oxide, as the impurity responsible for surface strain, was excluded by x-ray characterization of a series of samples implanted through thermally grown silicon oxides. The surface positions of the strain, resulting from x-ray analysis after 700 °C annealing and the analysis of the electron diffraction patterns, taken on particles originated from precipitation of the impurity by 1000 °C heating, allowed to conclude that the contamination phenomenon is due to iron atoms coming from the ion implanter.
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    Focused ion beam gallium implantation into silicon (1986)
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    Applied physics 39 (1986), S. 183-190 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties and lattice disorders of 50 keV, focused ion beam (FIB) gallium-implanted silicon layers have been investigated as a function of beam scan speed and ion dose. The critical dose for continuous amorphous layer formation is 8 ∼ 10 × 1013 ions/cm2, when the beam scan speed is lowered to about 10−2 cm/s. This is about 1/3 that of conventional ion implantation. The increase in secondary defect formation after annealing is also observed as the beam scan speed decreases under implantation conditions close to the critical dose. However, the effect of high dose rate on the electrical activation of gallium atoms and critical dose reduction is not as significant as with FIB implantation by a lighter ion mass, such as boron. The results are compared with those obtained by conventional ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620733
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  • 91
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    X-ray studies of dislocations in multi-layer Cu films (1986)
    Springer
    Applied physics 39 (1986), S. 65-66 
    Details
    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Vacuum-prepared multi-layer Cu films have been studied by x-ray diffraction to detect the averaged dislocation density and distribution. There are very few stacking faults and a very small degree of texture in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177165
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  • 92
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    HREM investigation of twinning in very high dose phosphorus ion-implanted silicon (1986)
    Springer
    Applied physics 39 (1986), S. 83-90 
    Details
    ISSN: 1432-0630
    Keywords: 61.50 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Results are discussed of a study by means of high-resolution electron microscopy (HREM), electron diffraction, optical diffraction and image simulation of twinning in very high dose phosphorus ion-implanted (011) silicon wafers. Except for twins on the (111) planes (i. e.,Σ3 boundaries) andΣ9 boundaries, also regions showing, in the high-resolution image, a threefold periodicity are frequently observed. It is demonstrated that the diffraction pattern and the image of such regions can be explained by the overlap of twinned grains. Interpretation by the presence of polytypes of silicon is excluded. The possibility to image twins on inclined (111) planes is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616823
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  • 93
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    Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistors (1986)
    Springer
    Applied physics 40 (1986), S. 101-107 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 8
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Phosphorus has a considerably less steep concentration profile than arsenic. Therefore phosphorus is considered as an alternative dopand for soft drain concepts in future MOS devices. In-diffusion of phosphorus starting from a high surface concentration generatesexcess point defects which diffuse into the depth of the crystal and lead to a tail in the phosphorus concentration profile by considerably enhancing the phosphorus diffusion in this region. It is also well known that the interface between silicon and a non growing oxide acts as a sink for excess point defects. Since source/drain areas of MOS transistors are surrounded by gate and isolation oxides, the question arises how the resulting excess point defect distribution may influence the lateral and vertical diffusion profile of phosphorus and hence the channel length and the junction depth of the source/drain region in a MOS device. We extended the one-dimensional Fair-Tsai model of phosphorus diffusion into two dimensions and incorporated that the interface between silicon and a gate oxide acts as a sink for excess point defects and modifies their distribution. The appropriate code was implemented in the two-dimensional process simulation program LADIS. Based on this extended model two-dimensional simulations of phosphorus drains have been performed and compared to experimental results and to results from other numerical models. It turns out that the presence of the gate oxide reduces the tail in the phosphorus concentration profile, considerably in lateral direction and less pronounced in vertical direction. Limitations of the model will be discussed in detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616485
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  • 94
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    Vacancy formation energy related to liquid structure in a nonlinear scaled potential theory (1986)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 7 (1986), S. 734-738 
    Details
    ISSN: 0392-6737
    Keywords: 61.70 ; defects in crystals
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Il lavoro deriva una relazione di scala per l’energiaE v di formazione di un posto vacante in una famiglia di sistemi omologhi alla loro temperatureT m di fusione, nell’ambito di una teoria a potenziale di coppia che legaE v aT m alla struttura della fase liquida nell’ipotesi che rilassamenti atomici attorno al posto vacante possano essere trascurati.
    Notes: Summary A scaling relation is derived for the vacancy formation energyE v in a family of homologous systems at their melting temperatureT m, using a pair potential theory which relatesE v atT m to liquid structure under the assumption that atomic relaxation round the vacancy can be neglected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02450439
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  • 95
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    Electron density and atomic relaxation around a vacancy in a small metal particle (1986)
    Springer
    The European physical journal 2 (1986), S. 177-181 
    Details
    ISSN: 1434-6079
    Keywords: 31.20 ; 36.40 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electron density in an ideal vacancy placed at the center of a small Aluminium microparticle has been studied as a function of the number of atoms in the microparticle. In these circumstances one can conclude that the perturbation of the density is localized in the close neighborhood of the vacancy and is nearly independent of the particle size. Then relaxation of the nearest neighbours of the vacancy was allowed. This relaxation was found to be small, but its sign depends on particle size. For particles larger than ∼100 atoms the relaxation is towards the vacancy, as for a vacancy in bulk Aluminium. But for smaller particles, the relaxation is away from the vacancy. This relaxation suggests a nontrivial size dependence of the energy of vacancy formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01429071
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  • 96
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    Double anion antisite in GaAs - the simplest member of EL2 family? (1985)
    Springer
    Applied physics 38 (1985), S. 253-261 
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    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Properties of an aggregate composed of two nearest-neighbour AsGa defects are examined. Such an aggregate behaves like a dimer in which the two constituents are weakly coupled giving rise to a double near-degeneracy of electronic states of the system. The system is unstable against the Jahn-Teller (J-T) distortion that couples pairs of nearly degenerate states. Usually the distortion is stabilized by localization of a single electron, or a pair of electrons, at one of the two AsGa defects. If one of the two electrons is excited into theT 2 resonant state of individual AsGa then the vibronic coupling can be strong, and the resulting J-T effect can give rise to a metastable behaviour of the system. It is argued that the (AsGa)2 aggregate is the best candidate for EL2 centre in GaAs crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616060
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  • 97
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    Experimental and theoretical investigations into the origin of cross-contamination effects observed in a quadrupole-based SIMS instrument (1985)
    Springer
    Applied physics 38 (1985), S. 235-252 
    Details
    ISSN: 1432-0630
    Keywords: 07.75 ; 61.70 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The minimum-detection limits achievable in SIMS analyses are often determined by transport of material from surrounding surfaces to the bombarded sample. This cross-contamination (or memory) effect was studied in great detail, both experimentally and theoretically. The measurements were performed using a quadrupole-based ion microprobe operated at a secondary-ion extraction voltage of less than 200 V (primary ions mostly 8keV O 2 + ). It was found that the flux of particles liberated from surrounding surfaces consists of neutrals as well as positive and negative ions. Contaminant species condensing on the bombarded sample could be discriminated from other backsputtered species through differences in their apparent energy spectra and by other means. The apparent concentration due to material deposited on the sample surface was directly proportional to the bombarded area. For an area of 1 mm2 the maximum apparent concentration of Si in GaAs amounted to ∼5 × 1016atoms/cm3. The rate of contamination decreased strongly with increasing spacing between the bombarded sample and the collector. The intensities of backsputtered ions and neutrals increased strongly with increasing mass of the target atoms (factor of 10 to 50 due to a change from carbon to gold). The effect of the primary ion mass (O 2 + , Ne+, and Xe+) and energy (5–10keV) was comparatively small. During prolonged bombardment of one particular target material, the rate of contamination due to species not contained in the sample decreased exponentially with increasing fluence. In order to explain the experimental results a model is presented in which the backsputtering effect is attributed to bombardment of surrounding walls by high-energy particles reflected or sputtered from the analysed sample. The level of sample contamination is described by a formula which contains only measurable quantities. Cross-contamination efficiencies are worked out in detail using calculated energy spectra of sputtered and reflected particles in combination with the energy dependence of the sputtering yield of the assumed wall material. The experimental findings are shown to be good agreement with the essential predictions of the model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616059
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  • 98
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    Tunneling from dislocation cores in silicon Schottky diodes (1985)
    Springer
    Applied physics 36 (1985), S. 55-61 
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    ISSN: 1432-0630
    Keywords: 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Selfquenching of the photocapacitance and of the reverse photocurrent in Schottky diodes made on dislocatedn-type silicon was discovered. A phenomenological model explaining this, rather unexpected, phenomenon is proposed. The model requires an introduction of a new mechanism of diode conductance via dislocation lines. Crucial for this mechanism is the possibility of electron tunneling from dislocation to the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616462
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  • 99
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    Point defects, diffusion processes, and swirl defect formation in silicon (1985)
    Springer
    Applied physics 37 (1985), S. 1-17 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 66.30 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617863
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  • 100
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    Evidence for two energy levels associated with EL2 trap in GaAs (1985)
    Springer
    Applied physics 36 (1985), S. 213-216 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 71.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract By photocapacitance technique, applied to n-type LEC-grown GaAs, two energy levels:E v +0.45 eV andE c −0.75 eV are identified, for the first time, as being associated with the EL2 trap. As follows from the analysis of photo-EPR results on highly resistive GaAs crystals, the same energy levels can be attributed to the arsenic antisite defect, AsGA. In view of these findings, it is argued that the occupied EL2 level corresponds to the neutral charge state of AsGa defect.
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    URL: http://dx.doi.org/10.1007/BF00616555
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